STS4DPF20L DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET TYPE STS4DPF20L ■ ■ ■ VDSS RDS(on) ID 20 V <0.08 Ω 4A TYPICAL RDS(on) = 0.07 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN CELLULAR PHONES SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM(•) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) . Unit 20 V 20 V Gate- source Voltage ± 16 V Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation 4 2.5 A A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation 1.6 2 W W (•) Pulse width limited by safe operating area. February 2002 Value Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STS4DPF20L THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Single Operation Dual Operating 62.5 78 -55 to150 -55 to 150 Thermal Operating Junction-ambient Storage Temperature °C/W °C/W °C °C (*) When Mounted on 0.5 in2 pad of 2 oz.copper ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 250 µA Min. Typ. Max. Unit 1 1.6 2.5 V 0.070 0.085 0.08 0.10 Ω Ω Typ. Max. Unit ID = 2 A ID = 2 A DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS= 15V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 2 A Min. 10 S 1350 490 130 pF pF pF STS4DPF20L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time ID = 2 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24V ID= 4A VGS=5V Min. Typ. Max. 25 35 (See test circuit, Figure 2) Unit ns ns 12.5 5 3 16 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 2 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 125 35 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 4 A VDD = 15 V Tj = 150°C (See test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 45 36 1.6 Max. Unit 4 16 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS4DPF20L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS4DPF20L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS4DPF20L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS4DPF20L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS4DPF20L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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