STSJ25NF3LL N-CHANNEL 30V - 0.0085 Ω - 25A PowerSO-8™ LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STSJ25NF3LL ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V <0.0105 Ω 25 A TYPICAL RDS(on) = 0.0085 Ω @ 10V TYPICAL Qg = 24 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower R thj-c. PowerSO-8™ INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS DRAIN CONTACT ALSO ON THE BACKSIDE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Value Unit 30 V 30 V ± 16 V ID Drain Current (continuous) at TC = 25°C (*) 25 A ID Drain Current (continuous) at TC = 25°C (#) 12 A ID Drain Current (continuous) at TC = 100°C 16 A Drain Current (pulsed) 100 A Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C (#) 70 3 W W IDM(•) Ptot (•) Pulse width limited by safe operating area. (*) Value limited by wires bonding October 2003 NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: 25NF3LL@ 1/8 STSJ25NF3LL THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max Max 1.8 42 150 -55 to 150 °C/W °C/W °C °C (*) When mounted on FR-4 board with 0.5 in2 pad of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 12.5 A ID = 12.5 A Min. Typ. 1 V 0.0085 0.011 0.0105 0.013 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS=15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 12.5 A Min. 20 S 1650 540 130 pF pF pF STSJ25NF3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 12.5 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 23 156 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=25A VGS=4.5V 24 8.5 12 33 nC nC nC Typ. Max. Unit (see test circuit, Figure 2) ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 12.5 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 27 28 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 25 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 25 A VDD = 25 V Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 40 50 2.5 Max. Unit 25 100 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STSJ25NF3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STSJ25NF3LL Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STSJ25NF3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STSJ25NF3LL 7/8 STSJ25NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 8/8