STC6NF30V N-CHANNEL 30V - 0.020 Ω - 6A TSSOP8 2.5V-DRIVE STripFET™ II POWER MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STC6NF30V 30 V < 0.025 Ω ( @ 4.5 V ) < 0.030 Ω ( @ 2.5 V ) 6A TYPICAL RDS(on) = 0.020 Ω @ 4.5 V TYPICAL RDS(on) = 0.025 Ω @ 2.5 V ULTRA LOW THRESHOLD GATE DRIVE (2.5 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DOUBLE DICE IN COMMON DRAIN CONFIGURATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance. TSSOP8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY SAFETY UNIT FOR NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Value Unit 30 V 30 V ± 12 V A ID Drain Current (continuous) at TC = 25°C 6 ID Drain Current (continuous) at TC = 100°C 3.8 A Drain Current (pulsed) 24 A 1.5 W IDM(•) Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. February 2003 1/8 STC6NF30V THERMAL DATA Rthj-pcb Rthj-pcb Tj Tstg Thermal Resistance Junction-PCB (**) Thermal Resistance Junction-PCB (*) Operating Junction Temperature Storage temperature Max Max 100 83.5 -55 to 150 -55 to 150 °C/W °C/W °C °C (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum recommended footprint ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 12 V Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V VGS = 2.5 V ID = 3 A ID = 3 A Min. Typ. 0.6 V 0.020 0.025 0.025 0.030 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 10 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz, VGS = 0 ID = 6 A Min. 18 S 800 180 32 pF pF pF STC6NF30V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 3 A VDD = 15 V RG = 4.7 Ω VGS = 2.5 V (Resistive Load, Figure 1) 20 25 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V ID= 6A VGS=2.5V (see test circuit, Figure 2) 6.8 2.0 3.4 9 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 3 A VDD = 15 V RG = 4.7Ω, VGS = 2.5 V (Resistive Load, Figure 1) 32 13 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 6 A Min. Typ. VGS = 0 di/dt = 100A/µs ISD = 6 A VDD = 15 V Tj = 150°C (see test circuit, Figure 3) 25 21 1.7 Max. Unit 6 24 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area. Thermal Impedance. 3/8 STC6NF30V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STC6NF30V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature Thermal resistance and max power 5/8 STC6NF30V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STC6NF30V TSSOP8 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. MAX. A 1.05 1.20 0.041 0.047 A1 0.05 0.15 0.002 0.006 A2 0.80 1.05 0.032 0.041 b 0.19 0.30 0.008 0.012 c 0.090 0.20 0.003 0.007 D 2.90 3.10 0.114 0.122 E 6.20 6.60 0.240 0.260 E1 4.30 4.50 0.170 0.177 0.75 0.018 e L 0.65 0.45 L1 k 0.025 1.00 0o 0.030 0.039 8o 0.192 0.208 7/8 STC6NF30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8