STMICROELECTRONICS STC5NF30V

STC5NF30V
N-CHANNEL 30V - 0.027 Ω - 5A TSSOP8
2.7V-DRIVE STripFET™ II POWER MOSFET
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STC5NF30V
30 V
< 0.031 Ω ( @ 4.5 V )
< 0.035 Ω ( @ 2.7 V )
5A
TYPICAL RDS(on) = 0.027 Ω @ 4.5 V
TYPICAL RDS(on) = 0.031 Ω @ 2.7 V
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
TSSOP8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Unit
30
V
20
V
± 12
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3
A
Drain Current (pulsed)
20
A
1.5
W
IDM(•)
Total Dissipation at TC = 25°C
Ptot
(•) Pulse width limited by safe operating area.
June 2003
.
Value
1/8
STC5NF30V
THERMAL DATA
Rthj-pcb
Rthj-pcb
Tj
Tstg
Thermal Resistance Junction-PCB (**)
Thermal Resistance Junction-PCB (*)
Operating Junction Temperature
Storage temperature
Max
Max
100
83.5
-55 to 150
-55 to 150
°C/W
°C/W
°C
°C
(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec
(**) When Mounted on minimum recommended footprint
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5 V
VGS = 2.7 V
ID = 2.5 A
ID = 2.5 A
Min.
Typ.
0.6
V
0.027
0.031
0.031
0.035
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/8
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS=15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V f = 1 MHz, VGS = 0
ID = 2.5 A
Min.
9.5
S
460
200
50
pF
pF
pF
STC5NF30V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 2.5 A
VDD = 10 V
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
7
33
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 16V ID= 5A VGS=4.5V
(see test circuit, Figure 2)
8.5
1.8
2.4
11.5
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
ID = 2.5 A
VDD = 10 V
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 1)
27
10
ns
ns
td(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
ID = 5 A
Vclamp = 16 V
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 3)
26
11
21
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD = 5 A
Min.
Typ.
VGS = 0
di/dt = 100A/µs
ISD = 5 A
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 3)
26
13
1
Max.
Unit
5
20
A
A
1.2
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STC5NF30V
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STC5NF30V
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Thermal resistance and max power
.
.
5/8
STC5NF30V
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
Fig. 2: Gate Charge test Circuit
STC5NF30V
TSSOP8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
MAX.
A
1.05
1.20
0.041
0.047
A1
0.05
0.15
0.002
0.006
A2
0.80
1.05
0.032
0.041
b
0.19
0.30
0.008
0.012
c
0.090
0.20
0.003
0.007
D
2.90
3.10
0.114
0.122
E
6.20
6.60
0.240
0.260
E1
4.30
4.50
0.170
0.177
0.75
0.018
e
L
0.65
0.45
L1
k
0.025
1.00
0o
0.030
0.039
8o
0.192
0.208
7/8
STC5NF30V
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