STC5NF30V N-CHANNEL 30V - 0.027 Ω - 5A TSSOP8 2.7V-DRIVE STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STC5NF30V 30 V < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.027 Ω @ 4.5 V TYPICAL RDS(on) = 0.031 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TSSOP8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 30 V 20 V ± 12 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3 A Drain Current (pulsed) 20 A 1.5 W IDM(•) Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. June 2003 . Value 1/8 STC5NF30V THERMAL DATA Rthj-pcb Rthj-pcb Tj Tstg Thermal Resistance Junction-PCB (**) Thermal Resistance Junction-PCB (*) Operating Junction Temperature Storage temperature Max Max 100 83.5 -55 to 150 -55 to 150 °C/W °C/W °C °C (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum recommended footprint ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 12V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V VGS = 2.7 V ID = 2.5 A ID = 2.5 A Min. Typ. 0.6 V 0.027 0.031 0.031 0.035 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS=15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz, VGS = 0 ID = 2.5 A Min. 9.5 S 460 200 50 pF pF pF STC5NF30V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 2.5 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 7 33 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 16V ID= 5A VGS=4.5V (see test circuit, Figure 2) 8.5 1.8 2.4 11.5 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time ID = 2.5 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 27 10 ns ns td(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time ID = 5 A Vclamp = 16 V RG = 4.7Ω, VGS = 4.5 V (Inductive Load, Figure 3) 26 11 21 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 5 A Min. Typ. VGS = 0 di/dt = 100A/µs ISD = 5 A VDD = 10 V Tj = 150°C (see test circuit, Figure 3) 26 13 1 Max. Unit 5 20 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STC5NF30V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STC5NF30V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Thermal resistance and max power . . 5/8 STC5NF30V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STC5NF30V TSSOP8 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. MAX. A 1.05 1.20 0.041 0.047 A1 0.05 0.15 0.002 0.006 A2 0.80 1.05 0.032 0.041 b 0.19 0.30 0.008 0.012 c 0.090 0.20 0.003 0.007 D 2.90 3.10 0.114 0.122 E 6.20 6.60 0.240 0.260 E1 4.30 4.50 0.170 0.177 0.75 0.018 e L 0.65 0.45 L1 k 0.025 1.00 0o 0.030 0.039 8o 0.192 0.208 7/8 STC5NF30V Information furnished is believed to be accurate and reliable. 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