STDID5B ® N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE STDID5B ■ ■ ■ VDSS R DS(on) ID 55 V < 0.12 Ω 12 A TYPICAL RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Drain-source Voltage (V GS = 0) 55 V Drain- gate Voltage (R GS = 20 kΩ) 55 V ± 20 V 12 A VGS Gate-source Voltage I D (* ) Drain Current (continuous) at T c = 25 o C ID I DM (•) P tot o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor EAS (1) T st g Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area May 2000 Unit (1) starting Tj = 25 oC, ID =12A , VDD = 30V 8 A 48 A 35 W 0.23 W/ o C 25 mJ -65 to 175 o C 175 o C New RDS(on) spec. starting from July ’98 1/6 STDID5B THERMAL DATA R thj-case R thj-amb Tl o 4.3 100 275 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 55 Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.1 0.12 Ω I D = 9.6 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 12 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 10 A V GS = 0 V Min. Typ. 4 Max. Unit S 360 55 25 pF pF pF STDID5B ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) 10 25 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V I D = 12 A V GS = 10 V 10 3.5 3.2 13.5 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol t d(of f) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. 31 8 V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/µs V DD = 30 V T j = 150 o C (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 12 48 A A 1.3 V 38 ns 61 nC 3.2 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STDID5B Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STDID5B TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 5/6 STDID5B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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