STMICROELECTRONICS STDID5B

STDID5B
®
N - CHANNEL 55V - 0.1 Ω - 12A TO-252
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE
STDID5B
■
■
■
VDSS
R DS(on)
ID
55 V
< 0.12 Ω
12 A
TYPICAL RDS(on) = 0.1 Ω
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
Parameter
Value
Drain-source Voltage (V GS = 0)
55
V
Drain- gate Voltage (R GS = 20 kΩ)
55
V
± 20
V
12
A
VGS
Gate-source Voltage
I D (* )
Drain Current (continuous) at T c = 25 o C
ID
I DM (•)
P tot
o
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
Total Dissipation at T c = 25 o C
Derating Factor
EAS (1)
T st g
Tj
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
Unit
(1) starting Tj = 25 oC, ID =12A , VDD = 30V
8
A
48
A
35
W
0.23
W/ o C
25
mJ
-65 to 175
o
C
175
o
C
New RDS(on) spec. starting from July ’98
1/6
STDID5B
THERMAL DATA
R thj-case
R thj-amb
Tl
o
4.3
100
275
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
o
C/W
C/W
o
C
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
V GS = 0
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
55
Unit
V
T c = 125 o C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.1
0.12
Ω
I D = 9.6 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
12
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/6
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 10 A
V GS = 0 V
Min.
Typ.
4
Max.
Unit
S
360
55
25
pF
pF
pF
STDID5B
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay Time
Rise Time
V DD = 30 V
ID = 6 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
10
25
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 48 V I D = 12 A V GS = 10 V
10
3.5
3.2
13.5
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
t d(of f)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
31
8
V DD = 30 V
ID = 6 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 12 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 12 A
di/dt = 100 A/µs
V DD = 30 V
T j = 150 o C
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
V GS = 0
Max.
Unit
12
48
A
A
1.3
V
38
ns
61
nC
3.2
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STDID5B
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STDID5B
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
5/6
STDID5B
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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