STN5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT-223 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STN5PF20V ■ ■ ■ ■ VDSS RDS(on) ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A 2 TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V. 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ POWER MANAGEMENT IN CELLULAR PHONES ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STN5PF20V N5PF20V SOT-223 TAPE & REEL October 2003 1/8 STN5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V Gate- source Voltage ±8 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.1 A Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 2.5 W IDM () PTOT () Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-pcb(*) Thermal Resistance Junction-Pc BoardMax 62.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 90 °C/W Max. Operating Junction Temperature –55 to 150 °C Storage Temperature –55 to 150 °C Tj Tstg (*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 20 Unit V VDS = Max Rating, TC = 125 °C VGS = ± 8V 1 µA 10 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5V, ID = 2.5 A 0.065 0.080 Ω VGS = 2.5V, ID = 2.5 A 0.085 0.10 Ω Typ. Max. Unit 0.45 V DYNAMIC 2/8 Symbol Parameter gfs (1) Forward Transconductance VDS = 15 V , ID = 2.5 A Test Conditions Min. 6.6 S Ciss Input Capacitance VDS = 15 V, f = 1 MHz, VGS = 0 412 pF C oss Output Capacitance 179 pF Crss Reverse Transfer Capacitance 42.5 pF STN5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 11 ns Rise Time VDD = 10 V, ID = 2.5 A RG = 4.7Ω VGS = 2.5 V (see test circuit, Figure 1) 47 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 5 A, VGS = 2.5V (see test circuit, Figure 2) 4.5 0.73 1.75 6 nC nC nC Typ. Max. Unit Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 10 V, ID = 2.5 A, RG = 4.7Ω, VGS = 2.5 V (see test circuit, Figure 1) 39 20 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (1) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 5 A Source-drain Current (pulsed) 20 A Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 16 V, Tj = 150°C (see test circuit, Figure 3) Min. Typ. 1.2 32 12.8 0.8 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/8 STN5PF20V Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Transfer Characteristics Static Drain-source On Resistance STN5PF20V Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STN5PF20V SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 7/8 STN5PF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8