ETC STN5PF20V

STN5PF20V
P-CHANNEL 20V - 0.065Ω - 5A SOT-223
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
STN5PF20V
■
■
■
■
VDSS
RDS(on)
ID
20 V
< 0.080 Ω (@4.5V)
< 0.10 Ω (@2.5V)
5A
2
TYPICAL RDS(on) = 0.065Ω (@4.5V)
TYPICAL RDS(on) = 0.085Ω (@2.5V)
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven
at 2.5V.
1
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ POWER MANAGEMENT IN CELLULAR
PHONES
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STN5PF20V
N5PF20V
SOT-223
TAPE & REEL
October 2003
1/8
STN5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
Gate- source Voltage
±8
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3.1
A
Drain Current (pulsed)
20
A
Total Dissipation at TC = 25°C
2.5
W
IDM ()
PTOT
() Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-pcb(*)
Thermal Resistance Junction-Pc BoardMax
62.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
90
°C/W
Max. Operating Junction Temperature
–55 to 150
°C
Storage Temperature
–55 to 150
°C
Tj
Tstg
(*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu
ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
20
Unit
V
VDS = Max Rating, TC = 125 °C
VGS = ± 8V
1
µA
10
µA
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5V, ID = 2.5 A
0.065
0.080
Ω
VGS = 2.5V, ID = 2.5 A
0.085
0.10
Ω
Typ.
Max.
Unit
0.45
V
DYNAMIC
2/8
Symbol
Parameter
gfs (1)
Forward Transconductance
VDS = 15 V , ID = 2.5 A
Test Conditions
Min.
6.6
S
Ciss
Input Capacitance
VDS = 15 V, f = 1 MHz, VGS = 0
412
pF
C oss
Output Capacitance
179
pF
Crss
Reverse Transfer
Capacitance
42.5
pF
STN5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
11
ns
Rise Time
VDD = 10 V, ID = 2.5 A
RG = 4.7Ω VGS = 2.5 V
(see test circuit, Figure 1)
47
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10 V, ID = 5 A,
VGS = 2.5V
(see test circuit, Figure 2)
4.5
0.73
1.75
6
nC
nC
nC
Typ.
Max.
Unit
Turn-on Delay Time
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
VDD = 10 V, ID = 2.5 A,
RG = 4.7Ω, VGS = 2.5 V
(see test circuit, Figure 1)
39
20
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM
VSD (1)
trr
Qrr
IRRM
Parameter
Test Conditions
Max.
Unit
Source-drain Current
5
A
Source-drain Current (pulsed)
20
A
Forward On Voltage
ISD = 5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs,
VDD = 16 V, Tj = 150°C
(see test circuit, Figure 3)
Min.
Typ.
1.2
32
12.8
0.8
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
3/8
STN5PF20V
Safe Operating Area
Output Characteristics
Transconductance
4/8
Thermal Impedence
Transfer Characteristics
Static Drain-source On Resistance
STN5PF20V
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN5PF20V
Fig. 1: Switching Times Test Circuit For
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
Fig. 2: Gate Charge test Circuit
STN5PF20V
SOT-223 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
1.80
MAX.
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
10o
V
A1
10o
0.02
P008B
7/8
STN5PF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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