STT3PF20V
P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L
2.7-DRIVE STripFET™ II POWER MOSFET
TYPE
STT3PF20V
■
■
■
■
VDSS
9
RDS(on)
W#9
W#9
ID
$
TYPICAL RDS(on) = 0.14 W (@4.5V)
TYPICAL RDS(on) = 0.20 W (@2.7V)
ULTRA LOW THRESHOLD GATE DRIVE
(2.7V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ CELLULAR
MARKING
■ STP2
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kW)
Gate- source Voltage
Unit
20
V
20
V
± 12
V
ID
Drain Current (continuous) at TC = 25°C
2.2
A
ID
Drain Current (continuous) at TC = 100°C
1.39
A
Drain Current (pulsed)
8.8
A
1.6
W
IDM()
Total Dissipation at TC = 25°C
Ptot
() Pulse width limited by safe operating area.
October 2002
.
Value
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/8
STT3PF20V
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
78
-55 to 150
-55 to 150
°C/W
°C
°C
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12 V
V(BR)DSS
Min.
Typ.
Max.
20
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5 V
VGS = 2.7 V
ID = 250 µA
Min.
Typ.
0.6
ID = 1 A
ID = 1 A
V
0.14
0.20
0.20
0.25
W
Typ.
Max.
Unit
W
DYNAMIC
Symbol
2/8
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS=15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V f = 1 MHz, VGS = 0
ID = 1 A
Min.
4
S
315
87
17
pF
pF
pF
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STT3PF20V
SOT23-6L MECHANICAL DATA
mm
DIM.
MIN.
mils
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
0.035
0.057
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.25
0.50
0.010
0.020
C
0.09
0.20
0.004
0.008
D
2.80
3.10
0.110
0.122
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.35
0.55
0.014
0.022
e
0.95
0.037
e1
1.90
0.075
A A2
e
A1 b
L
c
E
e1
D
E1
7/8
STT3PF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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