STTA212S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY SMC DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they aloso highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particulary suitable and efficient in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizingdiodes secondary of SMPS as high voltage rectifier diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V VRSM Non repetitive peak reverse voltage 1200 V IF(RMS) RMS forward current 10 A IFRM Repetitive peak forward current tp = 5µs F=5kHz square 20 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 25 A T stg Storage temperature range - 65 to + 150 °C 125 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4A 1/8 STTA212S THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Test conditions Value Unit 21 °C/W Junction to lead thermal resistance Conduction power dissipation IF(AV) = 1.5A δ = 0.5 Tlead= 72°C 2.5 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tlead= 67°C 2.8 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter Forward voltage drop Threshold voltage rd Dynamic resistance Typ Max Unit Tj = 25°C Tj = 125°C 1.65 1.5 V 1.1 VR = 0.8 x VRRM Tj = 25°C Tj = 125°C 20 400 µA 150 Ip < 3.IAV Tj = 125°C 1.15 V 175 mΩ Max Unit IF = 2A Reverse leakage current Vto Test pulses : Test Conditions Min * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum recovery current Softness factor Test conditions Min Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR = 30V Tj = 125°C VR = 600V dIF/dt = -16 A/µs dIF/dt = -50 A/µs Tj = 125°C VR = 600V dIF/dt = -50 A/µs Typ ns 65 115 A IF = 2A 3.6 6.0 IF = 2A 0.9 / TURN-ON SWITCHING Symbol 2/8 Parameter t fr Forward recovery time VFp Peak forward voltage Test conditions Tj = 25°C IF = 2 A dIF/dt = 16 A/µs measured at 1.1 × VFmax Min Typ Max Unit 900 ns 35 V STTA212S Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) P1(W) 3.0 δ=0.1 δ=0.5 δ=0.2 5E+1 δ=1 Tj=125°C 2.5 1E+1 2.0 1E+0 1.5 1.0 1E-1 0.5 VFM(V) IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 3: Variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board FR4, e(Cu)=35µm, S(Cu)=1cm2). 1E-2 0 1 2 3 4 5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-a)(°C/W) 20 100 VR=600V Tj=125°C 15 IF=2*IF(av) 10 10 IF=IF(av) 5 dIF/dt(A/ µs) tp(s) 1 1E-2 1E-1 1E+0 0 1E+1 1E+2 5E+2 Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical values). 0 20 40 60 80 100 120 140 160 180 200 Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) S factor 400 1.20 VR=600V Tj=125°C 350 VR=600V Tj=125°C IF<2*IF(av) 300 1.00 250 IF=2*IF(av) 200 150 0.80 IF=IF(av) 100 0 20 40 60 80 100 120 dIF/dt(A/ µs) 50 dIF/dt(A/ µs) 0.60 140 160 180 200 0 0 20 40 60 80 100 120 140 160 180 200 3/8 STTA212S Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt. VFP(V) 1.1 60 Tj=125°C 50 1.0 S factor IF=IF(av) 40 0.9 30 IRM 20 0.8 10 Tj(°C) 0.7 25 50 75 100 125 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 800 VFR=1.1*VF max. IF=IF(av) 700 Tj=125°C 600 500 400 300 200 4/8 dIF/dt(A/ µs) 0 20 40 60 80 100 0 dIF/dt(A/ µs) 0 20 40 60 80 100 STTA212S APPLICATION DATA The 1200V TURBOSWITCH has been designed to provide the lowest overall power losses in any all high frequency or high pulsed current operations. In such applications (fig. A to D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in the diode CONDUCTION LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the transistor due to the diode Fig. A : ”FREEWHEEL” MODE SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA212S APPLICATION DATA (Cont’d) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM t T F = 1/T = t/T Fig. D : RECTIFIER DIODE. Fig. E : STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 x IF(AV) + Rd x IF2(RMS) IF Reverse losses : Rd P2 = VR x IR x (1 - δ) VR V IR 6/8 V tO VF STTA212S APPLICATION DATA (Cont’d) Fig. F : TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3 + 2 × S) × F 6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F + 2 × dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t P3 = dIR /dt I RM VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb I dI F /dt = VR /L S = tb / ta RECTIFIER OPERATION ta tb V t IRM Turn-off losses : with non negligible serial inductance dI R /dt VR P3’ = VR × IRM 2 × S × F L × IRM 2 × F + 6 x dIF ⁄ dt 2 P3, P3’ and P5 are suitable for power MOSFET and IGBT trr = ta + tb S = tb/ta Fig. G : TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 Turn-on losses : t P4 = 0.4 (VFP - VF) x IFmax x tfr x F VF V Fp VF 1.1V F 0 tfr t 7/8 STTA212S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. D E A1 A2 C L E2 b Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 FOOTPRINT DIMENSIONS (in millimeters) SMC Plastic 3.3 2.0 4.2 2.0 Ordering type Marking Package Weight Base qty Delivery mode STTA212S T53 SMC 0.243g 2500 Tape & reel Epoxy meets UL94,V0 Band indicates cathode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8