STTH1506DPI ® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 15 A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 4.8 A trr (typ.) 16 ns 1 2 2 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=16pF 1 ■ DOP3I (insulated) ■ ■ DESCRIPTION ■ The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ■ ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current Value 600 Unit V 26 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 130 A Ipeak Peak current waveform δ = 0.15 Tc = 120°C 35 A -65 +150 °C + 150 °C Tstg Tj Storage temperature range Maximum operating junction temperature October 2003 - Ed: 2A 1/5 STTH1506DPI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Test conditions Junction to case Value Unit 1.6 °C/W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR* VF** Parameter Tests Conditions Reverse leakage current VR = VRRM Forward voltage drop IF = 15 A Min. Typ. Max. Unit 20 µA Tj = 25°C 30 Tj = 125°C 200 3.6 Tj = 25°C 1.95 Tj = 150°C V 2.4 Pulse test: * tp = 100ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 1.7 x IF(AV) + 0.047 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A Min. Typ. Max. 16 Tj = 25°C Unit ns 35 IF = 1 A dIF/dt = - 50A/µs VR = 30 V IRM Reverse recovery current S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 80 nC VR = 400 V IF = 15 A dIF/dt = -200 A/µs 4.8 Tj = 125°C 6.0 A TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Parameter Tests Conditions Min. Typ. Max. Unit Forward recovery time IF = 15 A dIF/dt = 100A/µs, VFR = 1.1 x VFmax Tj = 25°C 200 ns Forward recovery voltage IF = 15 A dIF/dt = 100 A/µs Tj = 25°C 6 V STTH1506DPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 55 δ = 0.1 50 130 δ = 0.2 δ = 0.5 120 Tj=125°C (maximum values) 110 45 δ = 0.05 100 40 δ=1 90 35 80 30 70 25 60 20 50 Tj=125°C (typical values) Tj=25°C (maximum values) 40 15 T 30 10 20 5 IF(AV)(A) δ=tp/T VFM(V) 10 tp 0 0 0 2 4 6 8 10 12 14 16 18 20 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 2 Zth(j-c)/Rth(j-c) 0.9 18 0.8 16 VR=400V Tj=125°C δ = 0.5 0.6 12 0.5 10 δ = 0.1 6 7 8 IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 14 0.7 δ = 0.2 5 IRM(A) 20 0.3 4 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). 1.0 0.4 3 IF=0.25 x IF(AV) 8 6 T 4 0.2 Single pulse 0.1 tp(s) δ=tp/T 2 tp dIF/dt(A/µs) 0 0.0 1.E-03 1.E-02 0 1.E+00 1.E-01 Fig. 5: Reverse recovery time versus dIF/dt (typical values). 200 400 600 800 1000 Fig. 6: Reverse recovery charges versus dIF/dt (typical values). trr(ns) Qrr(nC) 240 70 IF=2 x IF(AV) VR=400V Tj=125°C VR=400V Tj=125°C 220 60 200 IF=IF(AV) 180 50 160 IF=2 x IF(AV) IF=IF(AV) 40 140 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 120 30 100 80 20 60 40 10 dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 3/5 STTH1506DPI Fig. 7: Softness factor versus dIF/dt (typical values). Fig. 8: Relative variations of dynamic parameters versus junction temperature. S 2.50 0.80 IF=IF(AV) VR=400V Tj=125°C 0.70 IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 2.00 S 1.75 0.60 1.50 1.25 0.50 1.00 IRM 0.75 0.40 0.50 0.30 Tj(°C) 0.25 dIF/dt(A/µs) 0.00 25 0.20 0 200 400 600 800 50 75 100 125 1000 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). Fig. 10: Forward recovery time versus dIF/dt (typical values). VFP(V) tfr(ns) 350 12 IF=IF(AV) Tj=125°C 11 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 300 10 9 250 8 7 200 6 150 5 4 100 3 2 50 dIF/dt(A/µs) 1 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/5 10 100 1000 0 100 200 300 400 500 STTH1506DPI PACKAGE MECHANICAL DATA DOP3I DIMENSIONS REF. Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P 1.20 1.40 0.047 0.055 R ■ Millimeters 4.60 typ. 0.181 typ. Ordering code Marking Package Weight Base qty Delivery mode STTH1506DPI STTH1506DPI DOP3I 4.46 g. 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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