STTH3006DPI ® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 30 A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 6.7 A trr (typ.) 25 ns 1 2 2 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=16pF 1 ■ DOP3I (insulated) ■ DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ■ ■ ■ ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 32 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A Ipeak Peak current waveform δ = 0.15 Tc = 120°C 50 A -65 +150 °C + 150 °C Tstg Tj Storage temperature range Maximum operating junction temperature October 2003 - Ed: 2A 1/5 STTH3006DPI THERMAL AND POWER DATA Symbol Parameter Test conditions Rth (j-c) Junction to case thermal resistance Value Unit 1.3 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current VR = VRRM Min. Tj = 25°C 60 Tj = 125°C VF ** Forward voltage drop IF = 30 A Typ. Max. Unit 40 µA 400 3.6 Tj = 25°C 1.95 Tj = 150°C V 2.4 Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.023 IF2(RMS) DYNAMIC CHARACTERISTICS Symbol trr Parameter Tests Conditions Reverse recovery IF = 0.5 A time IR = 1 A Irr = 0.25 A Min. Typ. 25 Tj = 25°C Reverse recovery VR = 400 V IF = 30 A current dIF/dt = -200 A/µs Unit ns 45 IF = 1 A dIF/dt = - 50 A/µs VR = 30 V IRM Max. 6.7 Tj = 125°C 8.5 A S Reverse recovery softness factor 0.3 - Qrr Reverse recovery charges 145 nC TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Parameter Tests Conditions Forward recovery IF = 30 A dIF/dt = 100 A/µs time VFR = 1.1 x VF max Transient peak forward recovery voltage Min. Tj = 25°C IF = 30 A dIF/dt = 100 A/µs Tj = 25°C Typ. Max. Unit 400 ns 6 V STTH3006DPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 110 100 90 200 δ = 0.2 δ = 0.1 δ = 0.5 180 δ = 0.05 Tj=125°C (maximum values) 160 80 140 70 Tj=125°C (typical values) 120 δ=1 60 Tj=25°C (maximum values) 100 50 80 40 60 30 T 40 20 10 IF(AV)(A) 0 5 10 15 20 20 δ=tp/T 0 25 30 VFM(V) tp 0 35 40 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 2 3 4 5 6 7 8 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). Zth(j-c)/Rth(j-c) IRM(A) 1.0 16 VR=400V Tj=125°C 0.9 IF=2 x IF(AV) 14 0.8 12 IF=IF(AV) 0.7 δ = 0.5 0.6 IF=0.5 x IF(AV) 10 IF=0.25 x IF(AV) 8 0.5 0.4 δ = 0.2 0.3 δ = 0.1 6 T 4 0.2 Single pulse 0.1 δ=tp/T tp(s) 2 dIF/dt(A/µs) tp 0 0.0 1.E-03 1.E-02 1.E-01 0 1.E+00 Fig. 5: Reverse recovery time versus dIF/dt (typical values). 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (typical values). trr(ns) Qrr(nC) 90 300 VR=400V Tj=125°C 80 IF=2 x IF(AV) VR=400V Tj=125°C 275 250 IF=IF(AV) IF=2 x IF(AV) 70 225 IF=IF(AV) IF=0.5 x IF(AV) 60 200 175 50 IF=0.5 x IF(AV) 150 40 125 100 30 75 20 50 10 25 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH3006DPI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). S Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 3.00 0.40 2.75 IF=IF(AV) VR=400V Tj=125°C IF=IF(AV) VR=400V Reference: Tj=125°C 2.50 2.25 0.35 S 2.00 1.75 1.50 0.30 1.25 1.00 0.75 0.25 IRM 0.50 0.25 dIF/dt(A/µs) Tj(°C) 0.00 0.20 25 0 50 100 150 200 250 300 350 400 450 50 75 100 125 500 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). Fig. 10: Forward recovery time versus dIF/dt (typical values). VFP(V) tfr(ns) 800 12 IF=IF(AV) Tj=125°C 11 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 700 10 600 9 8 500 7 400 6 5 300 4 3 200 2 100 1 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/5 10 100 1000 0 100 200 300 400 500 STTH3006DPI PACKAGE MECHANICAL DATA DOP3I DIMENSIONS REF. Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 N 10.8 11.3 0.425 0.444 P 1.20 1.40 0.047 0.055 R ■ Millimeters 4.60 typ. 0.181 typ. Ordering code Marking Package Weight Base qty Delivery mode STTH3006DPI STTH3006DPI DOP3I 4.46 g. 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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