STTH1506TPI ® Tandem 600V Hyperfast Rectifer MAJOR PRODUCTS CHARACTERISTICS IF(AV) 15 A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4.8 A 1 3 2 1 2 FEATURES AND BENEFITS Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink. Matched diodes for typical PFC application without need for voltage balance network. C = 7pF 3 ■ TOP3I (insulated) ■ ■ DESCRIPTION ■ The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ■ ■ ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj tp = 10 ms sinusoidal Maximum operating junction temperature Value 600 Unit V 26 A 130 A -65 +150 °C + 150 °C TM: TURBOSWITCH is a trademark of STMicroelectronics May 2002 - Ed: 1A 1/5 STTH1506TPI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Test conditions Value Unit Per diode 2.9 °C/W Coupling 0.3 Junction to case Total 1.6 Conduction power dissipation for both diodes IF(AV) = 15 A Tc = 70°C Junction to case Rth (c) Rth (j-c) P1 δ = 0.5 50 W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter IR* Reverse leakage current VR = VRRM Forward voltage drop IF = 15 A VF** Tests Conditions Min. Typ. Max. Unit 20 µA Tj = 25°C 30 Tj = 125°C 200 3.6 Tj = 25°C 2.1 Tj = 125°C V 2.6 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 1.8 x IF(AV) + 0.053 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A Min. Typ. 16 Tj = 25°C Sfactor Reverse recovery current VR = 400 V IF = 15 A dIF/dt = -200 A/µs Unit ns 35 IF = 1 A dIF/dt = - 50A/µs VR = 30 V IRM Max. 4.8 Tj = 125°C 6.0 0.4 A - TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Parameter Tests Conditions Min. Typ. Max. Unit Forward recovery time IF = 15 A dIF/dt = 100A/µs, VFR = 1.1 x VFmax Tj = 25°C 200 ns Forward recovery voltage IF = 15 A dIF/dt = 100 A/µs Tj = 25°C 6 V STTH1506TPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 55 50 130 δ = 0.2 δ = 0.1 δ = 0.5 120 110 45 δ = 0.05 100 40 δ=1 90 35 80 30 70 25 60 20 50 Tjj=125°C (Maximum values) values) (Maximum Tj=125°C (Typical values) 40 15 T 30 10 Tj=25°C (Maximum values) 20 5 δ=tp/T IF(AV)(A) VFM(V) 10 tp 0 0 0 2 4 6 8 10 12 14 16 18 20 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 2 3 4 5 6 7 8 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). Zth(j-c)/Rth(j-c) 1.0 22 0.9 20 IRM(A) IF=2 x IF(AV) VR=400V Tj=125°C 18 0.8 IF=IF(AV) 16 0.7 δ = 0.5 0.6 IF=0.5 x IF(AV) 14 12 IF=0.25 x IF(AV) 0.5 10 0.4 δ = 0.2 0.3 δ = 0.1 8 6 T 0.2 4 Single pulse 0.1 δ=tp/T tp(s) 2 tp dIF/dt(A/µs) 0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 200 400 600 800 1000 Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) trr(ns) 100 350 VR=400V Tj=125°C VR=400V Tj=125°C 90 300 80 250 70 60 IF=2 x IF(AV) 200 IF=IF(AV) IF=2 x IF(AV) 50 150 40 30 IF=IF(AV) IF=0.5 x IF(AV) 100 IF=0.5 x IF(AV) 20 50 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 3/5 STTH1506TPI Fig. 7: Softness factor versus dIF/dt (typical values). Fig. 8: Relative variations of dynamic parameters versus junction temperature. S factor 2.50 0.80 IF=IF(AV) VR=400V Tj=125°C 0.70 IF=IF(AV) VR=400V Reference: Tj=125°C 2.25 2.00 S factor 1.75 0.60 1.50 1.25 0.50 1.00 IRM 0.75 0.40 0.50 0.30 0.25 dIF/dt(A/µs) Tj(°C) 0.00 0.20 25 0 200 400 600 800 50 75 100 125 1000 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). Fig. 10: Forward recovery time versus dIF/dt (90% confidence). VFP(V) tfr(ns) 400 16 IF=IF(AV) Tj=125°C 14 350 12 300 10 250 8 200 6 150 4 100 2 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mV Tj=25°C 100 VR(V) 10 1 4/5 10 100 1000 0 100 200 300 400 500 STTH1506TPI PACKAGE MECHANICAL DATA TOP3I DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 L 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R ■ 4.60 0.181 Ordering code Marking Package Weight Base qty Delivery mode STTH1506TPI STTH1506TPI TOP3I 4.46 g. 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. 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