STPS340U/S/B ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 40 V Tj (max) 150 °C VF (max) 0.57 V K A FEATURES AND BENEFITS n n n n n n n NC VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE AVALANCHE CAPABILITY SPECIFIED DPAK STPS340B DESCRIPTION Single chip Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, SMC and DPAK this device is intended for use in low and medium voltage operation, high frequency inverters, free wheeling and polarity protection applications where low switching losses are required. SMB (JEDEC DO-214AA) STPS340U SMC (JEDEC DO-214AB) STPS340S ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Value 40 Unit V DPAK 6 A SMB / SMC 10 Repetitive peak reverse voltage RMS forward current Average forward current Tc = 135°C δ = 0.5 TL = 105°C δ = 0.5 DPAK SMB / SMC IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp = 2 µs A 1 A W - 65 to + 150 °C Maximum operating junction temperature + 150 °C Critical rate of rise of reverse voltage 10000 V/µs Repetitive peak avalanche power Tstg Storage temperature range dV/dt 75 1300 PARM Tj A 3 July 2003 - Ed: 7B tp = 1µs F = 1kHz square Tj = 25°C 1/7 STPS340U/S/B THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-c) Parameter Junction to leads Junction to case SMC Value 20 SMB 25 DPAK 5.5 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current VF * Tests Conditions Forward voltage drop Min. Typ. Max. 20 Unit µA 2 10 mA V Tj = 25°C VR = VRRM Tj = 125°C VR = VRRM Tj = 25°C IF = 3 A 0.63 Tj = 25°C IF = 6 A 0.84 Tj = 125°C IF = 3 A 0.52 0.57 Tj = 125°C IF = 6 A 0.63 0.72 Pulse test : * tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.050 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average current temperature (δ =0.5). ambient IF(av)(A) PF(av)(W) 2.5 δ = 0.1 δ = 0.2 3.5 δ = 0.5 Rth(j-a)=Rth(j-c) (DPAK) 3.0 δ = 0.05 2.0 versus 2.5 δ=1 1.5 Rth(j-a)=65°C/W Rth(j-a)=Rth(j-l) (SMB/SMC) 2.0 1.5 1.0 T 1.0 0.5 0.0 0.0 δ=tp/T IF(av) (A) 0.5 1.0 1.5 2.0 2.5 3.0 0.5 tp 3.5 T 4.0 Fig. 3: Normalized avalanche power derating versus pulse duration. 0.0 0 25 Tamb(°C) tp 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 δ=tp/T 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/7 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS340U/S/B Fig. 5-1: Non repetitive surge peak forward current versus overload duration (SMB)(Maximum values). IM(A) 10 9 8 7 6 5 4 3 IM 2 1 0 1E-3 IM(A) 12 10 Ta=25°C Ta=25°C Ta=50°C Ta=50°C 4 Ta=100°C 2 t IM 1E-2 1E-1 1E+0 40 Tc=25°C 30 20 Tc=50°C Tc=100°C IM t t(s) 1E-2 t(s) δ=0.5 IM(A) δ=0.5 Ta=100°C t t(s) δ=0.5 50 0 1E-3 8 6 Fig. 5-3: Non repetitive surge peak forward current versus overload duration (DPAK) (Maximum values). 10 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (SMC) (Maximum values). 1E-1 1E+0 Fig. 6-2: Relative variation of thermal transient impedance junction to lead versus pulse duration (SMC). 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal transient impedance junction to lead versus pulse duration (SMB). Zth(j-a)/Rth(j-a) 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 0.5 δ = 0.5 0.4 0.3 0.2 δ = 0.2 0.1 δ = 0.1 tp(s) Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 T δ=tp/T tp 1.0E+2 1.0E+3 Fig. 6-3: Relative variation of thermal transient impedance junction to lead versus pulse duration(DPAK). Zth(j-a)/Rth(j-a) Zth(j-a)/Rth(j-a) 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 0.5 δ = 0.5 0.4 0.3 0.2 δ = 0.2 0.1 δ = 0.1 tp(s) Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 0 1E-3 T δ=tp/T 1.0E+2 tp 1.0E+3 1.0 0.9 Printed circuit board (e=35µm) 0.8 0.7 0.6 δ = 0.5 0.5 0.4 0.3 δ = 0.2 0.2 δ = 0.1 Single pulse 0.1 0.0 1E-3 1E-2 T tp(s) δ=tp/T 1E-1 tp 1E+0 3/7 STPS340U/S/B Fig. 7: Reverse leakage current versus reverse voltage applied (Typical values). Fig. 8: Junction capacitance versus reverse voltage applied (Typical values). IR(A) C(pF) 1E-2 500 Tj=150°C F=1MHz Tj=25°C 200 Tj=125°C 1E-3 100 Tj=100°C 50 1E-4 Tj=75°C 20 VR(V) VR(V) 1E-5 0 5 10 15 20 25 30 35 40 Fig. 9: Forward voltage drop versus forward current (Maximum values). 10.00 10 1 2 5 10 20 50 Fig. 10-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB). Rth(j-a) (°C/W) IFM(A) 120 Typical values Tj=150°C 100 1.00 80 Tj=125°C 60 0.10 40 20 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 10-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMC). S(Cu) (cm²) 0 0 1 2 5 Rth(j-a) (°C/W) Rth(j-a) (°C/W) 100 80 80 60 60 40 40 20 20 S(Cu) (cm²) S(Cu) (cm²) 4/7 4 Fig. 10-3: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (DPAK). 100 0 3 0 1 2 3 4 5 0 0 2 4 6 8 10 12 14 16 18 20 STPS340U/S/B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 5/7 STPS340U/S/B PACKAGE MECHANICAL DATA SMB DIMENSIONS E1 REF. A1 A2 C L b FOOTPRINT DIMENSIONS (in millimeters) 2.3 1.52 6/7 2.75 1.52 Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 D E Millimeters E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 STPS340U/S/B PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. A1 A2 b c E E1 E2 D L D E A1 Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 A2 C L E2 b FOOTPRINT DIMENSIONS (in millimeters) 3.3 2.0 n n 4.2 2.0 Ordering type Marking Package Weight Base qty Delivery mode STPS340U STPS340S STPS340B STPS340B-TR U34 S34 S340 S340 SMB SMC DPAK DPAK 0.107g 0.243g 0.30g 0.30g 2500 2500 75 2500 Tape and reel Tape and reel Tube Tape and reel BAND INDICATES CATHODE ON SMB, SMC EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7