STTH806DTI ® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 8A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ Insulated TO-220AB ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=7pF DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current Value 600 Unit V 14 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 80 A Ipeak Peak current waveform δ = 0.15 Tc = 130°C 17 A -65 +150 °C + 150 °C Tstg Tj Storage temperature range Maximum operating junction temperature October 2003 - Ed: 2A 1/5 STTH806DTI THERMAL AND POWER DATA Symbol Parameter Test conditions Rth (j-c) Junction to case thermal resistance Value Unit 2.6 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Tests Conditions Reverse leakage current VR = VRRM Forward voltage drop IF = 8 A Min. Typ. Max. Unit 10 µA Tj = 25°C 15 Tj = 125°C 100 3.6 Tj = 25°C 1.95 Tj = 150°C V 2.4 Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.087 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A Min. Typ. Max. 13 Tj = 25°C Unit ns 30 IF = 1 A dIF/dt = - 50A/µs VR = 30 V IRM Reverse recovery current S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 50 nC VR = 400 V IF = 8 A dIF/dt = -200 A/µs 4 Tj = 125°C 5.5 A TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Parameter Tests Conditions Min. Typ. Max. Unit Forward recovery time IF = 8 A dIF/dt = 100A/µs, VFR = 1.1 x VFmax Tj = 25°C 200 ns Forward recovery voltage IF = 8 A dIF/dt = 100 A/µs Tj = 25°C 7 V STTH806DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. P(W) IFM(A) 30 δ = 0.1 δ = 0.05 25 δ = 0.2 100 δ = 0.5 Tj=125°C (maximum values) δ=1 20 Tj=125°C (typical values) 15 Tj=25°C (maximum values) 10 10 T 5 δ=tp/T IF(AV)(A) tp VFM(V) 0 1 0 1 2 3 4 5 6 7 8 9 0 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 1 2 3 5 6 7 8 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). IRM(A) Zth(j-c)/Rth(j-c) 9 1.0 VR=400V Tj=125°C 8 IF=2 x IF(AV) 7 0.8 IF=IF(AV) 6 IF=0.5 x IF(AV) δ = 0.5 0.6 4 5 4 0.4 δ = 0.2 3 δ = 0.1 T 0.2 2 Single pulse tp(s) δ=tp/T 0.0 1E-3 1E-2 1 tp 1E-1 dIF/dt(A/µs) 1E+0 0 0 Fig. 5: Reverse recovery time versus dIF/dt (typical values). 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse charges versus dIF/dt (typical values). trr(ns) Qrr(nC) 140 60 VR=400V Tj=125°C VR=400V Tj=125°C 50 100 IF=2 x IF(AV) 40 IF=2 x IF(AV) 120 IF=IF(AV) IF=IF(AV) 80 IF=0.5 x IF(AV) 30 IF=0.5 x IF(AV) 60 20 40 10 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 3/5 STTH806DTI Fig. 7: values). Softness factor versus dIF/dt (typical S 2.6 0.6 IF=IF(AV) VR=400V Reference: Tj=125°C 2.4 IF<2xIF(AV) VR=400V Tj=125°C 0.5 Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). 2.2 2.0 1.8 0.4 S 1.6 1.4 0.3 1.2 1.0 0.2 IRM 0.8 0.6 0.1 0.4 dIF/dt(A/µs) 0 50 100 150 200 250 300 Tj(°C) 0.2 0.0 350 400 450 500 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). 0.0 25 50 75 100 125 Fig. 10: Forward recovery time versus dIF/dt (typical values). VFP(V) tfr(ns) 200 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 140 120 100 80 60 40 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 4/5 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 STTH806DTI PACKAGE MECHANICAL DATA TO-220AC B DIMENSIONS C REF. b2 Millimeters Inches Min. Typ. Max. Min. Typ. Max. A L F I a1 c2 a1 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 M c1 e ■ ■ ■ 0.147 14.00 0.511 a2 ■ 3.75 0.625 13.00 l2 b1 15.90 0.598 a2 A l4 15.20 M 2.60 0.102 Ordering code Marking Package Weight Base qty Delivery mode STTH806DTI STTH806DTI TO-220AC 2.3 g. 50 Tube Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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