STTH112/A/U ® HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 1200 V Tj (max) 175 °C VF (max) 1.65 V FEATURES AND BENEFITS ■ ■ ■ ■ ■ Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112 DESCRIPTION The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. SMA STTH112A SMB STTH112U ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V V(RMS) RMS voltage 850 V IF(AV) Average forward current 1 A DO-41 20 A SMA 18 IFSM Forward surge current Tl = 85°C δ =0.5 DO-41 Tl = 115°C δ =0.5 SMA Tl = 125°C δ =0.5 SMB t = 8.3 ms SMB Tstg Tj Storage temperature range Maximum operating junction temperature January 2003 - Ed: 2 - 50 + 175 °C + 175 °C 1/6 STTH112/A/U THERMAL PARAMETERS Symbol Parameter Rth (j-l) Junction to lead L = 10 mm Junction to ambient Rth (j-a) L = 10 mm Value Unit DO-41 45 °C/W SMA 30 SMB 25 DO-41 110 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR Reverse leakage current VF Tests conditions VR = 1200V Forward voltage drop IF = 1 A Min. Typ. Max. Unit Tj = 25°C 5 µA Tj = 125°C 50 Tj = 25°C 1.9 Tj = 125°C 1.17 V 1.65 To evaluate the maximum conduction losses use the following equation : P = 1.35 x IF(AV) + 0.3 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C 75 ns tfr Forward recovery time IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C 500 ns 30 V VFP Forward recovery voltage Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 2.2 2.0 δ = 0.05 δ = 0.1 100.0 δ = 0.2 δ = 0.5 Tj=125°C (maximum values) 1.8 1.6 δ=1 1.4 Tj=125°C (typical values) 10.0 1.2 Tj=25°C (maximum values) 1.0 0.8 1.0 0.6 T 0.4 IF(AV)(A) 0.2 δ=tp/T 0.0 0.0 2/6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) tp 0.1 1.1 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 STTH112/A/U Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Lleads = 10mm) (DO-41). Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) (SMA). Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 δ = 0.5 0.5 0.5 0.4 0.4 0.3 0.3 δ = 0.2 0.2 T 0.2 δ = 0.1 0.1 δ = 0.5 T δ = 0.2 δ = 0.1 Single pulse tp(s) 1.E-01 1.E+00 0.1 δ=tp/T 0.0 1.E+01 tp tp(s) Single pulse δ=tp/T 0.0 1.E+02 1.E-01 1.E+03 1.E+00 1.E+01 tp 1.E+02 1.E+03 Fig. 3-3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4)(SMB). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 δ = 0.5 0.5 0.4 0.3 δ = 0.2 0.2 T δ = 0.1 0.1 tp(s) Single pulse δ=tp/T 0.0 1.E-01 1.E+00 1.E+01 Fig. 4-1: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (DO-41, SMB). tp 1.E+02 1.E+03 Fig. 4-2: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a)(°C/W) Rth(j-a)(°C/W) 140 110 130 100 120 90 110 DO-41 Lleads=10mm 80 100 90 70 80 SMB 60 SMA 70 50 60 40 50 30 40 30 20 20 10 S(cm²) S(cm²) 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/6 STTH112/A/U PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 D E A1 A2 C L b FOOTPRINT (in millimeters) 1.65 1.45 4/6 2.40 1.45 Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 STTH112/A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS REF. E1 D E A1 A2 C L b Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 FOOTPRINT (in millimeters) 2.3 1.52 2.75 1.52 5/6 STTH112/A/U PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C REF. Millimeters Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 28 D 0.712 O /D O /D ■ O / B 1.102 0.863 0.028 0.034 Ordering code Marking Package Weight Base qty Delivery mode STTH112 STTH112 DO-41 0.34 g 2000 Ammopack STTH112A H12 SMA 0.068 g 5000 Tape & reel STTH112U U12 SMB 0.11 g 2500 Tape & reel STTH112RL STTH112 DO-41 0.34 g 5000 Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6