STMICROELECTRONICS STTH6002C

STTH6002C
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
200 V
A1
K
A2
Tj (max)
175 °C
VF (typ)
0.75 V
trr (typ)
22 ns
FEATURES AND BENEFITS
■
■
■
■
■
■
Suited for SMPS
Low losses
Low forward and reverse recovery times
High surge current capability
High junction temperature
Low leakage current
A2
K
A1
TO-247
STTH6002CW
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-247, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS)
RMS forward current
50
A
A
IF(AV)
Average forward current δ =0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
February 2004 - Ed: 1
Tc = 140°C
Per diode
30
Tc = 125°C
Per device
60
tp = 10 ms Sinusoidal
330
A
- 65 + 175
°C
175
°C
1/5
STTH6002C
THERMAL PARAMETERS
Symbol
Parameter
Rth (j-c)
Junction to case
Rth (j-c)
Maximum
Unit
Per diode
1.2
°C/W
Per device
0.8
0.4
Coupling
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR*
Tests conditions
Reverse leakage
current
VF**
Tj = 25°C
Min.
VR = VRRM
30
Tj = 125°C
Forward voltage drop
Typ.
Max.
Unit
30
µA
300
Tj = 25°C
IF = 30 A
1.05
Tj = 25°C
IF = 60 A
1.18
Tj = 150°C
IF = 30 A
Tj = 150°C
IF = 60 A
0.75
V
0.84
0.99
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.69 x IF(AV) + 0.005 IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
trr
IRM
tfr
VFP
2/5
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
Reverse
recovery time
Tj = 25°C
IF = 1 A VR = 30V
dIF/dt = 200 A/µs
22
27
ns
Reverse
recovery current
Tj = 125°C
IF = 30 A VR = 160V
dIF/dt = 200 A/µs
6.3
8.2
A
Forward
recovery time
Tj = 25°C
IF = 30 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
220
ns
Forward
recovery voltage
Tj = 25°C
IF = 30 A dIF/dt = 200 A/µs
2.5
V
STTH6002C
Fig. 1: Peak current versus duty cycle (per diode).
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
IM(A)
IFM(A)
250
100
225
90
IM
200
T
80
175
δ=tp/T
70
tp
Tj=150°C
60
150
Tj=25°C
50
P = 20W
125
40
100
P = 30W
75
30
P = 15W
20
50
10
25
δ
0
VFM(V)
0
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.0
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
IFM(A)
1.0
100
90
80
70
Tj=150°C
60
Single pulse
Tj=25°C
50
40
30
20
10
tp(s)
VFM(V)
0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
Qrr(nC)
C(pF)
250
1000
IF=30A
VR=160V
F=1MHz
VOSC=30mVRMS
Tj=25°C
200
Tj=125°C
150
100
100
Tj=25°C
50
VR(V)
dIF/dt(A/µs)
10
0
0
50
100
150
200
10
100
1000
3/5
STTH6002C
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
trr(ns)
IRM(A)
80
14
IF=30A
VR=160V
70
IF=30A
VR=160V
12
60
Tj=125°C
10
Tj=125°C
50
8
40
6
30
Tj=25°C
4
20
Tj=25°C
2
10
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
10
100
1000
Fig. 8: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C]
1.4
IF=30A
VR=160V
1.2
1.0
IRM
0.8
Qrr
0.6
0.4
0.2
Tj(°C)
0.0
25
4/5
50
75
100
125
150
10
100
1000
STTH6002C
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
REF.
V
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
E
=
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
4.85
2.20
0.40
1.00
5.15
2.60
0.80
1.40
0.191
0.086
0.015
0.039
3.00
2.00
2.00
3.00
0.203
0.102
0.031
0.055
0.118
0.078
2.40 0.078
3.40 0.118
10.90
15.45
19.85
3.70
0.094
0.133
0.429
15.75 0.608
20.15 0.781
4.30 0.145
18.50
14.20
0.620
0.793
0.169
0.728
14.80 0.559
34.60
5.50
2.00
0.582
1.362
0.216
3.00 0.078
5°
60°
0.118
5°
60°
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH6002CW
STTH6002CW
TO-247
4.46 g
30
Tube
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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