STTH806DTI ® Tandem 600V HYPERFAST BOOST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 600 V Tj 150°C VF (typ) 2.24 V IRM typ.) 4A trr (max) 13 ns 1 2 1 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions Designed for high dI/dt operation. Hyperfast recovery current to compete with SIC devices. Allows downsizing of mosfet and heatsinks Internal ceramic insulated devices with equal thermal conditions for both 300V diodes Insulation (2500VRMS) allows placement on same heatsink as MOSFET and flexible heatsinking on common or separate heatsink Static and dynamic equilibrium of internal diodes are warranted by design Package capacitance: C=7pF 2 Insulated TO-220AC DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 600 V RMS forward voltage 14 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 180 A Ipeak Peak current waveform δ = 0.15 Tc = 130°C 17 A -65 to + 150 °C + 150 °C Tstg Tj Storage temperature range Maximum operating junction temperature Order Codes Part Number STTH806DTI June 2005 Marking STTH806DTI REV. 4 1/6 STTH806DTI THERMAL RESISTANCE Symbol Rth(j-c) Parameter Value (max). Unit 2.6 °C/W Junction to case STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Forward voltage drop Tj = 25°C 15 IF = 8A Max. Unit 10 µA 100 3.6 Tj = 150°C Pulse test: Typ 1.95 V 2.4 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF (RMS) DYNAMIC CHARACTERISTICS Symbol Parameter Test conditions trr Reverse recovery time Tj = 25°C IRM Reverse recovery current Tj = 125°C IF = 8A VR = 400V dIF/dt = -200 A/µs S Reverse recovery softness factor 0.4 - Qrr Reverse recovery charges 50 nC IF = 0.5A Irr = 0.25A IR =1A Min. Typ Max. Unit 13 IF = 1A dIF/dt = -50 A/µs VR =30V ns 30 4 5.5 A TURN-ON SWITCHING CHARACTERISTICS Symbol Parameter tfr Forward recovery time Tj = 25°C IF = 8A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25°C IF = 8A 2/6 Test conditions dIF/dt = 100 A/µs Min. Typ Max. Unit 200 ns 7 V ® STTH806DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. P(W) IFM(A) 30 δ = 0.1 δ = 0.05 25 δ = 0.2 100 δ = 0.5 Tj=125°C (maximum values) δ=1 20 Tj=125°C (typical values) 15 Tj=25°C (maximum values) 10 10 T 5 δ=tp/T IF(AV)(A) tp VFM(V) 0 1 0 1 2 3 4 5 6 7 8 9 0 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 1 2 3 4 5 6 7 8 Fig. 4: Peak reverse recovery current versus dI F /dt (typical values). IRM(A) Zth(j-c)/Rth(j-c) 9 1.0 VR=400V Tj=125°C 8 IF=2 x IF(AV) 7 0.8 IF=IF(AV) 6 IF=0.5 x IF(AV) δ = 0.5 0.6 5 4 0.4 δ = 0.2 3 δ = 0.1 T 0.2 2 Single pulse tp(s) δ=tp/T 0.0 1E-3 1E-2 1 tp 1E-1 dIF/dt(A/µs) 1E+0 0 0 Fig. 5: Reverse recovery time versus dIF/dt (typical values). 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (typical values). trr(ns) Qrr(nC) 140 60 VR=400V Tj=125°C VR=400V Tj=125°C 50 100 IF=2 x IF(AV) 40 IF=2 x IF(AV) 120 IF=IF(AV) IF=IF(AV) 80 IF=0.5 x IF(AV) 30 IF=0.5 x IF(AV) 60 20 40 10 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 ® 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 3/6 STTH806DTI Fig. 7: Softness factor versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj= 125°C). 2.6 S 2.2 IF<2xIF(AV) VR=400V Tj=125°C 0.5 IF=IF(AV) VR=400V Reference: Tj=125°C 2.4 0.6 2.0 1.8 S 1.6 0.4 1.4 1.2 0.3 1.0 IRM 0.8 0.2 0.6 0.4 0.1 Tj(°C) 0.2 dIF/dt(A/µs) 0.0 0.0 0 50 100 150 200 250 300 350 400 450 500 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). 25 50 75 100 125 Fig. 10: Forward recovery time versus dIF/dt (typical values). VFP(V) tfr(ns) 200 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 140 120 100 80 60 40 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 4/6 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 ® STTH806DTI PACKAGE MECHANICAL DATA Insulted TO-220AC REF. H2 A A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 10.00 10.40 0.393 0.409 16.40 typ. 0.645 typ. 13.00 14.00 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 ORDERING INFORMATION Ordering type STTH806DTI ■ ■ ■ ■ Marking STTH806DTI Package Weight Base qty Delivery mode Insulated TO-220AC 1.90 g 50 Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 m.N. Maximum torque value: 0.70 m.N. Date Revision Changes Oct-2003 2A Initial release May-2004 3 Reformatted 29-Jun-2005 4 Corrections to typographical errors. No technical changes. ® 5/6 STTH806DTI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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