STW40NS15 N-CHANNEL 150V - 0.042Ω - 40A TO-247 MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STW40NS15 ■ ■ ■ ■ VDSS RDS(on) ID 150 V <0.052Ω 40A TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 150 V Drain-gate Voltage (RGS = 20 kΩ) 150 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 40 A ID Drain Current (continuos) at TC = 100°C 25 A Drain Current (pulsed) 160 A VDS VDGR VGS IDM (1) PTOT Parameter Total Dissipation at TC = 25°C Derating Factor dv/dt Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature 180 W 0.933 W/°C 9 V/ns –65 to 175 °C 175 °C (•)Pulse width limited by safe operating area October 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STW40NS15 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.83 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 40 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 500 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 150 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 40 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.044 0.052 Ω 40 A DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 20A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 20 S 2400 pF Ciss Input Capacitance Coss Output Capacitance 380 pF Crss Reverse Transfer Capacitance 160 pF STW40NS15 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. Typ. Max. Unit VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 25 ns 45 ns VDD = 120V, ID = 40A, VGS = 10V 100 Qg Total Gate Charge 110 nC Qgs Gate-Source Charge 17 nC Qgd Gate-Drain Charge 47 nC SWITCHING OFF Symbol td(off) Tf tr(Voff) Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Test Conditions Min. Typ. Max. Unit VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 85 Vclamp = 120V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 47 ns tf Fall Time 35 ns tc Cross-over Time 70 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD = 40A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 40A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM 270 ns Reverse Recovery Charge 200 nC Reverse Recovery Current 1.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STW40NS15 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STW40NS15 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 5/6 STW40NS15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6