STQ1NC60 N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMesh II MOSFET PRELIMINARY DATA n n n n n n TYPE VDSS RDS(on) ID STQ1NC60 600 V < 15 Ω 0.38 A TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “-AP” FOR ORDERING IN AMMOPAK DESCRIPTION Using the latest high voltage MESH OVERLAYII process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. TO-92 TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPIES (SMPS) n BATTERY CHARGER n ABSOLUTE MAXIMUM RATINGS Symbol VDS Parameter Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 0.38 A ID Drain Current (continuos) at TC = 100°C 0.24 A Drain Current (pulsed) 1.52 A Total Dissipation at TC = 25°C 3.1 W 0.028 W/°C VDGR VGS IDM (l ) PTOT Derating Factor dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area April 2002 3 V/ns –65 to 150 °C 150 °C (1)ISD ≤ 0.3 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/7 STQ1NC60 THERMAL DATA TO-92 Rthj-amb Rthj-lead Tl 120 °C/W Thermal Resistance Junction-lead Max 40 °C/W Maximum Lead Temperature For Soldering Purpose 260 °C Thermal Resistance Junction-ambient Max AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 0.3 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 60 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA 600 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.3 A Min. Typ. Max. Unit 2 3 4 V 12 15 Ω Typ. Max. Unit DYNAMIC Symbol 2/7 Parameter Test Conditions Min. g fs Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 0.3 A 0.87 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 108 pF Coss Output Capacitance 18 pF Crss Reverse Transfer Capacitance 2.5 pF STQ1NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 300V, I D = 0.5 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 7.2 ns 8 ns VDD = 480V, I D = 1 A, VGS = 10V, R G = 4.7Ω 7.3 10 nC 3.4 nC 2.5 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480 V, I D = 1 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 33 ns 11 ns 43 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 0.3 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 1 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 0.3 A 1.2 A 1.6 V 450 ns 720 µC 3.2 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 STQ1NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STQ1NC60 TO-92 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 E 0.500 1.27 F 0.4 G 0.35 0.050 0.51 0.016 0.020 0.14 5/7 STQ1NC60 6/7 STQ1NC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7