STB30NE06L N-CHANNEL 60V - 0.35 Ω - 30A D2PAK STripFET POWER MOSFET TYPE STB30NE06L ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (suffix“T4”) DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 30 A ID Drain Current (continuos) at TC = 100°C 21 A V DS V DGR VGS IDM(•) Drain Current (pulsed) 120 A Ptot Total Dissipation at TC = 25°C Derating Factor 80 W Tstg Storage Temperature Tj Max. Operating Junction Temperature 0.53 W/°C –60 to 175 °C 175 °C ( •)Pulse width limited by safe operating area. November 2000 1/6 STB30NE06L THERMAL DATA Max 1.875 °C/W Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-sink Typ 0.5 °C/W 300 °C Max Value Unit R thj-case Thermal Resistance Junction-case R thj-amb Rthc-sink Tj Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 20 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 25 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA I DS(on) Static Drain-source On Resistance VGS = 5V VGS = 10V ID = 15 A I D = 15 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. Typ. Max. Unit 1 1.75 2.5 V 0.045 0.035 0.06 0.05 Ω Ω 30 A DYNAMIC Symbol Test Conditions Min. Typ. Forward Transconductance VDS > ID(on) x RDS(on)max, ID=15 A 10 18 S C iss Input Capacitance VDS = 25V f = 1 MHz VGS = 0 1350 pF Coss Output Capacitance 195 pF Crss Reverse Transfer Capacitances 58 pF gfs 2/6 (1) Parameter Max. Unit STB30NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Parameter Test Conditions Min. Turn-on Delay Time Rise Time VDD = 30 V ID = 15 A RG = 4.7 Ω VGS = 4.5 V (see test circuit, Figure 3) VDD=48 V Typ. Max. 25 105 Unit ns ns Qg Total Gate Charge Qgs Gate-Source Charge 8 nC Q gd Gate-Drain Charge 10 nC ID=30 A VGS=5 V 20 28 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 30 V ID = 15 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, see fig.3) 50 20 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 48 V ID = 30 A RG = 4.7 Ω VGS = 4.5 V (Inductive Load, see fig.5) 15 40 60 ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 30 A ISDM (•) Source-drain Current (pulsed) 120 A VSD (*) Forward On Voltage ISD = 30 A 1.5 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A di/dt = 100 A/µs VDD = 30V Tj = 150 °C (see test circuit, Figure 3) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. VGS = 0 80 0.18 4.5 ns µC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limit ed by safe operating area. 3/6 STB30NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STB30NE06L D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 8º 5/6 STB30NE06L Information furnished is believed to be accurate and reliable. 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