STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW7NC90Z ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. TO-247 APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (● ) PTOT IGS VESD(G-S) dv/dt(1) Tstg Tj Value Unit Drain-source Voltage (VGS = 0) Parameter 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ±25 V Drain Current (continuos) at TC = 25°C 6 A Drain Current (continuos) at TC = 100°C 3.8 A Drain Current (pulsed) 24 A Total Dissipation at TC = 25°C 160 W Derating Factor 1.28 W/°C Gate-source Current (DC) ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 3 KV Peak Diode Recovery voltage slope 3 V/ns –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. May 2001 (*) Limited by maximum temperature allowed 1/8 STW7NC90Z THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl 0.78 °C/W 30 °C/W 300 °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 6 A 315 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient Test Conditions ID = 250 µA, VGS = 0 Min. Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Max. 900 ID = 1 mA, VGS = 0 IDSS Typ. Unit V 1 V/°C 1 µA VDS = Max Rating, TC = 125 °C 50 µA VGS = ±20V ±10 µA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3A Min. Typ. Max. Unit 3 4 5 V 1.55 1.9 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID =3A VDS = 25V, f = 1 MHz, VGS = 0 Min. 5.7 S 2290 pF Ciss Input Capacitance Coss Output Capacitance 150 pF Crss Reverse Transfer Capacitance 15 pF STW7NC90Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 450V, ID = 3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 720V, ID = 6 A, VGS = 10V Typ. Max. Unit 30 ns 12 ns 42 58.8 nC 13 nC 15 nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 720V, ID = 6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 10 ns 11 ns 14 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 6 A, di/dt = 100A/µs, VDD = 40 V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 6 A 24 A 1.6 V 680 ns 7.14 µC 21 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance IGS = 50 mA 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW7NC90Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/8 Static Drain-source On Resistance STW7NC90Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW7NC90Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW7NC90Z TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 0.19 TYP. MAX. A 4.85 5.15 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/8 STW7NC90Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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