STMICROELECTRONICS STW9NA80

STW9NA80
STH9NA80FI

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
STW 9NA80
STH9NA80FI
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
800 V
< 1.0 Ω
< 1.0 Ω
9.1 A
5.9 A
TYPICAL RDS(on) = 0.85 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
3
3
2
2
1
1
TO-247
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
ST W9NA80
V DS
V DGR
V GS
Un it
STH9NA80F I
Drain-source Voltage (V GS = 0)
800
V
Drain- gate Voltage (R GS = 20 kΩ)
800
V
± 30
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
9.1
5.9
A
ID
Drain Current (continuous) at Tc = 100 oC
6
3.9
A
36.4
36.4
A
T otal Dissipation at Tc = 25 C
190
80
W
Derating Factor
1.52
0.64
W /o C

4000
I DM (•)
P tot
V ISO
Ts tg
Tj
Drain Current (pulsed)
o
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
November 1998
1/10
STW9NA80-STH9NA80FI
THERMAL DATA
R thj -case
Thermal Resistance Junction-case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
ISOW AT T218
0.65
1.56
Max
30
0.1
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Max Valu e
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
9.1
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 50 V)
415
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
T yp.
Max.
800
V GS = 0
V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (VDS = 0)
Min.
Unit
V
o
T c = 100 C
V GS = ± 30 V
50
500
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS(on)
Static Drain-source O n V GS = 10V
Resistance
I D(o n)
V DS = V GS
Min.
T yp.
Max.
Unit
2.25
3
3.75
V
0.85
1
Ω
ID = 4.5 A
9.1
On State Drain Current V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/10
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 4.5A
V GS = 0
Min.
T yp.
7.5
10
2900
290
80
Max.
Unit
S
3800
380
105
pF
pF
pF
STW9NA80-STH9NA80FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 400 V ID = 4.5 A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
ID = 9 A
Min.
V GS = 10 V
T yp.
Max.
Unit
37
45
50
60
ns
ns
115
15
55
150
nC
nC
nC
T yp.
Max.
Unit
45
15
70
60
20
91
ns
ns
ns
T yp.
Max.
Unit
9.1
36.4
A
A
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
V DD = 640 V ID = 9 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 9.1 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 9 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 5)
VGS = 0
1.6
V
765
ns
113.4
µC
35
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
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STW9NA80-STH9NA80FI
Thermal Impedance for TO-247
Thermal Impedance for ISOWATT218
Derating Curve for TO-247
Derating Curve for ISOWATT218
Output Characteristics
Transfer Characteristics
4/10
STW9NA80-STH9NA80FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
STW9NA80-STH9NA80FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STW9NA80-STH9NA80FI
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
STW9NA80-STH9NA80FI
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
8/10
STW9NA80-STH9NA80FI
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
5.35
TYP.
5.65
0.210
TYP.
MAX.
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1
2
3
L1
L4
P025C
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STW9NA80-STH9NA80FI
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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