STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW 9NA80 STH9NA80FI ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V 800 V < 1.0 Ω < 1.0 Ω 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 3 2 2 1 1 TO-247 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W9NA80 V DS V DGR V GS Un it STH9NA80F I Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 9.1 5.9 A ID Drain Current (continuous) at Tc = 100 oC 6 3.9 A 36.4 36.4 A T otal Dissipation at Tc = 25 C 190 80 W Derating Factor 1.52 0.64 W /o C 4000 I DM (•) P tot V ISO Ts tg Tj Drain Current (pulsed) o Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area November 1998 1/10 STW9NA80-STH9NA80FI THERMAL DATA R thj -case Thermal Resistance Junction-case R thj -amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-247 ISOW AT T218 0.65 1.56 Max 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Valu e Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 9.1 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) 415 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA T yp. Max. 800 V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) Min. Unit V o T c = 100 C V GS = ± 30 V 50 500 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 2.25 3 3.75 V 0.85 1 Ω ID = 4.5 A 9.1 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/10 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 4.5A V GS = 0 Min. T yp. 7.5 10 2900 290 80 Max. Unit S 3800 380 105 pF pF pF STW9NA80-STH9NA80FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on Time Rise Time V DD = 400 V ID = 4.5 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V ID = 9 A Min. V GS = 10 V T yp. Max. Unit 37 45 50 60 ns ns 115 15 55 150 nC nC nC T yp. Max. Unit 45 15 70 60 20 91 ns ns ns T yp. Max. Unit 9.1 36.4 A A SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. V DD = 640 V ID = 9 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 9.1 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) VGS = 0 1.6 V 765 ns 113.4 µC 35 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/10 STW9NA80-STH9NA80FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Derating Curve for TO-247 Derating Curve for ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW9NA80-STH9NA80FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STW9NA80-STH9NA80FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW9NA80-STH9NA80FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW9NA80-STH9NA80FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 8/10 STW9NA80-STH9NA80FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 9/10 STW9NA80-STH9NA80FI Information furnished is believed to be accurate and reliable. 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