TD350 Advanced IGBT/MOSFET Driver ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.75A source/1.2A sink min gate drive Active Miller clamp feature Two steps turn-off with adjustable level and delay Desaturation detection Fault status output Negative gate drive ability Input compatible with pulse transformer or optocoupler Separate sink and source outputs for easy gate drive UVLO protection 2kV ESD protection Applications ■ ■ ■ 1200V 3-Phase Inverter Motor Control UPS Systems D SO-14 (Plastic MicroPackage) Description TD350 is an advanced gate driver for IGBT and power MOSFET. Control and protection functions are included and allow the design of high reliability systems. Pin Connections (top view) Innovative active Miller clamp function avoids the need of negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver TD350 includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit condition. Same delay is applied at turn-on to prevent pulse width distortion. TD350 also includes an IGBT desaturation protection and a FAULT status output. IN 1 14 DESAT VREF 2 13 VH FAULT 3 12 OUTH NC 4 11 OUTL COFF 5 10 VL NC 6 9 CLAMP 7 8 GND LVOFF TD350 TD350 is compatible with both pulse transformer and optocoupler signals. Order Codes Part Number Temperature Range Package Packaging TD350ID TD350IDT -40, +125°C SO Tube Tape & Reel August 2004 Revision 1 1/11 TD350 1 Block Diagram Block Diagram Figure 1: Schematic block diagram Vref UVLO IN Pulse Transformer VREF Vref FAULT NC Vref Off delay COFF NC VH LVOFF 16V VH Optionnal Block Vref OUTH Control VH DESAT Desat VL OUTL CLAMP -10V GND Off Level TD350 Table 1: Pin description Name IN VREF FAULT NC COFF NC LVOFF GND CLAMP VL OUTL OUTH VH DESAT 2/11 Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Type Analog input Analog output Digital output Not connected Timing capacitor Not connected Analog input Power supply Analog output Power supply Analog output Analog output Power supply Analog input Function Input +5V reference voltage Fault status output Turn off delay Turn off level Signal ground Miller clamp Negative supply Gate drive output (sink) Gate drive output (source) Positive supply Desaturation protection Absolute Maximum Ratings 2 TD350 Absolute Maximum Ratings Table 2: Key parameters and their absolute maximum ratings Symbol VHL VH VL Vout Vdes Vter Pd Tstg Tj Rhja Rhjc ESD Parameter Maximum Supply Voltage (VH - VL) Maximum VH voltage vs. GND Minimum VL voltage vs. GND Voltage on OUTH, OUTL, CLAMP pins Voltage on DESAT, FAULT, LVOFF pin Voltage on other pins (IN, COFF, VREF) Power dissipation Storage temperature Maximum Junction Temperature Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Electrostatic discharge Value Unit 28 28 -12 VL-0.3 to VH+0.3 -0.3 to VH+0.3 -0.3 to 7 500 -55 to 150 150 125 22 2 V V V V V V mW °C °C °C/W °C/W kV Value Unit UVLO to 26 0 to -10 26 -40 to 125 V V V °C Table 3: Operating conditions Symbol VH VL VH-VL Toper Parameter Positive Supply Voltage vs. GND Negative Supply Voltage vs. GND Maximum Total Supply Voltage Operating Free Air Temperature Range 3/11 TD350 3 Electrical Characteristics Electrical Characteristics Table 4: Tamb = -20 to 125°C, VH=16V, VL=-10V (unless otherwise specified) Symbol Input Vton Vtoff tonmin Iinp Parameter Test Condition IN turn-on threshold voltage IN turn-off threshold voltage Minimum pulse width IN Input current Min Typ 0.8 1.0 4.0 135 100 Max Unit 4.2 220 1 V V ns µA Voltage reference - note 1 Vref Voltage reference Iref Maximum output current Desaturation protection Vdes Desaturation threshold Ides Source current Fault output tfault Delay for fault detection VFL FAULT low voltage Clamp Vtclamp CLAMP pin voltage threshold VCL Off Delay Vtdel Rdel Off Levels Iblvoff Violv Outputs VOL1 T=25°C Tmin<T<Tmax 5.15 5.22 V V mA 6.5 7.2 250 7.9 V µA 500 1 ns V VL+2.5 VL+3.0 V V V 2.0 T=25°C Clamp low voltage at Icsink=500mA Tmin<T<Tmax Voltage threshold Discharge resistor I=1mA LVOFF peak input current (sink) Offset voltage LVOFF=12V LVOFF=12V 2.35 2.50 2.65 500 V Ω -0.3 120 -0.15 200 0 µA V VL+0.35 VL+1.0 VL+1.5 VL+2.5 VL+3.0 V V V V V V V V 130 175 ns ns 75 90 ns ns 800 ns Output low voltage at Iosink=20mA Recommended capacitor range on VREF pin is 10nF to 100nF. 4/11 5.00 Ifsink=10mA T=25°C VOL2 Output low voltage at Iosink=200mA Tmin<T<Tmax T=25°C VOL3 Output low voltage at Iosink=500mA Tmin<T<Tmax VOH1 Output high voltage 1 Iosource=20mA VOH2 Output high voltage 2 Iosource=200mA VOH3 Output high voltage 3 Iosource=500mA CL=1nF, 10% to 90% tr Rise time VL=0 VL=-10V CL=1nF, 90% to 10% Fall time tf VL=0 (2 step turn-off disabled) VL=-10V Input to output propagation delay at 10% output change tpd turn-on (2 step delay disabled) ∆tw Input to output pulse distortion 10% output change Under Voltage Lockout (UVLO) UVLOH UVLO top threshold UVLOL UVLO bottom threshold Vhyst UVLO hysteresis UVH-UVL Supply current Iin Quiescent current output=0V, no load 1) 4.85 4.77 10 VH-2.5 VH-3.0 VH-4.0 270 10 60 110 ns 10 9 0.5 11 10 1 12 11 V V V 5 mA Functional Description 4 TD350 Functional Description 4.1 Input 4.5 Two level turn-off The input is compatible with optocouplers or pulse transformers. The input is triggered by the signal edge and allows the use of low-sized, low-cost pulse transformer. Input is active low (output is high when input is low) to ease the use of optocoupler. When driven by a pulse transformer, the input pulse (positive and negative) width must be larger than the minimum pule width tonmin. The two-level turn-off is used to increase the reliability of the application. 4.2 Voltage reference A voltage reference is used to create accurate timing for the two-level turn-off with external resistor and capacitor. 4.3 Desaturation protection Desaturation protection ensures the protection of the IGBT in the event of overcurrent. When the DESAT voltage goes higher that 7V, the output is driven low (with 2-level turn-off if applicable). The FAULT output is activated. The FAULT state is exited at the next falling edge of IN input. A programmable blanking time is used to allow enough time for IGBT saturation. Blanking time is provided by an internal current source and external capacitor. DESAT input can also be used with an external comparator for overcurrent or over temperature detection. 4.4 Active Miller clamp A Miller clamp allows the control of the Miller current during a high dV/dt situation and can avoid the use of a negative supply voltage. During turn-off, the gate voltage is monitored and the clamp output is activated when gate voltage goes below 2V (relative to GND). The clamp voltage is VL+3V max for a Miller current up to 500mA. The clamp is disabled when the IN input is triggered again. During turn-off, gate voltage can be reduced to a programmable level in order to reduce the IGBT current (in the event of over-current). This action avoids both dangerous overvoltage across the IGBT, and RBSOA problems, especially at short circuit turn-off. Turn-off (Ta) delay is programmable through an external resistor and capacitor for accurate timing. Turn-off delay (Ta) is also used to delay the input signal to prevent distortion of input pulse width. 4.6 Minimum ON time In order to ensure the proper operation of the 2level turn-off function, the input ON time (Twin) must be greater than the Twinmin value: Twinmin=Ta+2*Rdel*Coff Rdel is the internal discharge resistor and Coff is the external timing capacitor. Input signals smaller than Ta are ignored. Input signals larger than Twinmin are transmitted to the output stage after the Ta delay with minimum width distortion (∆Tw=Twout-Twin). For an input signal width Twin between Ta and Twinmin, the output width Twout is reduced below Twin (pulse distortion) and the IGBT could be partially turned on. These input signals should be avoided during normal operation. 4.7 Output The output stage is able to sink 2.3A and source 1.5A typical at 25°C (1.2A/0.75A minimum over the full temperature range). Separated sink and source outputs allow independent gate charge and discharge control without an extra external diode. 5/11 TD350 Functional Description 4.8 Fault status output Fault output is used to signal a fault event (desaturation, UVLO) to a controller. The fault pin is designed to drive an optocoupler. for VH<2V). Fault output signals the undervoltage state and is reset only when undervoltage state disappears. UVH 4.9 Undervoltage protection UVL Vccmin VH Undervoltage detection protects the application in the event of a low VH supply voltage (during startup or a fault situation). During undervoltage, the OUTH pin is open and the OUTL pin is driven low (active pull-down for VH>2V, passive pull-down 2V OUT FAULT Figure 2: Detailed Internal Schematic UVLO Comp_Input IN Delay VREF Vref 1V-4V VH 250uA Comp_Desat DESAT 7.2V Control Block Vref FAULT Comp_DelayOff COFF 2.5V Comp_Clamp S2 2V CLAMP VH OUTH VH OUTL LVOFF 2-level OFF driver VL GND rev. 3 6/11 Timing Diagrams 5 TD350 Timing Diagrams Figure 3: Turn-on and turn-off Twin IN COFF Ta Ta VH level LVOFF OUT Twout VL level Open CLAMP VH level Miller plateau Vge Clamp threshold VL level Vce Figure 4: Minimum ON time Tin<Ta Ta<Tin<Twinmin Tin>Twinmin IN 2.5V COFF Ta Ta Ta VH level LVOFF OUT VL level Open CLAMP Figure 5: Desaturation fault IN 2.5V COFF Ta Ta Ta VH level LVOFF OUT VL level 7V DESAT Desat Blanking Time FAULT open 7/11 TD350 6 Typical Performance Curves Typical Performance Curves Figure 6: Supply current vs temperature Figure 9: Voltage reference vs temperature 5.20 5.0 5.10 3.0 Vref (V) In (mA) 4.0 2.0 5.00 4.90 1.0 0.0 4.80 -50 -25 0 25 50 75 100 125 -50 -25 0 Temp (°C) 25 50 75 100 125 Temp (°C) Figure 7: Low level output voltage vs temp. Figure 10: High level output voltage vs temp. 4.0 3.0 Iosink=500mA 1.0 VH-VOH (V) VOL-VL (V) 3.0 2.0 Iosource=500mA 2.0 Iosource=200mA 1.0 Iosink=200mA Iosource=20mA Iosink=20mA 0.0 0.0 -50 -25 0 25 50 75 100 125 -50 -25 0 Temp (°C) 50 75 100 125 Figure 11: Desaturation source current vs temp. 10 500 9 400 Ides (uA) Vdes (V) Figure 8: Desaturation threshold vs temperature 8 7 300 200 100 6 0 5 -50 8/11 25 Temp (°C) -25 0 25 50 Temp (°C) 75 100 125 -50 -25 0 25 50 Temp (°C) 75 100 125 Application Diagrams 7 TD350 Application Diagrams Figure 12: Single supply IGBT drive with active Miller clamp and 2-level turn-off VH UVLO IN DESAT 5.1V VREF FAULT NC COFF Vref Off delay NC LVOFF VH 16V VH Block Vref OUTH Control Vref Desat VL OUTL CLAMP GND Off Level TD350 Figure 13: Large IGBT drive with negative gate drive and desaturation detection Vref UVLO IN Pulse Transformer VREF Vref FAULT OUTH VL OUTL NC COFF Vref Off delay NC LVOFF VH 16V VH Block Vref Control VH DESAT Desat -10V CLAMP GND Off Level TD350 Figure 14: Use of DESAT input for direct overcurrent detection Vref Vref UVLO IN Pulse Transformer VREF Vref FAULT NC Vref COFF Off delay NC VH LVOFF 16V VH Block Vref OUTH Control VH DESAT Desat VL OUTL CLAMP GND Off Level TD350 9/11 TD350 8 PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA SO-14 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 0.003 0.007 0.46 0.013 0.018 0.25 0.007 1.65 b 0.35 b1 0.19 C MAX. 0.064 0.5 0.010 0.019 c1 45˚ (typ.) D 8.55 8.75 0.336 E 5.8 6.2 0.228 e 1.27 e3 0.344 0.244 0.050 7.62 0.300 F 3.8 4.0 0.149 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.157 0.026 8 ˚ (max.) PO13G 10/11 Revision History 9 TD350 Revision History Date Revision 01 August 2004 1 Description of Changes First Release Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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