FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = 175°C • Positive Temperaure Co-efficient for Easy Parallel Operating Applications • High Current Capability • Automotive chargers, Converters, High Voltage Auxiliaries • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 40 A • Inverters, PFC, UPS • High Input Impedance General Description • Fast Switching: EOFF = 6.25 uJ/A • Tightened Parameter Distribution Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. • RoHS Compliant • Qualified to Automotive Requirements of AEC-Q101 E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) PD Collector Current @ TC = 25oC 80 A Collector Current @ TC = 100oC 40 A o @ TC = 25 C 120 A 25oC 349 W Pulsed Collector Current Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC 174 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Parameter Typ. Thermal Resistance, Junction to Case RθJC(Diode) Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 o C/W 1.45 o C/W 40 1 Unit 0.43 oC/W www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT April 2015 Part Number Top Mark FGH40N60SMDF_F085 FGH40N60SMDF Package Packing Method Reel Size TO-247 Electrical Characteristics of the IGBT Symbol Parameter Tube Tape Width Quantity N/A N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 μA - 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.8 6.0 V IC = 40 A, VGE = 15 V - 1.7 2.5 V IC = 40 A, VGE = 15 V, TC = 150oC - 2.0 - V - 1840 - pF - 180 - pF - 50 - pF 18 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 110 - ns tf Fall Time - 11 20 ns Eon Turn-On Switching Loss - 1.3 - mJ Eoff Turn-Off Switching Loss - 0.25 - mJ Ets Total Switching Loss - 1.55 - mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 25oC td(on) Turn-On Delay Time - 18 - ns tr Rise Time - 32 - ns td(off) Turn-Off Delay Time - 112 - ns tf Fall Time - 11 20 ns Eon Turn-On Switching Loss - 2.05 - mJ Eoff Turn-Off Switching Loss - 0.48 - mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, Inductive Load, TC = 125oC Ets Total Switching Loss - 2.53 - mJ Qg Total Gate Charge - 122 - nC Qge Gate to Emitter Charge - 11 - nC Qgc Gate to Collector Charge - 59 - nC ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 VCE = 400 V, IC = 40 A, VGE = 15 V 2 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions FGH40N60SMDF_F085 Rev 1.0 Typ. Max - 1.3 1.7 150oC - 1.2 TC = 25oC - 57 o TC = 125 C - 130 TC = 25oC - 164 - 718 TC = 25 C IF = 20 A TC = IF =20 A, diF/dt = 200 A/μs ©2015 Fairchild Semiconductor Corporation Min. o TC = 3 125oC 90 290 Unit V ns nC www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o TC = 25 C 20V o TC = 125 C 15V 20V 90 Collector Current, IC [A] Collector Current, IC [A] 12V 10V VGE = 8V 60 30 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 90 15V 12V 10V 60 30 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics Common Emitter VCE = 20V o TC = 25 C 90 Collector Current, IC [A] Collector Current, IC [A] 6.0 80 Common Emitter VGE = 15V o TC = 125 C 60 30 0 1 2 3 Collector-Emitter Voltage, VCE [V] 80A 2.5 2.0 1.0 25 40A IC = 20A 20 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] ©2015 Fairchild Semiconductor Corporation 12 4 Common Emitter o TC = -40 C 16 12 8 40A 4 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] FGH40N60SMDF_F085 Rev 1.0 40 20 Common Emitter VGE = 15V 1.5 o TC = 125 C Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 3.0 o TC = 25 C 60 0 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 120 0 VGE = 8V 80A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 8 80A 4 40A 0 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Capacitance [pF] 80A 4 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Cies 2000 Coes 1000 Cres TC = 25 C 12 9 VCC = 100V 200V 300V 6 3 0 30 Figure 11. SOA Characteristics 0 30 60 90 Gate Charge, Qg [nC] 120 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 100 tr 100μs 10 10μ s Switching Time [ns] 100 1ms 10 ms DC 1 *Notes: Single Nonrepetitive O Pulse T C= 25 C 0.1 td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C Curves must be derated linearly with increase in temperature 0.01 20 o o 10 Collector-Emitter Voltage, VCE [V] 40A Common Emitter TC = 25 C 1 8 15 Common Emitter VGE = 0V, f = 1MHz 0 12 Figure 10. Gate charge Characteristics 4000 3000 TC = 125 C 16 0 20 Figure 9. Capacitance Characteristics Collector Current, Ic [A] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 1 10 100 Collector-Emitter Voltage, V CE [V] ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 o TC = 125 C 1 1000 5 0 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6 Ω td(off) o TC = 25 C tf 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A Switching Time [ns] Switching Time [ns] o 100 100 TC = 125 C tr td(on) 10 o TC = 25 C o 1 TC = 125 C 0 10 20 30 40 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 td(off) Switching Loss [mJ] Switching Time [ns] Eon 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 40A o o TC = 25 C TC = 25 C o o TC = 125 C 1 20 40 TC = 125 C 60 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 20 10 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 200 Common Emitter VGE = 15V, RG = 6Ω 100 o Eon o TC = 125 C Collector Current, IC [A] Switching Loss [mJ] TC = 25 C 1 Eoff 10 Safe Operating Area o 0.1 20 30 40 50 60 70 1 80 Collector Current, IC [A] ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 VGE = 15V, TC = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 100 100 Reverse Currnet, IR [uA] Forward Current, IF [A] o o TJ = 125 C 10 o TJ = 25 C o 1 TJ = 75 C o TC = 25 C o TJ = 125 C 10 o TJ = 75 C 1 o 0.1 TJ = 25 C TC = 125 C o 0.1 0.0 TC = 75 C 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 0.01 50 2.5 Figure 21. Stored Charge 600 80 200A/μs Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 300 450 Reverse Voltage, VR [V] Figure 22. Reverse Recovery Time 200 150 100 di/dt = 100A/μs 50 0 150 di/dt = 100A/μs 60 200A/μs 40 20 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 1E-5 t1 0.02 0.01 single pulse 1E-4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 7 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I74 ©2015 Fairchild Semiconductor Corporation FGH40N60SMDF_F085 Rev 1.0 9 www.fairchildsemi.com FGH40N60SMDF_F085 600 V, 40 A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.