VN770 QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS T YPE VN770 R DS( on) * I OUT V CC 0.240 Ω 9 A 26 V * Total resistance of one side in bridge configuration ■ ■ ■ ■ ■ ■ ■ IDEAL AS A LOW VOLTAGE BRIDGE VERY LOW STAND-BY POWER DISSIPATION OVER-CURRENT PROTECTED STATUS FLAG DIAGNOSTICS ON UPPER SIDE OPEN DRAIN DIAGNOSTICS OUTPUT UNDER-VOLTAGE PROTECTION SUITABLE AS QUAD SWITCH DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shut-down to protect the chip from over temperature and short circuit, status output to provide indication for open load in off and on state, overtemperature conditions and stuck-on to VCC. DUAL HIGH-SIDE SWITCH From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power October 1998 SO-28 MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two Power MOS areas. This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage. In this device if the GND pin is disconnected, with VCC not exceeding 16V, both channel will switch off. Power MOSFETs During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The devices can be used as a switch from DC to very high frequency. 1/10 VN770 BLOCK DIAGRAM 2/10 VN770 CONNECTION DIAGRAM PIN FUNCTION No NAME 1, 3, 25, 28 DRAIN 3 Drain of Switch 3 (low-side switch) 2 INPUT 3 Input of Switch 3 (low-side switch) 4, 11 N.C. Not Connected 5, 10, 19, 24 V CC Drain of Switches 1and 2 (high-side switches) and Power Supply Voltage 6 GND 7 INPUT 1 8 FUNCT ION Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switch) DIAG NO STIC Diagnostic of Switches 1 and 2 (high-side switc hes) 9 INPUT 2 Input of Switch 2 (high-side switch) 12, 14, 15, 18 DRAIN 4 Drain of Switch 4 (low-side switch) 13 INPUT 4 Input of Switch 4 (low-side switch) 16, 17 SO URCE 4 Source of Switch 4 (low-side switch) 20, 21 SO URCE 2 Source of Switch 2 (high-side switch) 22, 23 SO URCE 1 Source of Switch 1 (high-side switch) 26, 27 SO URCE 3 Source of Switch 3 (low-side switch) 3/10 VN770 PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150Ω. In any case the maximum voltage drop on this resistor should not overcome 0.5V. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to the device ground (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. TRUTH TABLE (for Dual high-side switch only) INPUT 1 INPUT 2 Normal Operation L H L H L H H L L H L H L H H L H H H H Under-voltage X X L L H Channel 1 Channel 2 Channel 1 H X L X L X H X L L H L X L H L X L L L Channel 2 X L H L X L H L L L Channel 1 H L X L H H X L L L Channel 2 X L H L X L H H L L T hermal Shutdown O pen Load O utput Shorted to V CC SO URCE 1 SOURCE 2 DIAG NO STIC NOTE: The low-side switches have the fault feedback which can be detected by monitoring the voltage at the input pins. L = Logic LOW, H = Logic HIGH, X = Don’t care ABSOLUTE MAXIMUM RATING (-40 oC < Tj < 150 oC) HIGH SIDE SWITCH Symb ol Value Unit Drain-Source Brekdown Voltage 40 V Output Current (continuous) 9 A IR Reverse O utput Current -9 A I IN Input Current ±10 mA -4 V ±10 mA 2000 V V (BR)DSS I OUT Parameter -V CC Reverse Supply Current I STAT Status Current V ESD Electrostatic Discharge (C = 100 pF, R = 1.5 KΩ) P tot Tj T s tg 4/10 o Power Dissipation @ Tc = 25 C Junction Operating Temperature Storage Temperature Internally Limited W -40 to 150 o C -55 to 150 o C VN770 LOW SIDE SWITCH Symbol V DS V DGR V GS Parameter Value Uni t Drain-Source Voltage (V GS = 0) 60 V Drain-Gate Voltage (R GS = 20 KΩ) 60 V ±20 V Gate-Source Voltage o ID Drain Current (continuous) @ T C = 25 C 36 A ID o 24 A 144 A 7 V/ ns I DM(*) dv/dt (1) T s tg Tj Drain Current (continuous) @ T C = 100 C Drain Current (pulsed) Peak Diode Recovery Voltage Slope St orage Temperature Junction Operating T emperature -55 to 150 o C -40 to 150 o C THERMAL DATA R t hj-ca se R t hj-ca se R t hj-amb Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient Max Max Max o 20 20 60 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol V CC In(*) Ro n IS V DS(MAX) Parameter Test Co nditio ns Supply Voltage Nominal Current On State Resistance Supply Current Tc = 85 C V DS(o n) ≤ 0.5 VCC = 13 V o IOUT = I n VCC = 13 V Tj = 25 C o Of f State Tj = 25 C Maximum Voltage Drop IOUT = 7.5 A V o Tj = 85 C Typ . Max. Unit 6 13 26 V 1.6 2.6 A 0.13 0.2 Ω 100 µA 2.3 V VCC = 13 V VCC = 13 o Tj = 25 C 35 1.44 5 10 20 KΩ Min. Typ . Max. Unit Turn-on Delay Time Of R out = 5.4 Ω Output Current 5 25 200 µs R out = 5.4 Ω 10 50 180 µs Turn-off Delay Time Of R out = 5.4 Ω Output Current 10 75 250 µs Fall Time O f Output Current R out = 5.4 Ω 10 35 180 µs (di/dt) on Turn-on Current Slope R out = 5.4 Ω 0.003 0.1 A/µs (di/dt) off Turn-off Current Slope R out = 5.4 Ω 0.005 0.1 A/µs Ri Output to G ND internal Im pedance o Min. SWITCHING Symbol t d(on)(^) t r (^) t d(o ff)(^) t f (^) Parameter Rise Time Of O utput Current Test Co nditio ns 5/10 VN770 ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) LOGIC INPUT Symbol Parameter Test Co nditio ns Min. Max. Unit 1.5 V (•) V 0.9 1.5 V 30 100 µA 5 6 -0.7 7 V V Min. Typ . Max. Unit 0.4 V VI L Input Low Level Voltage V IH Input High Level Voltage 3.5 V I(hys t.) Input Hysteresis Voltage 0.2 II N V ICL o Input Current VI N = 5 V Tj = 25 C Input Clamp Voltage IIN = 10 mA IIN = -10 mA Typ . PROTECTION AND DIAGNOSTICS Symbol Parameter Test Co nditio ns V STAT St atus Voltage Output Low VUSD Under Voltage Shut Down V SCL St atus Clamp Voltage T TSD Thermal Shut-down Temperature T SD( hys t.) Thermal Shut-down Hysteresis TR Reset Temperature V OL Open Voltage Level Of f-State (note 2) IOL Open Load Current Level On-State t povl St atus Delay (note 3) t pol St atus Delay (note 3) IST AT = 1.6 mA IST AT = 10 mA IST AT = -10 mA 3.5 4.5 6 V 5 6 -0.7 7 V V 140 160 180 o C 50 o C o C 125 2.5 4 5 V 180 mA 5 10 µs 500 2500 µs 5 50 (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) (^) See switching time waveform () The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL(off) = (VCC -VOL)/ROL note 3: tpovl tpol: ISO definition 6/10 VN770 ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (Tcase = 25 specified) o C unless otherwise OFF Symbol V (BRDSS) Parameter Drain-source Brekdown Voltage Test Co nditio ns ID = 250 µA Min. Typ . Max. 60 V GS = 0 I DSS VDS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) VDS = Max Rating, TC = 125 o C I GSS Gate-Body Leakage Current (V DS = 0) Unit V VGS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit 2.5 V 0.04 Ω ON (∗) Symbol Parameter Test Co nditio ns Min. 1.0 V GS(th) Gate Threshold Voltage VDS = V GS I D = 250 µA R DS(on) St atic Drain-Source On Resistance VGS = 10 V I D = 18 A On State Drain Current (V DS = 0) VDS > I D(on ) x R DS(o n)max VGS = 10 V I D( on) Typ . 0.032 36 A DYNAMIC Symbol g fs (∗) C iss C os s C rs s Parameter Test Co nditio ns Forward Transconductance VDS > I D(on ) x R DS(o n)max I D = 18A Input Capacitance Output Capacitance Reverse T ransfer Capacitance VDS = 25 V V GS = 0 f = 1 MHz Min. Typ . Max. 7 Unit S 2115 260 65 2800 350 90 pF pF pF SWITCHING-ON (**) Symbol t d(o n) tr (di/dt) on Qg Q gs Q gd Typ . Max. Unit Turn-on Time Rise Time Parameter VDD = 30 V R G = 4.7 Ω Test Co nditio ns I D = 18 A V GS = 10 V Min. 28 85 40 115 ns ns Turn-on Current Slope VDD = 48 V R G = 47 Ω I D = 36 A V GS = 10 V 250 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V VGS = 10 V I D = 36 A 50 13 18 70 nC nC nC Typ . Max. Unit 12 25 40 16 35 55 ns ns ns A/µs SWITCHING-OFF Symbol t r(Vof f) tr tc Parameter Of f-Voltage Rise Time Fall Time Cross-Over Time Test Co nditio ns VDD = 48 V R G = 4.7 Ω I D = 36 A V GS = 10 V Min. 7/10 VN770 SOURCE-DRAIN DIODE Symbol I SD ISDM (∗∗) V SD (∗) tr r Qr r I RRM Parameter Test Co nditio ns Forward On Voltage ISD = 36 A VGS =0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 36 A, Vr = 30 V di/dt = 100 A/µs Tj = 150 o C (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Pulse width limited by Safe Operating Area. TYPICAL APPLICATION DIAGRAM 8/10 Min. Typ . Source-Drain Current Source-Drain Current (pulsed) Max. Unit 36 144 A A 1.5 V 75 ns 245 nC 6.5 A VN770 SO-28 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 2.65 MAX. 0.104 a1 0.10 0.30 0.004 0.012 b 0.35 0.49 0.013 0.019 b1 0.23 0.32 0.009 0.012 C 0.50 0.020 c1 45 (typ.) D 17.7 18.1 0.697 0.713 E 10.00 10.65 0.393 0.419 e 1.27 0.050 e3 16.51 0.650 F 7.40 7.60 0.291 0.299 L 0.40 1.27 0.016 0.050 S 8 (max.) 0016572 9/10 VN770 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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