STMICROELECTRONICS VN770P

VN770P

QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
T YPE
R DS( on) *
I OUT
V CC
VN770P
0.270 Ω
9 A
26 V
* Total resistance of one side in bridge configuration
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■
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IDEAL AS A LOW VOLTAGE BRIDGE
LINEAR CURRENT LIMITATION
VERY LOW STAND-BY POWER
DISSIPATION
SHORT CIRCUIT PROTECTED
STATUS FLAG DIAGNOSTICS
OPEN DRAIN DIAGNOSTICS OUTPUT
INTEGRATED CLAMPING CIRCUITS
UNDER-VOLTAGE PROTECTION
ESD PROTECTION
DESCRIPTION
The VN770P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in a bridge configuration as well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to VCC. The low side switches are
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower technology). They have
built-in thermal shut-down, linear current limitation
and overvoltage clamping. Fault feedback for
thermal intervention can be detected by
monitoring the voltage at the input pin.
DUAL HIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
September 1998
SO-28
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (Vdemag)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
In this device if the GND pin is disconnected, with
VCC not exceeding 16V, both channel will switch
off.
LOW-SIDE SWITCHES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
1/11
VN770P
BLOCK DIAGRAM
2/11
VN770P
CONNECTION DIAGRAM
PIN FUNCTION
No
NAME
1, 3, 25, 28
DRAIN 3
Drain of Switch 3 (low-side switch)
2
INPUT 3
Input of Switch 3 (low-side switch)
4, 11
N.C.
Not Connected
5, 10, 19, 24
V CC
Drain of Switches 1and 2 (high-side switches) and Power Supply Voltage
6
GND
7
INPUT 1
8
FUNCT ION
Ground of Switches 1 and 2 (high-side switches)
Input of Switch 1 (high-side switch)
DIAG NO STIC Diagnostic of Switches 1 and 2 (high-side switc hes)
9
INPUT 2
Input of Switch 2 (high-side switch)
12, 14, 15, 18
DRAIN 4
Drain of Switch 4 (low-side switch)
13
INPUT 4
Input of Switch 4 (low-side switch)
16, 17
SO URCE 4
Source of Switch 4 (low-side switch)
20, 21
SO URCE 2
Source of Switch 2 (high-side switch)
22, 23
SO URCE 1
Source of Switch 1 (high-side switch)
26, 27
SO URCE 3
Source of Switch 3 (low-side switch)
3/11
VN770P
PROTECTION CIRCUITS
DUAL HIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a small resistor between pin 2 (GND) and
ground. The suggested resistance value is about
150Ω. In any case the maximum voltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of Vih, Vil and
Vstat.
LOW SIDE SWITCHES
The devices integrate:
- OVERVOLTAGE
CLAMP
PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R DS(on)).
TRUTH TABLE (for Dual high-side switch only)
INPUT 1
INPUT 2
Normal Operation
L
H
L
H
L
H
H
L
L
H
L
H
L
H
H
L
H
H
H
H
Under-voltage
X
X
L
L
H
T hermal Shutdown
O pen Load
O utput Shorted to V CC
SO URCE 1 SOURCE 2 DIAG NO STIC
Channel 1
Channel 2
Channel 1
H
X
L
X
L
X
H
X
L
L
H
L
X
L
H
L
X
L
L
L
Channel 2
X
L
H
L
X
L
H
L
L
L
Channel 1
H
L
X
L
H
H
X
L
L
L
Channel 2
X
L
H
L
X
L
H
H
L
L
NOTE: The low-side switches have the fault feedback which can be detected by monitoring the voltage at the input pins.
L = Logic LOW, H = Logic HIGH, X = Don’t care
4/11
VN770P
ABSOLUTE MAXIMUM RATING (-40 oC < Tj < 150 oC)
HIGH SIDE SWITCH
Symbol
Value
Uni t
Drain-Source Breakdown Voltage
40
V
Output Current (cont. )
9
A
IR
Reverse O utput Current
-9
A
II N
Input Current
±10
mA
-4
V
±10
mA
2000
V
V (BR)DSS
I OUT
Parameter
-V CC
Reverse Supply Voltage
I STAT
St atus Current
V ESD
Electrostatic Discharge (C = 100 pF , R =1.5 KΩ)
o
P tot
Power Dissipation at T c = 25 C
Internally Limited
Tj
Junction Operating T emperature
-40 to 150
o
C
-55 to 150
o
C
T s tg
St orage Temperature
W
LOW SIDE SWITCH
Symbo l
V (BR)DSS
Parameter
Drain-Source Breakdown Voltage
Value
Unit
Internally Clamped
V
V IN
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-14
A
2000
V
V ESD
P t ot
Tj
T stg
Elect rostatic Discharge (C = 100 pF , R =1.5 KΩ)
o
Total Dissipation at T c = 25 C
Operating Junct ion T emperature
Internally Limited
W
Internally Limited
o
C
-55 to 150
o
C
Storage T emperature
THERMAL DATA
R t hj-ca se
R t hj-ca se
R t hj-amb
Thermal Resistance Junction-case (High-side switch)
Thermal Resistance Junction-case (Low-side switch)
Thermal Resistance Junction-ambient
Max
Max
Max
o
20
20
60
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
V CC
In(*)
Ro n
IS
V DS(MAX)
Parameter
Test Co nditio ns
Supply Voltage
Nominal Current
Tc = 85 C V DS(o n) ≤ 0.5 VCC = 13 V
o
On State Resistance
IOUT = I n VCC = 13 V
Supply Current
Of f State
Maximum Voltage Drop IOUT = 7.5 A
V
o
Tj = 25 C
Tj = 25 o C
o
Tj = 85 C
Min.
Typ .
Max.
Unit
6
13
26
V
2.6
A
1.6
0.13
VCC = 13 V
VCC = 13
35
1.44
0.2
Ω
100
µA
2.3
V
5/11
VN770P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
Ri
Output to G ND internal
Im pedance
o
Tj = 25 C
5
10
20
KΩ
Min.
Typ .
Max.
Unit
Turn-on Delay Time Of R out = 5.4 Ω
Output Current
5
25
200
µs
R out = 5.4 Ω
10
50
180
µs
Turn-off Delay Time Of R out = 5.4 Ω
Output Current
10
75
250
µs
Fall Time O f Output
Current
R out = 5.4 Ω
10
35
180
µs
(di/dt) on
Turn-on Current Slope
R out = 5.4 Ω
0.003
0.1
A/µs
(di/dt) off
Turn-off Current Slope
R out = 5.4 Ω
0.005
0.1
A/ µs
Max.
Unit
1.5
V
(•)
V
0.9
1.5
V
30
100
µA
5
6
-0.7
7
V
V
Min.
Typ .
Max.
Unit
0.4
V
SWITCHING
Symbol
t d(on)(^)
t r (^)
t d(o ff)(^)
t f (^)
Parameter
Rise Time Of O utput
Current
Test Co nditio ns
LOGIC INPUT
Symbol
Parameter
Test Co nditio ns
Min.
VI L
Input Low Level
Voltage
V IH
Input High Level
Voltage
3.5
V I(hys t.)
Input Hysteresis
Voltage
0.2
II N
V ICL
Tj = 25 oC
Input Current
VI N = 5 V
Input Clamp Voltage
IIN = 10 mA
IIN = -10 mA
Typ .
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
V STAT
St atus Voltage Output
Low
VUSD
Under Voltage Shut
Down
V SCL
St atus Clamp Voltage
T TSD
Thermal Shut-down
Temperature
T SD( hys t.)
Thermal Shut-down
Hysteresis
TR
Reset Temperature
V OL
Open Voltage Level
6/11
Test Co nditio ns
IST AT = 1.6 mA
IST AT = 10 mA
IST AT = -10 mA
3.5
4.5
6
V
5
6
-0.7
7
V
V
140
160
180
o
C
50
o
C
o
C
125
Of f-State (note 2)
2.5
4
5
V
VN770P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Co nditio ns
IOL
Open Load Current
Level
On-State
t povl
St atus Delay
(note 3)
t pol
St atus Delay
(note 3)
Min.
Typ .
Max.
Unit
180
mA
5
10
µs
500
2500
µs
5
50
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL(off) = (VCC -VOL)/ROL
note 3: tpovl tpol: ISO definition
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES
(Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Co nditio ns
V CLAMP
Drain-source Clamp
Voltage
ID = 7 A
V CL TH
Drain-source Clamp
Threshold Voltage
ID = 2 mA
V I NCL
Input-Source Reverse
Clamp Voltage
Iin = -1 mA
I DSS
Zero Input Voltage
Drain Current (V in = 0)
VDS = 13 V
VDS = 25 V
I I SS
Supply Current from
Input Pin
VDS = 0 V
V in = 0
Vin = 0
Min.
Typ .
Max.
Unit
36
42
48
V
35
V
-1
-0.3
V
50
200
µA
µA
250
500
µA
Typ .
Max.
Unit
3
V
0.07
0.1
Ω
Ω
Max.
Unit
V in = 0
V in = 0
V in = 10 V
ON (∗)
Symbol
Parameter
Test Co nditio ns
Min.
0.8
V IN(t h)
Input Threshold
Voltage
VDS = V in
ID + Iin = 1 mA
R DS(on)
St atic Drain-source On
Resistance
Vi n = 10 V
Vi n = 5 V
ID = 7 A
ID = 7 A
DYNAMIC
Symbol
Parameter
Test Co nditio ns
Min.
Typ .
7/11
VN770P
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)
g fs (∗)
C os s
Forward
Transconductance
VDS = 13 V
ID = 7 A
Output Capacitance
VDS = 13 V
f = 1 MHz
8
V in = 0
10
S
400
500
pF
SWITCHING (**)
Symbol
Typ .
Max.
Unit
t d(o n)
tr
t d(o ff )
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vg en = 10 V
(see figure 3)
I d = 7A
R gen = 10 Ω
60
160
250
100
120
300
400
200
ns
ns
ns
ns
t d(o n)
tr
t d(o ff )
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vg en = 10 V
(see figure 3)
Id = 7 A
R gen = 1000 Ω
300
1.5
5.5
1.8
500
2.2
7.5
2.5
ns
µs
µs
µs
Turn-on Current Slope
VDD = 15 V
Vi n = 10 V
Total Input Charge
VDD = 12 V
(di/dt) on
Qi
Parameter
Test Co nditio ns
Min.
ID = 7A
R gen = 10 Ω
ID = 7 A
V in = 10 V
120
A/µs
30
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Co nditio ns
V SD (∗)
Forward On Voltage
ISD = 10 A
t rr (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/µs
ISD = 7 A
o
T j = 25 C
VDD = 30 V
(see test circuit, figure 5)
Q rr (∗∗)
I RRM (∗∗)
Min.
Typ .
Vin = 0
Max.
Unit
1.6
V
110
ns
0.34
µC
6.1
A
PROTECTION
Symbol
Parameter
T jsh (∗∗)
Ov ert emperature
Shutdown
150
o
C
T jrs (∗∗)
Ov ert emperature Reset
135
o
C
I gf (∗∗)
Fault Sink Current
Vi n = 10 V
Vi n = 5 V
V DS = 13 V
V DS = 13 V
I lim
Drain Current Limit
Vi n = 10 V
Vi n = 5 V
V DS = 13 V
V DS = 13 V
St ep Response
Current Limit
Vi n = 10 V
Vi n = 5 V
t dlim (∗∗)
8/11
Test Co nditio ns
Min.
Typ .
Max.
50
20
10
10
Unit
mA
mA
14
14
20
20
A
A
30
80
60
150
µs
µs
VN770P
TYPICAL APPLICATION DIAGRAM
9/11
VN770P
SO-28 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
2.65
MAX.
0.104
a1
0.10
0.30
0.004
0.012
b
0.35
0.49
0.013
0.019
b1
0.23
0.32
0.009
0.012
C
0.50
0.020
c1
45 (typ.)
D
17.7
18.1
0.697
0.713
E
10.00
10.65
0.393
0.419
e
1.27
0.050
e3
16.51
0.650
F
7.40
7.60
0.291
0.299
L
0.40
1.27
0.016
0.050
S
8 (max.)
0016572
10/11
VN770P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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