STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh™ II Power MOSFET Features Type VDSS RDS(on) ID STP30NM30N 300V <0.090Ω 30A ■ Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance ■ Low gate resistance 3 1 2 TO-220 Description This 300V Power MOSFET with a new advanced layout brings all unique advantages of MDmesh™ technology to medium voltages. The device exhibits worldwide lowest gate charge for any given on-resistance. Its use is therefore ideal as primary side switch for DC-DC converters as well as for switch mode power supply allowing higher efficiencies and system miniaturization. Internal schematic diagram Application ■ Switching application Order code Part number Marking Package Packaging STP30NM30N P30NM30N TO-220 Tube April 2007 Rev 1 1/12 www.st.com 12 Contents STP30NM30N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STP30NM30N 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 300 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 30 A ID Drain current (continuous) at TC = 100°C 18.5 A Drain current (pulsed) 120 A Total dissipation at TC = 25°C 160 W Derating factor 1.28 W/°C 18 V/ns -65 to 150 °C Value Unit Rthj-case Thermal resistance junction-case max 0.78 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Max value Unit IDM (1) PTOT dv/dt Peak diode recovery voltage slope Tj Tstg Operating junction temperature Storage temperature 1. ISD < 30A, di/dt < 400A/µs, VDD=80%V(BRDSS) Table 2. Symbol Table 3. Symbol Thermal data Parameter Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 900 mJ 3/12 Electrical characteristics 2 STP30NM30N Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS = 0 Typ. Max. 300 Unit V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125°C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.075 0.090 Ω Typ. Max. Unit VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on Static drain-source on resistance Table 5. Symbol 2 VGS = 10V, ID = 15A Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50V, f = 1 MHz, VGS = 0 Rg Gate input resistance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDS = 15V, ID = 15A Min. 9 S 2500 500 70 pF pF pF f=1MHz Gate DC Bias=0 Test signal level=20mV open drain 1.7 Ω VDD = 240V, ID = 30A, VGS = 10V (see Figure 13) 75 15 40 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 4/12 Min. STP30NM30N Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max Unit 25 25 65 25 VDD = 150V, ID = 15A, RG = 4.7Ω, VGS = 10V (see Figure 12) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 30A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 30A, di/dt = 100A/µs VDD= 200V Tj = 25°C (see Figure 17) 350 5 30 Max Unit 30 120 A A 1.3 V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics STP30NM30N 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STP30NM30N Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuits 3 STP30NM30N Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STP30NM30N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP30NM30N TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/12 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STP30NM30N 5 Revision history Revision history Table 8. Revision history Date Revision 16-Apr-2007 1 Changes First release 11/12 STP30NM30N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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