TFDU4100 Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFDU4100 is an infrared transceiver module compliant with the IrDA standard for serial infrared (SIR) data communication, supporting IrDA speeds up to 115.2 kbit/s. The transceiver module consists of a PIN photodiode, an infrared emitter (IRED), and a low-power analog control IC to provide a total frontend solution in a single package. This SIR transceiver is using the small BabyFace package. The transceivers are capable of directly interfacing with a wide variety of I/O chips which perform the pulse-width modulation/demodulation function, including Vishay Semiconductors’ TOIM4232. At a minimum, a cur- 18102 rent-limiting resistor in series with the infrared emitter and a VCC bypass capacitor are the only external components required to implement a complete solution. Features • Compliant to the IrDA physical layer specification (Up to 115.2 kbit/s), HP-SIR® and TV Remote Control e3 • 2.7 V to 5.5 V wide operating voltage range • Low Power Consumption (1.3 mA Supply Current) • Surface mount package - universal (L 9.7 mm × W 4.7 mm × H 4.0 mm) • Open collector receiver output, with 20 kΩ internal pull-up. • BabyFace (Universal) package capable of surface mount solderability to side and to view orientation • Directly interfaces with various Super I/O and controller devices and Vishay Semiconductors’s TOIM4232 I/O • Built-in EMI protection - no external shielding necessary • Few external components required • Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US - Patent No. 6,157,476 • Compliant with IrDA background light specification • EMI Immunity in GSM Bands > 300 V/m verified • Lead (Pb)-free device • Device in accordance to RoHS 2002/95/EC and WEEE 2002/96EC Applications • Printers, fax machines, photocopiers, screen projectors • Telecommunication products (cellular phones, pagers) • Internet TV boxes, video conferencing systems • Medical and industrial data collection devices • • • • External infrared adapters (dongles) Data loggers GPS Kiosks, POS, Point and Pay devices including IrFM - applications Parts Table Part Description Qty / Reel TFDU4100-TR3 Oriented in carrier tape for side view surface mounting 1000 pcs TFDU4100-TT3 Oriented in carrier tape for top view surface mounting 1000 pcs Document Number 82514 Rev. 1.6, 05-Dec-05 www.vishay.com 1 TFDU4100 Vishay Semiconductors Functional Block Diagram V CC1 V CC2 Driver SC RXD Comparator Amplifier R1 IRED Anode AGC Logic TXD IRED Cathode Open Collector Driver GND 14876 Pin Description Pin Number Function Description 1 IRED Anode IRED anode, should be externally connected to VCC2 through a current control resistor 2 IRED Cathode IRED cathode, internally connected to driver transistor Active 3 TXD Transmit Data Input I HIGH 4 RXD Received Data Output, open collector. No external pull-up or pull-down resistor is required (20 kΩ resistor internal to device). Output data is invalid during transmission. O LOW 5 NC No internal connection 6 VCC1 Supply Voltage 7 SC Sensitivity control I HIGH 8 GND Ground www.vishay.com 2 I/O Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors Pinout Definitions: TFDU4100 weight 200 mg In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s "U" Option BabyFace (Universal) FIR: 4 Mbit/s VFIR: 16 Mbit/s IRED Detector MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former version. 1 2 3 4 5 6 7 8 17087 Absolute Maximum Ratings Reference point Ground (pin 8) unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supply voltage range Input current Symbol Min Max Unit 0 V ≤ VCC2 ≤ 6 V Test Conditions VCC1 - 0.5 Typ. +6 V 0 V ≤ VCC1 ≤ 6 V VCC2 - 0.5 +6 V 10 mA for all pins, except IRED anode pin Output sink current Power dissipation see derating curve Junction temperature TJ Ambient temperature range (operating) Storage temperature range Soldering temperature mA mW 125 °C - 25 + 85 °C Tstg - 25 + 85 °C 260 °C 100 mA IIRED(DC) t < 90 μs, ton < 20 % 25 200 Tamb see recommended solder profile Average IRED current Repetitive pulsed IRED current PD IIRED(RP) 500 mA VIREDA - 0.5 +6 V Transmitter data input voltage VTXD - 0.5 VCC1 + 0.5 V Receiver data output voltage VRXD - 0.5 VCC1 + 0.5 V Max Unit IRED anode voltage Eye safety information Symbol Min Typ. Virtual source size Parameter Method: (1-1/e) encircled energy d 2.5 2.8 Maximum intensity for class 1 IEC60825-1 or EN60825-1, edition Jan. 2001 Ie *) Test Conditions mm *) mW/sr (500)**) The device is a "class 1" device. **) IrDA specifies the max. intensity with 500 mW/sr. Document Number 82514 Rev. 1.6, 05-Dec-05 www.vishay.com 3 TFDU4100 Vishay Semiconductors Electrical Characteristics Transceiver Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supported data rates Supply voltage Test Conditions Symbol base band Min Max Unit 2.4 Typ. 115.2 kbit/s receive mode VCC1 2.7 5.5 V transmit mode, R2 = 47 Ω (see recommended application circuit) VCC2 2.0 5.5 V Supply current pin VCC1 (receive VCC1 = 5.5 V mode) ICC1(Rx) 1.3 2.5 mA VCC1 = 2.7 V ICC1(Rx) 1.0 1.5 mA Supply current pin VCC1 (avg) IIRED = 210 mA (at IRED anode (transmit mode), 20% duty cycle pin), VCC1 = 5.5 V ICC1(Tx) 5.0 5.5 mA IIRED = 210 mA (at IRED anode pin), VCC1 = 2.7 V ICC1(Tx) 3.5 4.5 mA VCC1 = OFF, TXD = LOW, VCC2 = 6 V, T = - 25 to + 85 °C IL(IREDA) 0.005 0.5 μA 50 μs Leakage current of IR emitter, IRED anode pin Transceiver power on settling time TPON Optoelectronic Characteristics Receiver Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Minimum detection threshold irradiance Maximum detection threshold irradiance Test Conditions Symbol Min Typ. Max Unit 20 35 mW/m2 15 mW/m2 BER < 10- 8 (IrDA specification) α = ± 15 °, SC = LOW, SIR Ee α = ± 15 °, SC = HIGH, SIR Ee 6 10 α = ± 90 °, VCC1 = 5.0 V Ee 3.3 5 kW/m2 15 kW/m2 α = ± 90 °, VCC1 = 3.0 V Ee 8 Logic LOW receiver input irradiance Note: No detection below this input irradiance Ee 4 Output voltage - RXD Active, C = 15 pF, R = 2.2 kΩ VOL non-active, C = 15 pF, R = 2.2 kΩ VOH mW/m2 0.5 0.8 VCC1 - 0.5 Output current - RXD VOL < 0.8 V Rise time - RXD active to inactive C = 15 pF, R = 2.2 kΩ to VCC1 tr(RXD) 20 200 ns active to inactive C = 15 pF, internal load only tr(RXD) 20 1400 ns inactive to active C = 15 pF, R = 2.2 kΩ to VCC1 tf(RXD) 20 200 ns inactive to active C = 15 pF, internal load only tf(RXD) 20 200 ns Fall time - RXD www.vishay.com 4 IOL V V 4 mA Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors Parameter Test Conditions Pulse width - RXD output Jitter, leading edge of output signal over a period of 10 bit, 115.2 kbit/s Latency Symbol Min Typ. Max tPW 1.63 4 4.3 μs 2 μs 500 μs ti 100 tL Unit Transmitter Tamb = 25 °C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter IRED operating current Test Conditions IRED operating current can be adjusted by variation of R1. Current limiting resistor is in series to IRED: R1 = 14 Ω, VCC2 = 5.0 V Symbol Min Id Typ. Max Unit 0.2 0.28 A Logic LOW transmitter input voltage VIL(TXD) 0 0.8 V Logic HIGH transmitter input voltage VIH(TXD) 2.4 VCC1 + 0.5 V In agreement with IEC825 eye safety limit, if current limiting resistor is in series to IRED: R1 = 14 Ω, VCC2 = 5.0 V, α = ±15 ° Ie 45 200 mW/sr TXD logic LOW level Ie 0.04 mW/sr 900 nm Output radiant intensity Angle of half intensity α Peak wavelength of emission λp Half-width of emission spectrum Optical overshoot Document Number 82514 Rev. 1.6, 05-Dec-05 ± 24 880 ° 45 tropt, tfopt Optical rise time, fall time Rising edge peak-to-peak jitter of optical output pulse 140 Over a period of 10 bits, independent of information content tj 200 nm 600 ns 25 % 0.2 µs www.vishay.com 5 TFDU4100 Vishay Semiconductors ® The only required components for designing an IrDA compatible application using Vishay Semiconductors SIR transceivers are a current limiting resistor to the IRED. However, depending on the entire system design and board layout, additional components may be required (see figure 1). It is recommended that the capacitors C1 and C2 are positioned as near as possible to the transceiver power supply pins. A tantalum capacitor should be used for C1, while a ceramic capacitor should be used for C2 to suppress RF noise. Also, when connecting the described circuit to the power supply, low impedance wiring should be used. eye safety limitations given by IEC825.1. R2, C1 and C2 are optional and dependent on the quality of the supply voltage VCC1 and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver. 500 Vcc = 5.25 V, max. efficiency, center, min. VF, min. VCEsat 450 400 350 Intensity (mW/sr) Recommended Circuit Diagram 300 250 200 Vcc = 4.75 V, min. efficiency, ±15° off axis, max. VF, max. VCEsat 150 100 50 VCC2 R1 VCC1 0 IRED Cathode R2 RXD IRED Anode RXD 6 14377 GND C2 VCC1/SD SC GND NC Figure 2. Ie vs. R1 SC TXD Intensity (mW/sr) Note: outlined components are optional depending on the quality of the power supply 18092 16 TXD TFDx4x00 C1 8 10 12 14 Current Control Resistor ( Ω ) Figure 1. Recommended Application Circuit R1 is used for controlling the current through the IR emitter. For increasing the output power of the IRED, the value of the resistor should be reduced. Similarly, to reduce the output power of the IRED, the value of the resistor should be increased. For typical values of R1 (see figures 2 and 3), e.g. for IrDA compliant operation (VCC2 = 5 V ± 5 %), a current control resistor of 14 Ω is recommended. The upper drive current limitation is dependent on the duty cycle and is given by the absolute maximum ratings on the data sheet and the 14378 760 720 Vcc=3.3 V, max. intensity on 680 axis, min. VF, min. VCEsat 640 600 560 520 480 440 400 360 320 280 240 Vcc = 2.7 V, min. intensity 200 ±15° off axis, max. VF, 160 max. VCEsat 120 80 40 0 0 1 2 3 4 5 6 7 8 Current Control Resistor ( Ω ) Figure 3. Ie vs. R1 Table 1. Recommended Application Circuit Components Component Recommended Value Vishay Part Number C1 4.7 μF, Tantalum 293D 475X9 016B 2T C2 0.1 μF, Ceramic VJ 1206 Y 104 J XXMT R1 14 Ω, 0.25 W (recommended using two 7 ΩM, 0.125 W resistor in series, (VCC2 = 5 V) CRCW-1206-7R00-F-RT1 R2 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1 www.vishay.com 6 Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors The sensitivity control (SC) pin allows the minimum detection irradiance threshold of the transceiver to be lowered when set to a logic HIGH. Lowering the irradiance threshold increases the sensitivity to infrared signals and increases transmission range up to 3 meters. However, setting the Pin SC to logic HIGH also makes the transceiver more susceptible to transmission errors due to an increased sensitivity to fluorescent light disturbances. It is recommended to set the Pin SC to logic LOW or left open if the increased range is not required or if the system will be operating in bright ambient light. Shutdown The internal switch for the IRED in Vishay Semiconductors SIR transceivers is designed to be operated like an open collector driver. Thus, the VCC2 source can be an unregulated power supply while only a well regulated power source with a supply current of 1.3 mA connected to VCC1/SD is needed to provide power to the remainder of the transceiver circuitry in receive mode. The term VCC1/SD is used here for the power supply pin to indicate that VCC1 can be switched off independently to shut down the transceiver. It is allowed to keep the power supply connected to the IRED Anode. In transmit mode, the current at VCC1 is slightly higher (approximately 4 mA average at 3 V supply current) and the voltage is not required to be kept as stable as in receive mode. A voltage drop of VCC1 is acceptable down to about 2.0 V when buffering the voltage directly from the Pin VCC1 to GND see figure 1). This configuration minimizes the influence of high current surges from the IRED on the internal analog control circuitry of the transceiver and the application circuit. Also board space and cost savings can be achieved by eliminating the additional linear regulator normally needed for the IRED’s high current requirements. The transceiver can be very efficiently shutdown by keeping the IRED connected to the power supply VCC2 but switching off VCC1/SD. The power source to VCC1/SD can be provided directly from a microcontroller (see figure 4). In shutdown, current loss is realized only as leakage current through the current limiting resistor to the IRED (typically 5 nA). The settling time after switching VCC1/SD on again is approximately 50 μs. Vishay Semiconductors’ TOIM4232 interface circuit is designed for this shutdown feature. The VCC_SD, S0 or S1 outputs on the TOIM4232 can be used to power the transceiver with the necessary supply current. If the microcontroller or the microprocessor is unable to drive the supply current required by the transceiver, a low-cost SOT23 pnp transistor can be used to switch voltage on and Document Number 82514 Rev. 1.6, 05-Dec-05 off from the regulated power supply (see figure 5). The additional component cost is minimal and saves the system designer additional power supply costs. IIRED Power Supply + – Regulated Power Supply 50 mA R1 IRED Anode Microcontroller or Microprocessor 20 mA IS VCC1/SD TFDU4100 (Note: Typical Values Listed) Receive Mode @ 5 V: IIRED = 210 mA, IS = 1.3 mA @ 2.7 V: IIRED = 210 mA, IS = 1.0 mA Transmit Mode @ 5 V: IIRED = 210 mA, IS = 5 mA (Avg.) @ 2.7 V: IIRED = 210 mA, IS = 3.5 mA (Avg.) 14878 Figure 4. IIRED Power Supply + – Regulated Power Supply 50 mA R1 IRED Anode Microcontroller or Microprocessor 20 mA IS VCC1/SD TFDU4100 (Note: Typical Values Listed) Receive Mode @ 5 V: IIRED = 210 mA, IS = 1.3 mA @ 2.7 V: IIRED = 210 mA, IS = 1.0 mA Transmit Mode @ 5 V: IIRED = 210 mA, IS = 5 mA (Avg.) @ 2.7 V: IIRED = 210 mA, IS = 3.5 mA (Avg.) 14879 Figure 5. www.vishay.com 7 TFDU4100 Vishay Semiconductors Recommended Solder Profiles for TFDU4100 Solder Profile for Sn/Pb soldering 260 Lead Free, Recommended Solder Profile The TFDU4100 is a lead-free transceiver and qualified for lead-free processing. For lead-free solder paste like Sn-(3.0 - 4.0)Ag(0.5 - 0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 7 is Vishay’s recommended profile for use with the TFDU4100 transceivers. For more details please refer to Application note: SMD Assembly Instruction. 10 s max. @ 230 °C 240 °C max. 240 220 2...4 °C/s 200 180 Temperature/°C 160 °C max. 160 140 120 s...180 s 120 90 s max. 100 80 2...4 °C/s 60 40 20 0 0 50 100 150 200 250 300 350 Time/s 19431 Figure 6. Recommended Solder Profile for Sn/Pb soldering 275 T ≥ 255 °C for 10 s....30 s 250 225 Tpeak = 260 °C T ≥ 217 °C for 70 s max Temperature/°C 200 175 150 30 s max. 125 100 90 s...120 s 70 s max. 2°C...4°C/s 75 2°C...3°C/s 50 25 0 0 19532_1 50 100 150 200 Time/s 250 300 350 Figure 7. Solder Profile, RSS Recommendation www.vishay.com 8 Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors 280 Tpeak = 260 °C max 260 240 220 Temperature/°C 200 180 <4 °C/s 160 1.3 °C/s 140 Time above 217 °C t ≤ 70 s Time above 250 °C t ≤ 40 s Peak temperature Tpeak = 260 °C 120 100 80 <2 °C/s 60 40 20 0 0 50 100 150 200 250 300 Time/s Figure 8. Solder Profile, RTS Recommendation A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s damage an optical part because the thermal conductivity is less than compared to a standard IC. Current Derating Diagram Peak Operating Current (mA) 600 500 400 300 200 Current derating as a function of the maximum forward current of IRED. Maximum duty cycle: 25 %. 100 0 –40 –20 0 20 40 60 80 100 120 140 Temperatur (5 °C) 14880 Figure 9. Current Derating Diagram Document Number 82514 Rev. 1.6, 05-Dec-05 www.vishay.com 9 TFDU4100 Vishay Semiconductors Package Dimensions 7x1=7 0.6 2.5 1 8 1 18470 Figure 10. Package drawing and solder footprint TFDU4100, dimensions in mm, tolerance ± 0.2 mm if not otherwise mentioned www.vishay.com 10 Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors Reel Dimensions 14017 Tape Width A max. N mm mm mm mm mm mm mm 24 330 60 24.4 30.4 23.9 27.4 Document Number 82514 Rev. 1.6, 05-Dec-05 W1 min. W2 max. W3 min. W3 max. www.vishay.com 11 TFDU4100 Vishay Semiconductors Tape Dimensions 19824 Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 Figure 11. Tape drawing, TFDU4100 for top view mounting, tolerance ± 0.1 mm www.vishay.com 12 Document Number 82514 Rev. 1.6, 05-Dec-05 TFDU4100 Vishay Semiconductors 19875 Drawing-No.: 9.700-5297.01-4 Issue: 1; 08.04.05 Figure 12. Tape drawing, TFDU4100 for side view mounting, tolerance ± 0.1 mm Document Number 82514 Rev. 1.6, 05-Dec-05 www.vishay.com 13 TFDU4100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 14 Document Number 82514 Rev. 1.6, 05-Dec-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1