Product Specification SGP100 Primary-side-control PWM Controller applications. The result is a low-cost, smaller and lighter charger than a conventional design or a linear transformer. FEATURES Constant-voltage (CV) and constant-current (CC) control without secondary-feedback circuitry Green-mode function: PWM frequency linearly decreasing Fixed PWM frequency at 42kHz with frequency hopping to solve EMI problems Low start-up current: 10μA (typical) Low operating current: 6.5mA (typical) Peak-current-mode control in CV mode Cycle-by-cycle current limiting VDD over-voltage protection with latch (OVP) VDD under-voltage lockout (UVLO) Gate output maximum voltage clamped at 18V Fixed over-temperature protection with latch To minimize the standby power consumption, the proprietary green-mode function provides off-time modulation to linearly decrease PWM frequency under light-load conditions. This green-mode function allows the power supply to meet power conservation requirements. The start-up current is only 10µA, which allows large start-up resistance for further power saving. A charger can be implemented with few external components and minimal cost. A typical output CV/CC characteristic envelope is shown in Figure 1. Vo(V) +/- 10% APPLICATIONS Battery chargers for cellular phones, cordless phones, PDA, digital cameras, and power tools Replacement for linear transformer and RCC SMPS DESCRIPTION This highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. The patented topology of SGP100 enables simplified circuit design for battery charger +/- 10% Io(mA) Figure 1. Typical Output V-I Characteristic TYPICAL APPLICATION © System General Corp. Version 1.1.1 (IAO33.0042.B1) -1- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller MARKING INFORMATION SGP100TP XXXXXXXXYWWV PIN CONFIGURATION T: S=SOP P : Z=Lead Free + ROHS Compatible Null=regular package XXXXXXXX: Wafer Lot Y: Year; WW: Week V: Assembly Location SOP-8 CS 1 8 GATE PGND 2 7 VDD COMI 3 6 SGND COMV 4 5 VS ORDERING INFORMATION Part Number Pb-Free Package SGP100SZ 8-pin SOP-8 PIN DESCRIPTIONS Name Pin No. Type Function CS 1 Analog Input Current sense. Connected to a current-sense resistor for peak-current-mode control in CV mode. The current-sense signal is also provided for output-current regulation in CC mode. PGND 2 Ground Power ground. COMI 3 Analog Output Current compensation. Output of the current error amplifier. Connect a capacitor between the COMI pin and SGND for frequency compensation. COMV 4 Analog Output Voltage compensation. Output of the voltage error amplifier. Connect a capacitor between the COMV pin and SGND for frequency compensation. VS 5 Analog Input Voltage sense. Output-voltage-sense input for output-voltage regulation. SGND 6 Ground Signal ground. VDD 7 Supply Power supply. GATE 8 Driver Output The totem-pole output driver to drive the power MOSFET. © System General Corp. Version 1.1.1 (IAO33.0042.B1) -2- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller BLOCK DIAGRAM © System General Corp. Version 1.1.1 (IAO33.0042.B1) -3- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDD DC Supply Voltage* 30 V VL Input Voltage to CS, COMV, COMI, VS Pins -0.3 to 7.0 V PD Power Dissipation 400 mW RθJC Thermal Resistance (Junction-to-Case) 68.3 °C/W TJ Operating Junction Temperature -40 to +125 °C TSTG Storage Temperature Range -55 to +150 °C TL Lead Temperature (Wave Soldering or Infrared, 10 Seconds) 260 °C ESD Electrostatic Discharge Capability, Human Body Model 4.5 kV Electrostatic Discharge Capability, Machine Model 200 V *All voltage values, except differential voltages, are given with respect to the GND pin. *Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Max. Unit TA Operating Ambient Temperature -20 to +85 °C Max. Unit *For proper operation. ELECTRICAL CHARACTERISTICS VCC=15V, TA=25°C, unless otherwise noted. VDD Section Symbol Parameter VOP Continuously Operating Voltage Test Condition VDD-ON Turn-on Threshold Voltage Min. Typ. 25 V 15 16 17 V 6.25 V VDD-OFF Turn-off Threshold Voltage 6.75 7.25 IDD-ST Start-up Current 0< VDD < VDD-ON-0.16V 10 20 µA IDD-OP Operating Supply Current VDD=20V, FS=FOSC, CL=1nF 6.5 7.5 mA VDD-OVP VDD Over-Voltage Protection Level 27 28 29 V TOVP VDD Over-Voltage Protection Debounce Fs=FOSC 90 130 180 µs IDD-OVP VDD Over-Voltage Protection Holding Current VDD=5V 10 30 50 µA Unit Oscillator Section Symbol FOSC Parameter Frequency Min. Typ. Max. Center frequency Test Condition 39 42 45 Frequency Hopping Range ±2.2 ±2.6 ±3 kHz TFHP Frequency Hopping Period 2.75 3.00 3.25 ms FOSC-N-MIN Minimum Frequency at No-load 350 500 650 Hz FOSC-CM-MIN Minimum Frequency at CCM 20 25 35 kHz © System General Corp. Version 1.1.1 (IAO33.0042.B1) -4- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller Voltage-Sense Section Symbol Parameter Test Condition TRATIO Proportion of TON and TDIS for Brownout Protection* TON /TDIS ITC-25 CV Temperature Compensation Current Min. Typ. Max. Unit 11 µA 1.5 9 10 * Guaranteed by design. Current-Sense Section Symbol Parameter ZCS Filter Resistance Test Condition 2 TPD Propagation Delay to GATE Output 150 TMIN-N-TPD Min. Typ. Max. Unit 200 ns kΩ TLEB Leading-Edge Blanking Time 825 1025 1225 ns TMIN-N Minimum On-time at No Load 1075 1200 1350 ns VSLOPE Slope Compensation* 0.37 0.40 0.43 V DSAW Duty Cycle of SAW Limiter* 35 40 45 % VTH-VA Valley Threshold Voltage for Current Limit VTH-FT - 0.4 VTH-FT - 0.25 VTH-FT - 0.1 V VTH-FT Flat threshold Voltage for Current Limit 1.2 1.3 V 1.5 * Guaranteed by design. VTH − FT 40% Saw Limiter VTH −VA DCYMAX Voltage Error Amplifier Section Symbol Parameter VVR Reference Voltage Test Condition Min. Typ. Max. Unit 2.475 2.500 2.525 VN Green-Mode Starting Voltage FS=FOSC-2KHz V 1.55 1.70 1.85 VG Green-Mode Ending Voltage FS=1KHz V 0.55 0.90 V SG Green-Mode Frequency Decreasing Rate SG=(FOSC-3KHz)/(VN-VG) 25 35 45 Hz/mV IV-SINK Output Sink Current VVS=3V, VCOMV=2.5V 85 100 115 µA IV-SOURCE Output Source Current VVS=2V, VCOMV=2.5V 85 100 115 µA VV-HIGH Output High Voltage VVS=2.3V 4.5 Test Condition Min. Typ. Max. 2.475 2.500 2.525 V V Current Error Amplifier Section Symbol Parameter VIR Reference Voltage II-SINK Output Sink Current VCS=3V, VCOMI=2.5V 40 60 80 µA II-SOURCE Output Source Current VCS=0.5V, VCOMI=2.5V 40 60 80 µA VI-HIGH Output High Voltage VCS=0.5V 4.5 © System General Corp. Version 1.1.1 (IAO33.0042.B1) -5- Unit V www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller GATE Section Symbol Parameter DCYMAX Maximum Duty Cycle Test Condition Min. Typ. Max. 70 75 80 VOL Output Voltage Low VDD=20V, IO=10mA % 1.5 V VOH Output Voltage High VDD=8V, IO=1mA TR Rising Time VDD=20V, CL=1nF 200 TF Falling Time VDD=20V, CL=1nF 80 VCLAMP Output Clamp Voltage VDD=25V 15 18 V Min. Typ. Max. Unit 135 150 165 o 5 Unit V ns ns Over-Temperature Protection Section Symbol Parameter TOTP Threshold Temperature for OTP*+ Test Condition C * Guaranteed by design. + When the over-temperature protection is activated, the power system enters latch mode and output is disabled. © System General Corp. Version 1.1.1 (IAO33.0042.B1) -6- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller TYPICAL CHARACTERISTICS Turn_O n Threshold Voltage (V DD-O N) vs Temperature 7.000 17.0 6.500 16.6 VDD-O N (V) IDD-O P (mA) Operation C urrent (IDD-O P ) vs Temperature 6.000 5.500 16.2 15.8 15.4 5.000 15.0 4.500 -40 -25 -10 5 20 35 50 65 80 95 -40 110 125 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃) Temperature (℃) C enter Frequency (F O S C ) vs Temperature Turn-O ff Threshold Voltage (V DD-O F F ) vs 8.0 47.000 7.6 45.000 F osc (KHz) VDD-O F F (V) Temperature 7.2 6.8 43.000 41.000 39.000 6.4 37.000 6.0 -40 -25 -10 5 20 35 50 65 80 95 110 -40 125 -25 -10 5 35 50 65 80 95 110 125 95 110 Temperature (℃) Temperature (℃) Reference voltage (Vvr) vs Temperature Reference Voltage (V Ir) vs Temperature 2.600 2.60 2.560 2.56 2.520 2.52 V Ir (V ) Vvr (V) 20 2.480 2.48 2.44 2.440 2.40 2.400 -40 -25 -10 5 20 35 50 65 80 95 110 125 -25 -10 5 20 35 50 65 80 125 Temperature (℃ ) Temperature (℃) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -40 -7- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller Min. Frequency if CCM (FOSC-CM-MIN) vs Temperature 600.0 32.00 560.0 30.00 F OS C-CM-MIN (K H z ) F O S C -N-MIN (Hz) Min. Frequence at No-Load (F O S C -N-MIN) vs Temperature 520.0 480.0 440.0 400.0 28.00 26.00 24.00 22.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 20 Temperature (℃) 35 50 65 80 95 110 125 95 110 125 Temperature (℃) Min. On Time (Tmin) vs Temperature G reen-Mode Frequency Decreasing Rate (S G ) vs 45.0 1500.0 40.0 1400.0 Tm in (nS ) SG (Hz/mV) Temperature 35.0 30.0 25.0 1300.0 1200.0 1100.0 20.0 1000.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 Temperature (℃) 20 35 50 65 80 Temperature (℃) Leading Edge Blanking Time (T L E B ) vs Temperature 1.800 1200.0 1.740 1100.0 1.680 VN (V) TLEB (nS) G reen-Mode S tarting Voltage (V N) vs Temperature 1300.0 1000.0 1.620 1.560 900.0 1.500 800.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃) Temperature (℃) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -40 -8- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller Output Sink C urrent (II-S INK ) vs Temperature 0.90 80.000 0.80 70.000 II-SINK (uA) V G (V) Green-M ode End ing Vol tag e (Vg ) vs Temperature 0.70 0.60 60.000 50.000 40.000 0.50 30.000 0.40 -40 -25 -10 5 20 35 50 65 80 95 110 -40 125 -25 -10 5 Temperature (℃) 80.000 120.000 70.000 110.000 I V-SINK (uA) II-SOURCE (uA) 35 50 65 80 95 110 125 Output S ink C urrent (IV -S INK ) vs Temperature Output S ource C urrent (II-S O URC E ) vs Temperature 60.000 50.000 40.000 30.000 100.000 90.000 80.000 70.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 5 Temperature (℃) 20 35 50 65 80 95 110 125 Temperature (℃) O utput Source C urrent (IV -S O URC E ) vs Temperature Maximum Duty C ycle (DC Y MA X ) vs Temperature 120.000 81.00 110.000 79.00 DC Y MA X (%) IV-SOURCE (uA) 20 Temperature (℃) 100.000 90.000 80.000 77.00 75.00 73.00 71.00 70.000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃) © System General Corp. Version 1.1.1 (IAO33.0042.B1) -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (℃) -9- www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller OPERATION DESCRIPTION The patented topology of SGP100 enables simplified circuit design for battery charger applications. Without secondary feedback circuitry, the CV and CC control can be achieved accurately. As shown in Figure 2, with the frequency-hopping PWM operation, EMI problem can be solved using minimized filter components. SGP100 also provides many protection functions. The VDD pin is equipped with over-voltage protection and under-voltage lockout. Pulse-by-pulse current limiting and CC control ensure over-current protection at heavy loads. The GATE output is clamped at 18V to protect the external MOSFET from over-voltage damage. Also, the internal over-temperature protection shuts down the controller with latch when over heated. Gate Signal SGP100 uses the positive, proportional, output load parameter (VCOMV) as an indication of the output load for modulating the PWM frequency. In heavy load conditions, the PWM frequency is fixed at 42KHz. Once VCOMV is lower than VN, the PWM frequency starts to linearly decrease from 42KHz to 500Hz (0.55V), providing further power savings and meeting international power conservation requirements. Frequency 42KHz 40KHz 1KHz 500Hz VG 44.6KHz VN VCOMV Figure 3. Green-Mode Operation Frequency vs. VCOMV +/- 2.6KHz 39.4KHz Frequency Hopping Period → 3mS Constant Voltage (CV) and Constant Current (CC) Operation Figure 2. Frequency Hopping Start-up Current The start-up current is only 10µA. Low start-up current allows a start-up resistor with high resistance and low-wattage to supply the start-up power for the controller. A 1.5MΩ, 0.25W start-up resistor and a 10µF/25V VDD hold-up capacitor are sufficient for an AC-to-DC power adapter with a wide input range (90VAC to 264VAC). Operating Current The operating current has been reduced to 6.5mA. The low operating current results in higher efficiency and reduces the VDD hold-up capacitance requirement. Green-Mode Operation An innovative technique of the SGP100 can accurately achieve CV/CC characteristic output without secondary side voltage or current-feedback circuitry. There is a feedback signal for CV/CC operation from the reflected voltage across the primary auxiliary winding. This voltage signal is proportional to secondary winding, so it provides controller the feedback signal from secondary side and achieves constant-voltage output. In constant-current output, this voltage signal is detected and examined by the precise constant current regulation controller, which determines the on-time of the MOSFET to control input power and provide constant-current output. With feedback voltage VCS across the current-sense resistor, the controller can obtain the input power of power supply. Therefore, the region of constant current output operation can be adjusted by a current-sense resistor. Figure 3 shows the characteristics of the PWM frequency vs. the output voltage of the error amplifier (VCOMV). The © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 10 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller Temperature Compensation VDD Over-Voltage Protection The SGP100 has built-in temperature compensation circuitry to provide constant reliable voltage regulation at differing ambient temperatures. This internal positive temperature coefficient (PTC) compensation current is used to compensate for the temperature due to the forward-voltage drop of the diode output. The internal PTC current passes through the external resistor (R1). The value of R1 determines the temperature compensation amount. The suggested value for R1 is 10~20KΩ with a +/-1% tolerance value. VDD over-voltage protection prevents damage due to over-voltage conditions. When the voltage VDD exceeds 28V due to abnormal conditions, PWM output is latched off. Over-voltage conditions are usually caused by open feedback loops. Temperature Compensation Over-Temperature Protection (OTP) The SGP100 has a built-in temperature sensing circuit to shut down the PWM output then enters latch mode once the junction temperature exceeds 150°C. When the PWM output shuts down, the VDD voltage gradually drops to the UVLO voltage. The PWM controller does not release latch mode until the AC is unplugged. PTC Vs SGP100 R1 10k~20k ± 1% + Auxiliary Winding Gate Output The SGP100 BiCMOS output stage is a fast totem pole gate driver. Cross conduction is avoided to minimize heat dissipation, increase efficiency, and enhance reliability. The output driver is clamped by an internal 18V Zener diode to protect power MOSFET transistors from undesired over-voltage gate signals. VR1 − Figure 4. Temperature Compensation Leading-Edge Blanking Built-in Slope Compensation Each time the power MOSFET is switched on, a turn-on spike occurs at the sense resistor. To avoid premature termination of the switching pulse, a 150ns leading-edge blanking time is built in. Conventional RC filtering can therefore be omitted. During this blanking period, the current-limit comparator is disabled and cannot switch off the gate driver. The sensed voltage across the current-sense resistor is used for current mode control and pulse-by-pulse current limiting. Built-in slope compensation improves stability and prevent sub-harmonic oscillations due to peak-current mode control. The SGP100 has a synchronized, positively-sloped ramp built-in at each switching cycle. Noise Immunity Under-Voltage Lockout (UVLO) The turn-on and turn-off thresholds are fixed internally at 16V/6.75V. During start-up, the hold-up capacitor must be charged to 16V through the start-up resistor, so that the SGP100 is enabled. The hold-up capacitor continues to supply VDD until power can be delivered from the auxiliary winding of the main transformer. VDD must not drop below 6.75V during this start-up process. This UVLO hysteresis window ensures that hold-up capacitor is adequate to supply VDD during start-up. © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 11 - Noise from the current sense or the control signal can cause significant pulse width jitter. While slope compensation helps alleviate these problems, further precautions should still be taken. Good placement and layout practices should be followed. Avoiding long PCB traces and component leads, locating compensation and filter components near the SGP100, and increasing the power MOS gate resistance improves performance. www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller REFERENCE CIRCUIT 5W Flyback 5V/1A Circuit R13 L AC input R11 L1 D4 C8 L2 T1 BD1 R8 C1 C5 C2 C9 D3 N C10 R12 R1 D1 R2 C3 R3 U1 7 R4 VS 5 VDD C4 3 COMI C7 R10 C6 R9 GATE CS 1 PGND 2 4 COMV 6 SGND 8 D2 R5 R6 R7 SGP100 BOM List Symbol Component Symbol Component Symbol Component R1 Resistor 1.5MΩ 1/2 W D3 Diode 1A/1000V FR107 TR1 R2 Resistor 4.7Ω D4 Diode 5A/60V SB560 R3 Resistor 115KΩ 1% C1 Electrolytic Capacitor 1µF/400V R4 Resistor 18KΩ 1% C2 Electrolytic Capacitor 10µF/400V R5 Resistor 47Ω C3 Electrolytic Capacitor 10µF/50V R6 Resistor 100Ω C4 MLCC X7R 47pF R7 Resistor 1.4Ω 1/2W 1% C5 Snubber Cap. 222pF/1KV R8 Resistor 150KΩ 1/2W C6 MLCC X7R 683pF R9 Resistor 200KΩ C7 MLCC X7R 103pF R10 Resistor 56KΩ C8 MLCC 102pF/100V R11 Resistor 47Ω C9 Electrolytic Cap. 560µF/10V L-ESR R12 Resistor 510Ω C10 Electrolytic Cap. 330µF/10V L-ESR R13 WireWound Resistor 18Ω L1 Inductor 1mH BD1 Rectifier Diode 1N4007 *4 L2 Inductor 5µH D1 Diode 1A/200V FR103 Q1 Fairchild 2A/600V 2N60 TO-251 D2 Diode 1N4148 U1 SGP100 © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 12 - EE-16 Lm=1.5mH Pri:Sec:Aux=135:10:33 www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller PACKAGE INFORMATION 8PINS-SOP(S) 8 C 5 H E F 1 4 b e D Θ A1 L A DIMENSIONS Symbol Millimeter Min. Typ. Max. Inch Min. A A1 b c D E e F H L θ˚ 1.346 0.101 1.752 0.254 0.053 0.004 0.406 0.203 4.648 3.810 1.016 5.791 0.406 0° © System General Corp. Version 1.1.1 (IAO33.0042.B1) 1.270 0.381X45° Typ. Max. 0.069 0.010 0.016 0.008 4.978 3.987 1.524 0.183 0.150 0.040 6.197 1.270 8° 0.228 0.016 0° - 13 - 0.050 0.015X45° 0.196 0.157 0.060 0.244 0.050 8° www.sg.com.tw • www.fairchildsemi.com September 26, 2007 Product Specification SGP100 Primary-side-control PWM Controller © System General Corp. Version 1.1.1 (IAO33.0042.B1) - 14 - www.sg.com.tw • www.fairchildsemi.com September 26, 2007