KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -1.0 A ICP Collector Current (Pulse) * -1.5 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW ≤ 10ms, Duty cycle ≤ 50% Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -25 V BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = -30V, IE = 0 -0.1 µA IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -0.1 µA hFE1 hFE2 DC Current Gain VCE = -1V, IC = -0.1A VCE = -1V, IC = -1.0A VCE (sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A VBE (sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A VBE (on) Base-Emitter On Voltage VCE = -6V, IC = -10mA fT Current Gain Bandwidth Product VCE = -6V, IC = -10mA 110 MHz Cob Output Capacitance VCB = -6V, IE = 0, f = 1MHz 18 pF ©2005 Fairchild Semiconductor Corporation KSB798 Rev. B1 1 90 50 400 -0.4 -0.6 V -1.2 V -0.7 V www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor July 2005 Classification O Y G hFE1 90 ~ 180 135 ~ 270 200 ~ 400 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 798 KSB798 SOT-89 13” -- 4,000 KSB798 Rev. B1 2 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor hFE Classification KSB798 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain -1.0 1000 VCE= -1V -0.8 -0.7 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -0.9 IB = -8mA IB = -7mA IB = -6mA IB = -5mA -0.6 IB = -4mA -0.5 IB = -3mA -0.4 IB = -2mA -0.3 -0.2 IB = -1mA 100 10 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 1 -10 -10 Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 -10 IC = 10 IB VBE(sat) -1 -0.1 -0.01 f = 1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VCE(sat) 10 1 -1 -10 -100 -1000 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area -10 VCE = -6V o 100 10 1 DC -0.1 -0.01 10 100 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT KSB798 Rev. B1 -1 s IC[A], COLLECTOR CURRENT 1.TC=25 C 2.Single pulse 0m 20 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -100 3 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSB798 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSB798 Rev. B1 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor TRADEMARKS