FAIRCHILD RMPA2453

RMPA2453
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
General Description
Features
The RMPA2453 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz
frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to
50Ω minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
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•
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•
•
•
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26dB small signal gain
26.5dBm output power @ 1dB compression
2.5% EVM at 18dBm modulated output power
3.5% EVM at 19dBm modulated output power
3.3V single positive supply operation
Two power saving shutdown options (bias and logic
control)
Integrated power detector with 20dB dynamic range
Low profile 16 pin 3 x 3 x 0.9 mm leadless package
Internally matched to 50Ω and DC blocked RF input/
output
Optimized for use in 802.11b/g applications
Device
VL
VM12
VDET REF
VDET
VC2
Functional Block Diagram
16
15
14
13
VOLTAGE
DETECTOR
1
12
N/C
11
RF OUT
BIAS
RF IN
2
INPUT
MATCH
INT STG
MATCH
OUTPUT
MATCH
N/C
4
9
N/C
©2004 Fairchild Semiconductor Corporation
5
6
7
8
N/C
RF OUT
N/C
10
N/C
3
VC1
RF IN
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
VL (logic)
RF IN
RF IN
N/C
VC1
N/C
N/C
N/C
N/C
RF OUT
RF OUT
N/C
VC2
VDET
VDET REF
VM12
Backside Ground
RMPA2453 Rev. D
RMPA2453
July 2004
Symbol
VC1, VC2
IC1, IC2
VM12
VL
PIN
TCASE
TSTG
Parameter
Positive Supply Voltage
Supply Current
IC1
IC2
Positive Bias Voltage
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Ratings
5
Units
V
120
700
4.0
5
10
-40 to +85
-55 to +150
mA
mA
V
V
dBm
°C
°C
Notes:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
Electrical Characteristics1, 3 802.11g OFDM Modulation (RF framed with 176ms burst time 100ms
idle time) 54Mbps Data Rate 16.7MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5
Min
2.4
3.0
24.5
Typ
3.3
26
133
145
2.5
3.5
515
5.0
21.0
Max
2.5
3.6
29
160
165
3.53
4.53
600
7.0
Units
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics3, 6 802.11b CCK Modulation (RF not framed) 11Mbps Data Rate
22.0MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current
First Sidelobe Power
Second Sidelobe Power
Max POUT Spectral Mask Compliance7
Min
2.4
3.0
24.5
Typ
3.3
26
250
-35
-55
24.0
Max
2.5
3.6
29
Units
GHz
V
dB
mA
dBc
dBc
dBm
Notes:
1: VC1,VC2, VM12 = 3.3V, TC = 25°C, PA is constantly biased, 50Ω system.
2: Percentage includes system noise floor of EVM = 0.8%.
3: EVM not measured 100% in production.
4: POUT measured at PIN corresponding to power detection threshold.
5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6: VC1,VC2, VM12 = 3.3V, TC = 25°C, POUT = +23dBm, 50Ω system. Satisfies spectral mask.
7: PIN is adjusted to point where spectral performance reaches maximum limit.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Absolute Ratings1
Parameter
Frequency
Supply Voltage
Gain
Total Quiescent Current
Bias Current at pin VM122
P1dB Compression
Standby Current3
Shutdown Current (VM12 = 0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector POUT Threshold
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic
Shutdown Control (VL):
Device Off, Logic High Input
Device On, Logic Low Input
Logic Current
Turn-on Time4
Turn-off Time
Spurious (Stability)5
Min
2.4
3.0
24.5
10.0
25
2.0
Typ
3.3
26
105
12.5
26.5
0.7
<1.0
19
22
2.0
7.0
-45
-42
2.4
0.0
150
<1
<1
-65
Max
2.5
3.6
29
135
15.0
9.0
0.8
Units
GHz
V
dB
mA
mA
dBm
mA
µA
dB
dB
V
dBm
dBc
dBc
V
V
µA
µS
µS
dBc
Notes:
1: VC1,VC2, VM12 = 3.3V, TC = 25°C, 50Ω system.
2: Bias current is included in the Total Quiescent Current.
3: VL is set to Input Logic Level High for PA Off operation.
4: Measured from Device On signal turn on (Logic Low) to the point where RF POUT stabilizes to 0.5dB.
5: Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Electrical Characteristics1 Single Tone
RMPA2453
Typical Characteristics 802.11g
Temperature dependency
Left column VM12 = 3.3V
Right column VM12 = 3.0V
Typical EVM(1) versus Total Integrated Output Channel Power
Typical EVM
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
+25C
-40C
+85C
9
8
9
-40C
+85C
7
Total EVM (%)
Total EVM (%)
+25C
8
7
6
5
4
6
5
4
3
3
2
2
1
1
0
0
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
0
26
Typical Total Current vs. Total Integrated Output Channel Power
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
Typical Total Current vs. Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
240
240
220
+25C
-40C
+85C
200
220
+25C
200
-40C
+85C
180
Total Current (mA)
180
Total Current (mA)
versus Total Integrated Output Channel Power
10
10
160
140
120
100
160
140
120
100
80
80
60
60
40
40
20
20
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
0
2
4
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
27
27
26
26
25
25
Gain (dB)
28
24
23
+25C
-40C
+85C
21
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
28
22
6
Typical Gain versus Total Integrated Output Channel Power
Typical Gain versus Total Integrated Output Channel Power
Gain (dB)
(1)
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
+25C
-40C
+85C
24
23
22
21
20
20
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
Total Integrated Output Power (dBm)
22
24
26
Note:
1: Uncorrected EVM. Source EVM is approximately 0.8%.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Typical Characteristics 802.11g (Continued)
Temperature Dependency
Left column VM12 = 3.3V
Right column VM12 = 3.0V
Typical VDET versus Total Integrated Output Channel Power
Typical VDET versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
1500
+25C
-40C
+85C
1200
Detector Output VDET (mV)
Detector Output VDET (mV)
1500
900
600
300
+25C
-40C
+85C
1200
900
600
300
0
0
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
Total Integrated Output Power (dBm)
22
24
26
Frequency Dependency VM12 = 3.3V
Typical EVM
(1)
Typical Gain versus Total Integrated Output Channel Power
versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
T A = 25oC, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
54Mbps Data Rate OFDM 16.7MHz BW
TA = 25o C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
10
28
2.40GHz
2.45GHz
2.50GHz
9
8
27
26
6
Gain (dB)
Total EVM (%)
7
5
4
25
24
23
2.40GHz
2.45GHz
2.50GHz
3
22
2
21
1
0
20
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
0
2
Typical Total Current vs. Total Integrated Output Channel Power
4
6
20
22
24
26
Typical VDET versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
TA = 25oC, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
54Mbps Data Rate OFDM 16.7MHz BW
TA = 25o C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
240
1500
200
Detector Output VDET (mV)
2.40GHz
2.45GHz
2.50GHz
220
180
Total Current (mA)
8
10
12
14
16
18
Total Integrated Output Power (dBm)
160
140
120
100
80
60
2.40GHz
2.45GHz
2.50GHz
1200
900
600
300
40
20
0
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
0
2
4
6
8
10
12
14
16
18
Total Integrated Output Power (dBm)
20
22
24
26
Note:
1: Uncorrected EVM. Source EVM is approximately 0.8%.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
Spec ANA Pout = 23 dBm
Pin adjusted to the point where the part just begins to approach the 802.11b spectral mask
requirements.
RMPA2453 Spectral Plot Showing Compliance to 802.11b
Spectral Mask Requirements @ 23 dBm Modulated Output Power
11 Mbps CCK Data 22 MHz BW
VC1, VC2 = 3.3V VM12 = 3.3V T=25°C
Single Tone
Typical Single Tone Gain versus Single Tone Output Power
Typical Small Signal S-parameters versus Frequency
Vm12=3.3V, Vc1=3.3V, Vc2=3.3V, T A = 25oC
o
Vm12=3.3V, Vc1=3.3V, Vc2=3.3V, TA = 25 C
35
28
30
27
20
Mag(S11)
15
Mag(S21)
10
Mag(S22)
26
Total EVM (%)
S-parameters (dB)
25
5
0
-5
-10
25
24
23
2.40GHz
-15
22
-20
2.45GHz
2.50GHz
-25
21
-30
-35
20
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2
4
6
Frequency (GHz)
8
10
12
14
16
18
20
22
24
26
28
Total Output Power (dBm)
Application Information
Precautions to Avoid Permanent Device Damage:
Static Sensitivity: Follow ESD precautions to protect against ESD damage.
• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices.
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Typical Characteristics 802.11b
RMPA2453
Package Outline
Dimensions in inches [mm]
2453
WWWY
Front Side View
See
Detail A
Detail A
Bottom View as Viewed from Bottom
Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side.
Evaluation Board Schematic
2453
WWWY
Backside Ground
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
RMPA2453
Evaluation Board of Materials
Evaluation Board Layout
C8
C4 R2
C3
C5 R1
L1
C6
C2
L2
C1
C7
C9
Actual Board Size = 2.0" X 1.5"
©2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. D
Recommended turn-on sequence:
1) Connect common ground terminal to the Ground (GND)
pin on the board.
2) Apply low voltage 0.0 to +1.0 V to pin V L.
3) Apply positive supply voltage VC1 (= 3.3V) to pin VC1
(first stage collector).
4) Apply positive supply voltage VC2 (= 3.3V) to pin VC2
(second stage collector).
5) Apply positive bias voltage VM12 (= 3.3V) to pin VM12
(bias networks).
6) At this point, you should expect to observe the following
positive currents flowing into the pins:
Pin
VM12
VC1
VC2
VL
Current
10.0 – 15.0 mA
35.0 – 55.0 mA
40.0 – 60.0 mA
<1 nA
©2004 Fairchild Semiconductor Corporation
7) Apply input RF power to SMA connector pin RFIN.
Currents in pins VC1 and VC2 will vary depending on the
input drive level.
8) Vary positive voltage VL on pin VREG from +0.5V to
+2.4V to shut down the amplifier or alter the power level.
Shut down current flow into the pins:
Pin
VM12
VC1
VC2
VL
Current
<0.7 mA
<1 nA
<1 nA
<0.25 mA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence
above.
Note:
1: Turn on sequence is not critical and it is not necessary to sequence power
supplies in actual system level design.
RMPA2453 Rev. D
RMPA2453
Evaluation Board Turn-On Sequence1
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11