DC COMPONENTS CO., LTD. 2N3772 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for linear amplifiers, series pass regulators, and inductive switching applications. TO-3 Pinning 1 = Base 2 = Emitter Case = Collector 1.573 Max (39.96) .875(22.23) .759(19.28) .135 Max (3.43) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Rating VCBO 100 V VCEO 60 V VCEX 80 V VEBO 7 V Collector Current (continuous) IC 30 A Collector Current (peak) IC 30 A Total Power Dissipation(TC=25 C) PD 150 W Junction Temperature TJ +200 o Storage Temperature TSTG -65 to +200 .043(1.09) .038(0.97) Unit 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) .169(4.30) .151(3.84) .169(4.30) .151(3.84) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) .225(5.72) .205(5.20) 1 Case: Collector o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Sustaining Voltage Symbol Min Typ Max Unit VCEO(sus) 60 - - V VCEX(sus) 80 - - V IC=0.2A, VBE(off)=1.5V, RBE=100Ω VCER(sus) 70 - - V IC=0.2A, RBE=100Ω ICEO Collector Cutoff Current ICEX Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Test Conditions IC=0.2A, IB=0 - - 10 mA VCE=50V, IB=0 - - 5 mA VCE=100V, VBE(off)=1.5V - - 10 mA VCE=30V, VBE(off)=1.5V, TC=150 C o ICBO - - 5 mA VCB=50V, IE=0 IEBO - - 5 mA VBE=7V, IC=0 VCE(sat)1 - - 1.4 V IC=10A, IB=1.5A VCE(sat)2 - - 4 V IC=20A, IB=4A (1) VBE(on) - - 2.2 V IC=10A, VCE=4V hFE1 15 - 60 - IC=10A, VCE=4V hFE2 5 - - - IC=20A, VCE=4V Is/b 2.5 - - A VCE=60V, t=1.0s, Non-repetitive Current Gain - Bandwidth Product fT 0.2 - - MHz IC=1A, VCE=4V, f=50KHz Small-Signal Current Gain hfe 40 - - - IC=1A, VCE=4V, f=1KHz Base-Emitter On Voltage DC Current Gain (1) Second Breakdown Collector with Base Forward Bias (1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%