UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150 °C Junction Temperature Tj 150 °C Total Power Dissipation (Ta=25°C) Pc 750 mW 60 V Storage Temperature Collector to Base Voltage: D1616 VCBO D1616A 120 Collector to Emitter Voltage: D1616 VCEO D1616A 50 V 60 Emitter to Base Voltage VEBO 6 V Collector Current (DC) Ic 1 A Collector Current (*Pulse) Note: (*) Pulse width≤10ms, Duty cycle<50% Ic 2 A CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITIONS Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain: D1616 D1616A ICBO IEBO VCE(SAT) VBE(SAT) VBE(ON) hFE1 VCB=60V VEB= 6V IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=50mA VCE=2V, IC=100mA hFE2 fT Cob ton VCE=2V, IC=1A VCE=2V, IC=100mA VCB=10V, f=1MHz VCE=10V, IC=100mA Current Gain Bandwidth Product Output Capacitance Turn On Time UTC UNISONIC TECHNOLOGIES MIN. 600 135 135 81 100 TYP. MAX. UNIT 0.15 0.9 640 100 100 0.3 1.2 700 600 400 nA nA V V mV 160 19 0.07 CO., LTD. MHz pF us 1 QW-R201-008,A UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTIC SYMBOL TEST CONDITIONS Storage Time Fall Time ts tf IB1=-IB2=10mA VBE(off)=-2～-3V Y 135-270 G 200-400 MIN. TYP. MAX. 0.95 0.07 UNIT us us Classification of hFE1 RANK hFE1 UTC UNISONIC TECHNOLOGIES L 300-600 CO., LTD. 2 QW-R201-008,A UTC 2SD1616/A UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-008,A