DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature o C) Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 120 60 6 1 2 750 +150 -55 to +150 .500 Min (12.70) Unit V V V A A mW o C o C .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 120 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA IC=100µA Collector Cutoff Current ICBO - - 0.1 µA VCB=60V Emitter Cutoff Current IEBO - - 0.1 µA VEB=6V VCE(sat) - 0.15 0.3 V IC=1A, IB=50mA VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA VBE(on) 0.6 - 0.7 V IC=50mA, VCE=2V (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) Base-Emitter On Voltage hFE1 135 - 600 - IC=100mA, VCE=2V hFE2 81 - - - IC=1A, VCE=2V Transition Frequency fT 100 160 - MHz DC Current Gain(1) IC=100mA, VCE=2V Output Capacitance Cob - - 19 pF VCB=10V, f=1MHz, IE=0 Turn-On Time ton - 0.07 - µS IC=100mA, VCE=10V Storage Time ts - 0.95 - µS IB1=IB2=10mA Fall Time tf - 0.07 - µS VBE(off)=-2 ~ -3V (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE1 Rank Y G L Range 135~270 200~400 300~600