NTE5460 Silicon Controlled Rectifier (SCR) Description: The NTE5460 is designed primarily for half–wave AC control applications such as motor controls, heating controls, and power supply crowbar circuits. Features: D Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability D 300A Surge Current Capability D Insulated Package Simplifies Mounting Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Reverse Voltage (TJ = –40° to +125°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . 800V On–State RMS Current (TC = +70°C, Full Cycle Sine Wave 50 to 60Hz, Note 2), IT(RMS) . . . . . 25A Peak Non–Repetitive Surge Current, ITSM (One Full Cycle, 60Hz, TC = +70°C, Preceeded and Followed by Rated Current) . . . . 300A Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375A2s Peak Gate Power (TC = +70°C, Pulse Width = 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power (TC = +70°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current (TC = +70°C, Pulse Width = 10µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Peak Forward Blocking Current IDRM Test Conditions Min Typ Max Unit VDRM = 800V, TJ = +25°C – – 10 µA VDRM = 800V, TJ = +125°C – – 2 mA Peak Reverse Blocking Current IRRM VRRM = 800V, TJ = +125°C – – 2 mA Forward “ON” Voltage VTM ITM = 50A, Note 3 – – 1.8 V DC Gate Trigger Current IGT Anode Voltage = 12V, RL = 100Ω – – 40 mA DC Gate Trigger Voltage VGT Anode Voltage = 12V, RL = 100Ω – 0.8 1.5 V Gate Non–Trigger Voltage VGD Anode Voltage = 800V, RL = 100Ω, TJ = +125°C 0.2 – – V Holding Current IH Anode Voltage = 12V – 20 40 mA Turn–On Time tgt ITM = 25A, IGT = 40mA – 1.5 – µs Turn–Off Time tq VDRM = 800V, ITM = 25A, IR = 25A – 15 – µs VDRM = 800V, ITM = 25A, IR = 25A, TJ = +125°C – 35 – µs Gate Open, VDRM = 800V, Exponential Waveform – 100 – V/µs Critical Rate of Rise of Off–State Voltage dv/dt Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max K A G .531 (13.5) Min .100 (2.54) .059 (1.5) Max