FW216 Ordering number : ENA0074 N-Channel Silicon MOSFET FW216 General-Purpose Switching Device Applications Features • • Motor drive applications. 4.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 Gate-to-Source Voltage VGSS ±20 V ID 3.5 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 14 A Mounted on a ceramic board (2000mm2✕0.8mm) 1unit, PW≤10s 1.6 W PT Tch Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Allowable Power Dissipation 2.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V 35 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=3.5A 1.5 RDS(on)1 RDS(on)2 ID=3.5A, VGS=10V ID=2A, VGS=4.5V Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS td(off) tf 2.4 Unit max V 1 µA ±10 µA 2.5 4 V S 70 90 mΩ 140 196 mΩ 260 pF 65 pF VDS=10V, f=1MHz See specified Test Circuit. 40 pF 9 ns See specified Test Circuit. 8 ns See specified Test Circuit. 19 ns See specified Test Circuit. 8 ns Marking : W216 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83005PA MS IM TB-00001339 No. A0074-1/4 FW216 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=3.5A 6 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3.5A 1.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3.5A Diode Forward Voltage VSD IS=3.5A, VGS=0V 1.0 Package Dimensions unit : mm 7005-003 VDD=15V 0.3 6.0 4.4 D VOUT PW=10µs D.C.≤1% G 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.2 1.5 1.8 MAX FW216 P.G 50Ω S 0.1 5.0 ID=3.5A RL=4.3Ω VIN 4 0.43 1.27 0.595 V 10V 0V 5 1 1.2 Switching Time Test Circuit VIN 8 nC 0.88 SANYO : SOP8 25°C 5.0 VDS=10V Ta= -- V 8.0V 6.0V 4.5 V 4.0 V 10.0 3.0 ID -- VGS 5.5 3.0V 1.5 1.0 3.0 2.5 2.0 1.5 1.0 VGS=2.5V 0.5 3.5 5°C --25°C C 2.0 4.0 Ta= 7 Drain Current, ID -- A Drain Current, ID -- A 4.5 2.5 25° 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 0 1 2 3 4 5 Gate-to-Source Voltage, VGS -- V IT10125 RDS(on) -- VGS 300 25° 75°C C ID -- VDS 3.5 6 IT10126 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 250 200 3.5A 150 ID=2.0A 100 50 0 2 3 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V 14 15 16 IT10127 250 200 V 4.5 S= VG , 0A 2. I D= 150 V =10.0 , V GS 100 .5A I D=3 50 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10128 No. A0074-2/4 FW216 yfs -- ID 3 °C 25 2 C 5° --2 C = 75° Ta 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.1 7 5 5 0.4 0.6 0.8 1.0 1.2 IT10130 Ciss, Coss, Crss -- VDS 7 f=1MHz 5 Ciss Ciss, Coss, Crss -- pF 3 3 td(off) 2 tf td(on) 10 7 5 tr 3 1.4 Diode Forward Voltage, VSD -- V IT10129 VDD=15V VGS=10V 7 Switching Time, SW Time -- ns 3 2 0.01 0.2 5 7 SW Time -- ID 100 2 100 7 5 Coss 3 Crss 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT10131 Drain Current, ID -- A 8 2 0 2 3 4 5 Total Gate Charge, Qg -- nC 6 Mounted on a ceramic board (2000mm2 ✕ 0.8mm), PW≤10s 2.2 2.0 1.6 1.5 To t al Di ss 1u nit 1.0 ip ati on 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10135 30 35 IT10132 ≤10µs 0µ 1m 3 2 10 ms 0m s s s 10 1.0 7 5 DC 10 s era Operation in this tio area is limited by RDS(on). n 3 2 op 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (2000mm2 ✕ 0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V IT10133 PD -- Ta 2.5 25 ID=3.5A 0.01 0.1 7 Allowable Power Dissipation (FET1), PD -- W 1 20 10 3 2 0 15 IDP=14A 10 7 5 4 10 ASO 3 2 VDS=10V ID=3.5A 6 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 1.0 7 5 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W 3 2 25°C --25°C 5 VGS=0V Ta=7 5°C 7 IS -- VSD 10 7 5 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 5 7 IT10134 PD (FET1) -- PD (FET2) 1.8 Mounted on a ceramic board (2000mm2 ✕ 0.8mm), PW≤10s 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Power Dissipation (FET2), PD -- W 1.8 IT10136 No. A0074-3/4 FW216 Note on usage : Since the FW216 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No. A0074-4/4