Ordering number : ENN7406 ECH8606 N-Channel Silicon MOSFET ECH8606 Ultrahigh-Speed Switching Applications Features unit : mm 2206A [ECH8606] 0.3 5 1 4 0.65 0.15 0.25 2.3 8 2.9 Top View 0.9 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 • Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.25 • Package Dimensions 2.8 • Specifications SANYO : ECH8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V 6 A Drain Current (DC) ID Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm)1unit 1.3 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions Ratings min ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 30 IDSS IGSS VGS(off) VDS=10V, ID=1mA 1.0 typ Marking : KF Unit max V 1 µA ±10 µA 2.4 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13003 TS IM TA-100299 No.7406-1/4 ECH8606 Continued from preceding page. Parameter Symbol Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions yfs RDS(on)1 RDS(on)2 min VDS=10V, ID=3A typ 3.3 Unit max 5 S ID=2A, VGS=10V ID=1A, VGS=4V 25 34 mΩ 52 75 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 510 pF Output Capacitance Coss VDS=10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 70 pF Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns Rise Time tr td(off) See specified Test Circuit. 74 ns See specified Test Circuit. 43 ns Turn-OFF Delay Time Fall Time tf Qg See specified Test Circuit. 37 ns VDS=10V, VGS=10V, ID=6A 11 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6A 1.9 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=6A 2.9 Diode Forward Voltage VSD IS=6A, VGS=0 Total Gate Charge Switching Time Test Circuit 1.2 10V 0V D1 D1 D2 D2 ID=3A RL=5Ω VIN D 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 VOUT PW=10µs D.C.≤1% G P.G ECH8606 50Ω S S1 ID -- VDS S2 (Top view) G2 ID -- VGS VDS=10V 9 5V 8 4 3 2 VGS=3V 7 6 5 4 3 Ta= 75°C --25 °C 25°C Drain Current, ID -- A 6V 8 V Drain Current, ID -- A 5 G1 10 4V 10V 6 V Electrical Connection VDD=15V VIN nC 0.85 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 120 0.5 IT05583 4.5 5.0 IT05584 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 100 80 ID=1A 2A 60 40 20 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 12 IT05585 70 =4V , VGS 60 A I D=1 50 40 10V , V S= I D=2A G 30 20 10 0 --50 --25 0 25 50 75 100 Ambient Temperature, Ta -- °C 125 150 IT05586 No.7406-2/4 ECH8606 °C --25 Ta= C 75° 3 2 25° C 1.0 7 5 2 2 3 5 7 2 1.0 3 5 7 2 10 IT05587 Drain Current, ID -- A 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT05588 Ciss, Coss, Crss -- VDS f=1MHz 7 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.5 1000 100 3 tf 2 td(on) 10 7 Ciss 5 3 2 Coss Crss 100 7 5 5 3 3 2 0.1 2 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC 12 IT05591 PD -- Ta 2.0 10 15 20 25 Drain-to-Source Voltage, VDS -- V VDS=10V ID=6A 9 5 IT05589 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0.4 2 VDD=15V VGS=10V 2 Allowable Power Dissipation, PD -- W 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 3 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 3 0.1 0.1 1.0 7 5 3 2 C 7 5 5°C 25° C 10 VGS=0 10 7 5 3 2 Ta= 7 2 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 IF -- VSD 3 2 VDS=10V --25° yfs -- ID 5 10 7 5 3 2 ASO IDP=40A <10µs 1m s ID=6A 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 30 IT05590 ms 10 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT05592 Mounted on a ceramic board(900mm2✕0.8mm) 1.8 1.6 1.5 1.4 1.3 1.2 To ta lD 1.0 iss 0.8 ipa 1u tio nit 0.6 n 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05582 No.7406-3/4 ECH8606 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2003. Specifications and information herein are subject to change without notice. PS No.7406-4/4