AP9928EO
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
▼ Capable of 2.5V gate drive
D2
▼ Optimal DC/DC battery application
S2
S1
TSSOP-8
G1
S1
BVDSS
20V
RDS(ON)
23mΩ
ID
D1
5A
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
5
A
ID@TA=70℃
3
3.5
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
25
A
PD@TA=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
200206031
AP9928EO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=5A
-
-
23
mΩ
VGS=2.5V, ID=2A
-
-
29
mΩ
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
VDS=10V, ID=5A
-
21
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=5A
-
15.9
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.4
-
nC
VDS=10V
-
6.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=4.5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
530
-
pF
Coss
Output Capacitance
VDS=20V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=5A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
Max. Units
AP9928EO
30
30
4.5V
3.5V
3.0V
2.5V
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
3.5V
3.0V
2.5V
20
V GS =2.0V
10
20
V GS =2.0V
10
T C =150 o C
T C =25 o C
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.9
I D = 5A
I D = 5A
V GS = 4.5V
T C =25 o C
1.5
RDS(ON) (mΩ )
Normalized R DS(ON)
65
35
1.1
0.7
0.3
5
1
2
3
4
5
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP9928EO
1.2
6
5
4
PD (W)
ID , Drain Current (A)
0.9
3
0.6
2
0.3
1
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100us
10
ID (A)
1ms
10ms
1
100ms
0.1
1s
o
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=208 oC/W
T C =25 C
Single Pulse
DC
0.001
0.01
0.1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP9928EO
f=1.0MHz
10000
8
I D =5A
VGS , Gate to Source Voltage (V)
7
6
V DS =10V
V DS =15V
V DS =20V
1000
Ciss
C (pF)
5
4
Coss
Crss
3
100
2
1
10
0
0
5
10
15
20
1
25
7
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
1.6
10
1.2
T j =25 o C
VGS(th) (V)
IS (A)
19
25
Fig 10. Typical Capacitance Characteristics
100
T j =150 o C
13
V DS (V)
1
0.8
0.4
0.1
0
0.01
0.2
0.5
0.8
1.1
-50
0
50
100
Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9928EO
VDS
RD
90%
VDS
D
RG
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
10%
VGS
S
+
VGS
4.5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
G
0.5 x RATED VDS
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q