AP9916GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D
▼ Capable of 2.5V gate drive
▼ Low drive current
BVDSS
18V
RDS(ON)
25mΩ
ID
G
35A
▼ Surface mount package
S
Description
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
D
S
S
TO-252
TO-251
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
18
V
VGS
Gate-Source Voltage
±8
V
ID@TC=25℃
Continuous Drain Current, VGS @ 4.5V
35
A
ID@TC=125℃
Continuous Drain Current, VGS @ 4.5V
16
A
1
IDM
Pulsed Drain Current
90
A
PD@TC=25℃
Total Power Dissipation
50
W
Linear Derating Factor
0.4
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200723011
AP9916GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
18
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
25
mΩ
VGS=2.5V, ID=5.2A
-
-
40
mΩ
VDS=VGS, ID=250uA
0.5
-
1
V
VDS=10V, ID=6A
-
18
-
S
VDS=18V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=18V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
ID=18A
-
17.5
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=18V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7.9
-
nC
VDS=10V
-
7.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
25.6
-
ns
tf
Fall Time
RD=0.56Ω
-
98
-
ns
Ciss
Input Capacitance
VGS=0V
-
527
-
pF
Coss
Output Capacitance
VDS=18V
-
258
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
112
-
pF
Min.
Typ.
-
-
35
A
-
-
90
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
1
Tj=25℃, IS=35A, VGS=0V
Max. Units
AP9916GH/J
80
100
T C =25 o C
T C =150 o C
V G =4.5V
V G =4.5V
70
80
60
ID , Drain Current (A)
ID , Drain Current (A)
V G =3.5V
60
V G =2.5V
40
V G =3.5V
50
40
V G =2.5V
30
20
20
V G =1.5V
10
0
0
1
2
3
4
5
6
V G =1.5V
0
7
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
1.8
30
I D =6A
I D= 6 A
o
V G =4.5V
1.6
T C =25 C
Normalized R DS(ON)
28
26
RDSON (mΩ )
2
V DS , Drain-to-Source Voltage (V)
24
1.4
1.2
1.0
22
0.8
20
0.6
18
-50
1
2
3
4
V GS (V)
5
6
0
50
100
T j , Junction Temperature ( o C)
v.s. Junction Temperature
150
AP9916GH/J
40
60
35
50
40
25
PD (W)
ID , Drain Current (A)
30
20
30
15
20
10
10
5
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
ID (A)
100
Normalized Thermal Response (R thjc)
10
10us
100us
1ms
10
10ms
100ms
1
1
DUTY=0.5
0.2
PDM
0.1
0.1
t
SINGLE PULSE
0.05
T
0.02
0.01
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
D=0.01 T c =25 o C
0.01
0.00001
0.1
0.1
1
10
V DS (V)
100
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
10
AP9916GH/J
I D =18A
14
Ciss
V DS =10V
12
Coss
V DS =15V
10
V DS =18V
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
16
8
Crss
100
6
4
2
0
10
0
5
10
15
20
25
30
35
40
45
1
5
9
13
17
21
25
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.2
100
0.95
10
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1
0.7
0.45
0.1
0.2
0.01
0
0.4
0.8
V SD (V)
Reverse Diode
1.2
1.6
-50
0
50
100
T j , Junction Temperature ( o C )
Junction Temperature
150
AP9916GH/J
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
5v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
5V
RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Q