2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 55 UNITS V 30 V Emitter-Base Voltage VEBO IC 3.5 V 0.4 A IB PD 2.0 A 5.0 W TJ, Tstg ΘJC -65 to +200 °C 35 °C/W Continuous Collector Current Continuous Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=28V ICEV ICEV MAX 20 UNITS μA IEBO VCE=55V, VBE(OFF)=1.5V VCE=30V, VBE(OFF)=1.5V, TC=200°C VEB=3.5V BVCER IC=5.0mA, RBE=10Ω 55 V BVCBO IC=500μA 55 V BVCEO IC=5.0mA 30 V BVEBO IE=100μA 3.5 V VCE(SAT) hFE IC=100mA, IB=20mA VCE=5.0V, IC=50mA (2N3866) VCE=5.0V, IC=50mA (2N3866A) 10 200 25 200 hFE hFE fT fT VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866) GPE VCE=15V, IC=50mA, f=200MHz (2N3866A) VCB=28V, IE=0, f=1.0MHz VCC=28V, Pout=1.0W, f=400MHz (Figure 1) η VCC=28V, Pout=1.0W, f=400MHz (Figure 1) Cob 0.1 mA 5.0 mA 0.1 mA 1.0 V 5.0 500 MHz 800 MHz 3.0 pF 10 dB 45 % R2 (15-September 2010) 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400MHz Test Circuit TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (15-September 2010) w w w. c e n t r a l s e m i . c o m