SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FZT491 ✪ C COMPLEMENTARY TYPE PARTMARKING DETAIL E FZT591 FZT491 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltage V(BR)CBO 80 TYP. MAX. V IC=100µA V(BR)CEO 60 V IC=10mA* V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=60V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Cut-Off ICES Current 100 nA VCES=60V Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC=500mA, IB =50mA* IC=1A, IB =100mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =1A, VCE =5V* Static Forward Current hFE 100 100 80 30 Transition Frequency fT 150 Output Capacitance Cobo IC=1mA, VCE =5V IC =500mA, VCE =5V* IC =1A, VCE =5V* IC = 2A, VCE =5V* 300 10 *Measured under pulsed conditions. Pulse width=300µs. For typical characteristics graphs see FMMT491 datasheet 3 - 189 MHz IC=50mA, VCE=10V, f =100MHz pF VCB=10V, f=1MHz