SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 NOVEMBER 1995 FZT493 ✪ C COMPLEMENTARY TYPE PARTMARKING DETAIL FZT593 E C FZT493 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages Cut-Off Currents SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. IC=100µA V(BR)CBO 120 V V(BR)CEO 100 V IC=10mA* V(BR)EBO 5 V IE=100µA ICBO 100 nA VCB=100V IEBO 100 nA VEB=4V ICES 100 nA VCES=100V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.6 V V IC=500mA, IB =50mA* IC=1A, IB =100mA* Base-Emitter Saturation Voltage VBE(sat) 1.15 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =1A, VCE =10V* Static Forward Current hFE 100 100 80 30 Transition Frequency fT 150 Output Capacitance Cobo IC=1mA, VCE =10V IC =250mA, VCE =10V* IC =500mA, VCE =10V* IC = 1A, VCE =10V* 300 10 MHz IC=50mA, VCE=10V, f =100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical Characteristics graphs see FMMT493 datasheet 3 - 190