BR800 - BR810 SILICON BRIDGE RECTIFIERS BR10 PRV : 50 - 1000 Volts Io : 8.0 Amperes 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) AC FEATURES : * * * * * * 0.77 (19.56) 0.73 (18.54) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) * Pb / RoHS Free MECHANICAL DATA : 0.75 (19.1) Min. * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams 0.30 (7.62) 0.25 (6.35) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc=50 ° C IF(AV) 8.0 A I FSM 300 A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I t 2 160 A 2S Maximum Forward Voltage per Diode at IF = 4.0 A VF 1.0 V IR 10 µA I R(H) 200 µA R θ JC 2.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Maximum DC Reverse Current Ta = 25 ° C at Rated DC Blocking Voltage Ta = 100 ° C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR800 - BR810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 12 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm ) Al.-PLATE 10 8 6 4 2 0 0 25 50 75 100 125 150 300 250 T J = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) 4 6 10 20 40 60 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 10 FORWARD CURRENT, AMPERES 2 NUMBER OF CYCLES AT 60Hz 10 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 T J = 25 °C 0.1 PER DIODE 10 T J = 100 °C 1.0 T J = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005