FREESCALE MC9S08QE8

Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MC9S08QE8
Rev. 7, 4/2009
An Energy Efficient Solution by Freescale
MC9S08QE8
MC9S08QE8 Series
Covers: MC9S08QE8 and
MC9S08QE4
Features
• 8-Bit HCS08 Central Processor Unit (CPU)
– Up to 20 MHz CPU at 3.6 V to 1.8 V across temperature range of
–40 °C to 85 °C
– HC08 instruction set with added BGND instruction
– Support for up to 32 interrupt/reset sources
• On-Chip Memory
– Flash read/program/erase over full operating voltage and
temperature
– Random-access memory (RAM)
– Security circuitry to prevent unauthorized access to RAM and
flash contents
• Power-Saving Modes
– Two low power stop modes
– Reduced power wait mode
– Low power run and wait modes allow peripherals to run while
voltage regulator is in standby
– Peripheral clock gating register can disable clocks to unused
modules, thereby reducing currents
– Very low power external oscillator that can be used in stop2 or
stop3 modes to provide accurate clock source to real time counter
– 6 μs typical wake-up time from stop3 mode
• Clock Source Options
– Oscillator (XOSC) — Loop-control Pierce oscillator; crystal or
ceramic resonator range of 31.25 kHz to 38.4 kHz or 1 MHz to
16 MHz
– Internal Clock Source (ICS) — Internal clock source module
containing a frequency-locked-loop (FLL) controlled by internal
or external reference; precision trimming of internal reference
allows 0.2% resolution and 2% deviation over temperature and
voltage; supporting bus frequencies from 1 MHz to 10 MHz
• System Protection
– Watchdog computer operating properly (COP) reset with option to
run from dedicated 1 kHz internal clock source or bus clock
– Low-voltage warning with interrupt
– Low-voltage detection with reset or interrupt
– Illegal opcode detection with reset
– Illegal address detection with reset
– Flash block protection
• Development Support
– Single-wire background debug interface
– Breakpoint capability to allow single breakpoint setting during
in-circuit debugging (plus two more breakpoints in on-chip debug
module)
20-Pin SOIC
751D-07
32-Pin LQFP
Case 873A
16-Pin PDIP
648
28-Pin SOIC
751F-05
– On-chip in-circuit emulator (ICE) debug module containing two
comparators and nine trigger modes; eight deep FIFO for storing
change-of-flow addresses and event-only data; debug module
supports both tag and force breakpoints
• Peripherals
– ADC — 10-channel, 12-bit resolution; 2.5 μs conversion time;
automatic compare function; 1.7 mV/°C temperature sensor;
internal bandgap reference channel; operation in stop3; fully
functional from 3.6 V to 1.8 V
– ACMPx — Two analog comparators with selectable interrupt on
rising, falling, or either edge of comparator output; compare
option to fixed internal bandgap reference voltage; outputs can be
optionally routed to TPM module; operation in stop3
– SCI — Full-duplex non-return to zero (NRZ); LIN master
extended break generation; LIN slave extended break detection;
wake-up on active edge
– SPI — Full-duplex or single-wire bidirectional; double-buffered
transmit and receive; master or slave mode; MSB-first or
LSB-first shifting
– IIC — Up to 100 kbps with maximum bus loading; multi-master
operation; programmable slave address; interrupt driven
byte-by-byte data transfer; supporting broadcast mode and 10-bit
addressing
– TPMx — Two 3-channel (TPM1 and TPM2); selectable input
capture, output compare, or buffered edge- or center-aligned
PWM on each channel
– RTC — (Real-time counter) 8-bit modulus counter with binary or
decimal based prescaler; external clock source for precise time
base, time-of-day, calendar or task scheduling functions; free
running on-chip low power oscillator (1 kHz) for cyclic wakeup
without external components; runs in all MCU modes
• Input/Output
– 26 GPIOs, one output-only pin and one input-only pin
– Eight KBI interrupts with selectable polarity
– Hysteresis and configurable pullup device on all input pins;
configurable slew rate and drive strength on all output pins.
• Package Options
– 32-pin LQFP, 28-pin SOIC, 20-pin SOIC, 16-pin PDIP,
16-pin TSSOP
This document contains information on a product under development. Freescale reserves the
right to change or discontinue this product without notice.
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.
16-Pin TSSOP
948F
Table of Contents
1
2
3
MCU Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2 Parameter Classification. . . . . . . . . . . . . . . . . . . . 7
3.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 8
3.4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . 8
3.5 ESD Protection and Latch-Up Immunity. . . . . . . 10
3.6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 11
3.7 Supply Current Characteristics. . . . . . . . . . . . . . 14
3.8 External Oscillator (XOSCVLP) Characteristics . 17
3.9 Internal Clock Source (ICS) Characteristics . . . . 18
3.10 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 20
3.10.1Control Timing . . . . . . . . . . . . . . . . . . . . . 20
3.10.2TPM Module Timing. . . . . . . . . . . . . . . . . 21
3.10.3SPI Timing . . . . . . . . . . . . . . . . . . . . . . . . 22
3.11 Analog Comparator (ACMP) Electricals. . . . . . . 24
3.12 ADC Characteristics. . . . . . . . . . . . . . . . . . . . . . 25
3.13 Flash Specifications . . . . . . . . . . . . . . . . . . . . . . 29
3.14 EMC Performance . . . . . . . . . . . . . . . . . . . . . . . 29
3.14.1Conducted Transient Susceptibility . . . . . 30
4 Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . 30
5 Package Information. . . . . . . . . . . . . . . . . . . . . . . . . . 31
5.1 Mechanical Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Revision History
To provide the most up-to-date information, the revision of our documents on the World Wide Web will
be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
available, refer to:
http://freescale.com/
The following revision history table summarizes changes contained in this document.
Rev
Date
Description of Changes
2
Nov 7 2007
Initial preliminary product preview release.
3
Jan 22 2008
4
March 13 2008
Added Figure 11.
Initial public release.
5
October 8 2008
Updated the Stop2 and Stop3 mode supply current in the Table 8.
Replaced the stop mode adders section from Table 8 with an individual Table 9 with new
specifications.
Added a footnote to the Min. of the suppply voltage in Table 7.
Changed the typical value of |IIn| and |IOZ| to — (no typical value) in Table 7.
Added tVRR to Table 12.
Updated “How to reach us” information.
6
Nov. 4 2008
7
April 29 2009
Updated the operating voltage in Table 7.
Changed VDDAD to VDDA, IDDAD to IDDA, and VSSAD to VSSA.
In Table 7, added |IOZTOT|.
In Table 11, updated the DCO output frequency range-trimmed, and changed some symbols.
Updated typicals and Max. for tIRST.
Updated Table 17.
Related Documentation
Find the most current versions of all documents at: http://www.freescale.com
Reference Manual
(MC9S08QE8RM)
Contains extensive product information including modes of operation, memory,
resets and interrupts, register definition, port pins, CPU, and all module
information.
MC9S08QE8 Series Data Sheet, Rev. 7
2
Freescale Semiconductor
MCU Block Diagram
1
MCU Block Diagram
The block diagram, Figure 1, shows the structure of MC9S08QE8 series MCU.
BKGD/MS
HCS08 CORE
DEBUG MODULE (DBG)
BDC
REAL-TIME COUNTER
(RTC)
HCS08 SYSTEM CONTROL
IRQ
SERIAL COMMUNICATIONS
INTERFACE MODULE (SCI)
LVD
USER FLASH
(MC9S08QE8 = 8192 BYTES)
(MC9S08QE4 = 4096 BYTES)
SERIAL PERIPHERAL
INTERFACE MODULE (SPI)
USER RAM
(MC9S08QE8 = 512 BYTES)
(MC9S08QE4 = 256 BYTES)
16-BIT TIMER PWM
MODULE (TPM1)
20 MHz INTERNAL CLOCK
SOURCE (ICS)
LOW-POWER OSCILLATOR
31.25 kHz to 38.4 kHz
1 MHz to 16 MHz
(XOSCVLP)
16-BIT TIMER PWM
MODULE (TPM2)
EXTAL
XTAL
VSSA
VDDA
VSS
VDD
VOLTAGE REGULATOR
VSSA
VDDA
RxD
TxD
PORT A
IRQ
SDA
SS
MISO
MOSI
SPSCK
TCLK
TPM1CH0
TPM1CH1
PTA7/TPM2CH2/ADP9
PTA6/TPM1CH2/ADP8
PTA5/IRQ/TCLK/RESET
PTA4/ACMP1O/BKGD/MS
PTA3/KBIP3/SCL/ADP3
PTA2/KBIP2/SDA/ADP2
PTA1/KBIP1/TPM2CH0/ADP1/ACMP1–
PTA0/KBIP0/TPM1CH0/ADP0/ACMP1+
PTB7/SCL/EXTAL
PTB6/SDA/XTAL
PTB5/TPM1CH1/SS
PORT B
COP
IIC MODULE (IIC)
PTB4/TPM2CH1/MISO
PTB3/KBIP7/MOSI/ADP7
PTB2/KBIP6/SPSCK/ADP6
PTB1/KBIP5/TxD/ADP5
TPM1CH2
PTB0/KBIP4/RxD/ADP4
TCLK
TPM2CH0
PTC7/ACMP2–
TPM2CH1
PTC6/ACMP2+
TPM2CH2
PTC5/ACMP2O
ANALOG COMPARATOR
(ACMP1)
ACMP1O
ACMP1–
ACMP1+
ANALOG COMPARATOR
(ACMP2)
ACMP2O
ACMP2–
ACMP2+
PORT C
RESETS AND INTERRUPTS
MODES OF OPERATION
POWER MANAGEMENT
SCL
PTC4
PTC3
PTC2
PTC1/TPM2CH2
PTC0/TPM1CH2
PTD3
VSSA/VREFL
VDDA/VREFH
VREFL
VREFH
12-BIT
ANALOG-TO-DIGITAL
CONVERTER (ADC12)
ADP9–ADP0
KEYBOARD INTERRUPT
MODULE (KBI)
KBIP7–KBIP0
PORT D
CPU
PTD2
PTD1
PTD0
pins not available on 16-pin packages
pins not available on 16-pin or 20-pin packages
pins not available on 16-pin, 20-pin or 28-pin packages
Notes: When PTA5 is configured as RESET, pin becomes bi-directional with output being open-drain drive containing an internal pullup device.
When PTA4 is configured as BKGD, pin becomes bi-directional.
For the 16-pin and 20-pin packages, VSSA/VREFL and VDDA/VREFH are double bonded to VSS and VDD respectively.
Figure 1. MC9S08QE8 Series Block Diagram
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
3
Pin Assignments
2
Pin Assignments
PTA4/ACMP1O/BKGD/MS
PTA5/IRQ/TCLK/RESET
PTC4
PTC5/ACMP2O
PTC6/ACMP2+
PTC7/ACMP2–
PTA0/KBIP0/TPM1CH0/ADP0/ACMP1+
PTA1/KBIP1/TPM2CH0ADP1/ACMP1–
This section shows the pin assignments for the MC9S08QE8 series devices.
32
31
30
29
28
27
26
25
PTD1 1
24 PTA2/KBIP2/SDA/ADP2
PTD0 2
23 PTA3/KBIP3/SCL/ADP3
VDD 3
22 PTD2
VDDA/VREFH 4
21 PTD3
VSSA/VREFL 5
20 PTA6/TPM1CH2/ADP8
VSS 6
19 PTA7/TPM2CH2/ADP9
9
10
11
12
13
14
15
16
PTC2
PTC1/TPM2CH2
PTC0/TPM1CH2
PTB3/KBIP7/MOSI/ADP7
PTB2/KBIP6/SPSCK/ADP6
17 PTB1/KBIP5/TxD/ADP5
PTC3
PTB6/SDA/XTAL 8
PTB4/TPM2CH1/MISO
18 PTB0/KBIP4/RxD/ADP4
PTB5/TPM1CH1/SS
PTB7/SCL/EXTAL 7
Pins shown in bold type are lost in the next lower pin count package.
Figure 2. MC9S08QE8 Series in 32-Pin LQFP Package
MC9S08QE8 Series Data Sheet, Rev. 7
4
Freescale Semiconductor
Pin Assignments
PTC5/ACMP2O
1
28
PTC6/ACMP2+
PTC4
2
27
PTC7/ACMP2–
PTA5/IRQ/TCLK/RESET
3
26
PTA0/KBIP0/TPM1CH0/ADP0/ACMP1+
PTA4/ACMP1O/BKGD/MS
4
25
PTA1/KBIP1/TPM2CH0/ADP1/ACMP1–
VDD
5
24
PTA2/KBIP2/SDA/ADP2
VDDA/VREFH
6
23
PTA3/KBIP3/SCL/ADP3
VSSA/VREFL
7
22
PTA6/TPM1CH2/ADP8
VSS
8
21
PTA7/TPM2CH2/ADP9
PTB7/SCL/EXTAL
9
20
PTB0/KBIP4/RxD/ADP4
PTB6/SDA/XTAL
10
19
PTB1/KBIP5/TxD/ADP5
PTB5/TPM1CH1/SS
11
18
PTB2/KBIP6/SPSCK/ADP6
PTB4/TPM2CH1/MISO
12
17
PTB3/KBIP7/MOSI/ADP7
PTC3
13
16
PTC0/TPM1CH2
PTC2
14
15
PTC1/TPM2CH2
Pins shown in bold type are lost in the next lower pin count package.
Figure 3. MC9S08QE8 Series in 28-pin SOIC Package
PTA5/IRQ/TCLK/RESET
1
20
PTA0/KBIP0/TPM1CH0/ADP0/ACMP1+
PTA4/ACMP1O/BKGD/MS
2
19
PTA1/KBIP1/TPM2CH0/ADP1/ACMP1–
VDD
3
18
PTA2/KBIP2/SDA/ADP2
VSS
4
17
PTA3/KBIP3/SCL/ADP3
PTB7/SCL/EXTAL
5
16
PTB0/KBIP4/RxD/ADP4
PTB6/SDA/XTAL
6
15
PTB1/KBIP5/TxD/ADP5
PTB5/TPM1CH1/SS
7
14
PTB2/KBIP6/SPSCK/ADP6
PTB4/TPM2CH1/MISO
8
13
PTB3/KBIP7/MOSI/ADP7
PTC3
9
12
PTC0/TPM1CH2
PTC2
10
11
PTC1/TPM2CH2
Pins shown in bold type are lost in the next lower pin count package.
Figure 4. MC9S08QE8 Series in 20-pin SOIC Package
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
5
Pin Assignments
PTA5/IRQ/TCLK/RESET
1
16
PTA0/KBIP0/TPM1CH0/ADP0/ACMP1+
PTA4/ACMP1O/BKGD/MS
2
15
PTA1/KBIP1/TPM2CH0ADP1/ACMP1–
VDD
3
14
PTA2/KBIP2/SDA/ADP2
VSS
4
13
PTA3/KBIP3/SCL/ADP3
PTB7/SCL/EXTAL
5
12
PTB0/KBIP4/RxD/ADP4
PTB6/SDA/XTAL
6
11
PTB1/KBIP5/TxD/ADP5
PTB5/TPM1CH1/SS
7
10
PTB2/KBIP6/SPSCK/ADP6
PTB4/TPM2CH1/MISO
8
9
PTB3/KBIP7/MOSI/ADP7
Figure 5. MC9S08QE8 Series in 16-pin PDIP and TSSOP Packages
Table 1. Pin Availability by Package Pin-Count
Pin Number
<-- Lowest
--> Highest
Alt 2
Alt 3
32
28
20
16
1
—
—
—
PTD1
2
—
—
—
PTD0
3
5
3
3
VDD
4
6
—
—
VDDA/VREFH
5
7
—
—
VSSA/VREFL
6
8
4
4
7
9
5
5
Port Pin
Priority
Alt 1
VSS
PTB7
SCL1
1
8
10
6
6
PTB6
EXTAL
XTAL
SDA
9
11
7
7
PTB5
TPM1CH1
SS
10
12
8
8
PTB4
TPM2CH1
MISO
11
13
9
—
PTC3
12
14
10
—
PTC2
13
15
11
—
PTC1
TPM2CH22
14
16
12
—
PTC0
TPM1CH23
15
17
13
9
PTB3
KBIP7
MOSI
ADP7
16
18
14
10
PTB2
KBIP6
SPSCK
ADP6
17
19
15
11
PTB1
KBIP5
TxD
ADP5
18
20
16
12
PTB0
KBIP4
RxD
ADP4
19
21
—
—
Alt 4
PTA7
20
22
—
—
PTA6
21
—
—
—
PTD3
22
—
—
—
PTD2
23
23
17
13
PTA3
2
ADP9
3
ADP8
TPM2CH2
TPM1CH2
KBIP3
SCL1
ADP3
1
ADP2
24
24
18
14
PTA2
KBIP2
SDA
25
25
19
15
PTA1
KBIP1
TPM2CH0 ADP14
ACMP1–4
MC9S08QE8 Series Data Sheet, Rev. 7
6
Freescale Semiconductor
Electrical Characteristics
Table 1. Pin Availability by Package Pin-Count (continued)
Pin Number
32
28
20
<-- Lowest
16
Port Pin
Alt 1
KBIP0
Priority
--> Highest
Alt 2
Alt 3
TPM1CH0
ADP04
Alt 4
ACMP1+4
26
26
20
16
PTA0
27
27
—
—
PTC7
ACMP2–
28
28
—
—
PTC6
ACMP2+
29
1
—
—
PTC5
ACMP2O
30
2
—
—
PTC4
31
3
1
1
PTA5
IRQ
TCLK
RESET
32
4
2
2
PTA4
ACMP1O
BKGD
MS
1
IIC pins, SCL and SDA can be repositioned using IICPS in SOPT2, default reset locations
are PTA3 and PTA2.
2 TPM2CH2 pin can be repositioned using TPM2CH2PS in SOPT2, default reset location is
PTA7.
3 TPM1CH2 pin can be repositioned using TPM1CH2PS in SOPT2, default reset location is
PTA6.
4 If ADC and ACMP1 are enabled, both modules will have access to the pin.
3
Electrical Characteristics
3.1
Introduction
This section contains electrical and timing specifications for the MC9S08QE8 series of microcontrollers
available at the time of publication.
3.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the
customer a better understanding the following classification is used and the parameters are tagged
accordingly in the tables where appropriate:
Table 2. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant
sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the parameter
tables where appropriate.
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
7
Electrical Characteristics
3.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not
guaranteed. Stress beyond the limits specified in Table 3 may affect device reliability or cause permanent
damage to the device. For functional operating conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD) or the programmable
pullup resistor associated with the pin is enabled.
Table 3. Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Supply voltage
VDD
–0.3 to 3.8
V
Maximum current into VDD
IDD
120
mA
Digital input voltage
VIn
–0.3 to VDD + 0.3
V
Instantaneous maximum current
Single pin limit (applies to all port pins)1, 2, 3
ID
±25
mA
Tstg
–55 to 150
°C
Storage temperature range
1
Input must be current limited to the value specified. To determine the value of the required
current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp
voltages, then use the larger of the two resistance values.
2 All functional non-supply pins, except for PTA5 are internally clamped to V
SS and VDD.
3 Power supply must maintain regulation within operating V
DD range during instantaneous and
operating maximum current conditions. If positive injection current (VIn > VDD) is greater than
IDD, the injection current may flow out of VDD and could result in external power supply going
out of regulation. Ensure external VDD load will shunt current greater than maximum injection
current. This will be the greatest risk when the MCU is not consuming power. Examples are: if
no system clock is present, or if the clock rate is very low (which would reduce overall power
consumption).
3.4
Thermal Characteristics
This section provides information about operating temperature range, power dissipation, and package
thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in
on-chip logic and voltage regulator circuits, and it is user-determined rather than being controlled by the
MCU design. To take PI/O into account in power calculations, determine the difference between actual pin
voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of unusually high
pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small.
MC9S08QE8 Series Data Sheet, Rev. 7
8
Freescale Semiconductor
Electrical Characteristics
Table 4. Thermal Characteristics
Rating
Operating temperature range
(packaged)
Maximum junction temperature
Symbol
Value
Unit
TA
TL to TH
–40 to 85
°C
TJM
95
°C
Thermal resistance
Single-layer board
32-pin LQFP
66
28-pin SOIC
57
θJA
20-pin SOIC
71
16-pin PDIP
64
16-pin TSSOP
108
°C/W
Thermal resistance
Four-layer board
32-pin LQFP
47
28-pin SOIC
42
θJA
20-pin SOIC
52
16-pin PDIP
47
16-pin TSSOP
78
°C/W
The average chip-junction temperature (TJ) in °C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273 °C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273 °C) + θJA × (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
9
Electrical Characteristics
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 5. ESD and Latch-up Test Conditions
Model
Human
Body
Machine
Description
Symbol
Value
Unit
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
—
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
—
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
Latch-up
Table 6. ESD and Latch-Up Protection Characteristics
No.
1
Rating1
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Machine model (MM)
VMM
±200
—
V
3
Charge device model (CDM)
VCDM
±500
—
V
4
Latch-up current at TA = 85 °C
ILAT
±100
—
mA
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
MC9S08QE8 Series Data Sheet, Rev. 7
10
Freescale Semiconductor
Electrical Characteristics
3.6
DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 7. DC Characteristics
Num C
Characteristic
Symbol
Condition
Min.
Typical1
Max.
Unit
3.6
V
Operating voltage
1
All I/O pins,
low-drive strength
C
2
P
Output high
voltage
C
3
D
Output high
current
P
All I/O pins,
high-drive strength
Max total IOH for all ports
VOH
IOHT
All I/O pins,
low-drive strength
C
4
2.02
1.8
VDD rising
VDD falling
Output low
voltage
C
Output low
current
5
D
6
P Input high
C voltage
7
P Input low
C voltage
8
C
9
Input
P leakage
current
10
Hi-Z
(off-state)
P
leakage
current
11
Total
leakage
combined
P
for all inputs
and Hi-Z
pins
12a
Pullup,
P pulldown
resistors
Input
hysteresis
All I/O pins,
high-drive strength
VOL
Max total IOL for all ports
IOLT
All digital inputs
VIH
VDD > 1.8 V,
ILoad = –2 mA
VDD – 0.5
—
—
VDD > 2.7 V,
ILoad = –10 mA
VDD – 0.5
—
—
VDD > 1.8V,
ILoad = –2 mA
VDD – 0.5
—
—
—
—
—
100
VDD > 1.8 V,
ILoad = 0.6 mA
—
—
0.5
VDD > 2.7 V,
ILoad = 10 mA
—
—
0.5
VDD > 1.8 V,
ILoad = 3 mA
—
—
0.5
—
—
—
100
VDD > 2.7 V
0.70 × VDD
—
—
VDD > 1.8 V
0.85 × VDD
—
—
VDD > 2.7 V
—
—
0.35 × VDD
VDD > 1.8 V
—
—
0.30 × VDD
V
mA
V
mA
V
All digital inputs
VIL
All digital inputs
Vhys
—
0.06 x VDD
—
—
mV
All input only pins
(per pin)
|IIn|
VIn = VDD or VSS
—
—
1
μA
All input/output
(per pin)
|IOZ|
VIn = VDD or VSS
—
—
1
μA
VIn = VDD or VSS
—
—
2
μA
17.5
—
52.5
kΩ
All input only and I/O |IOZTOT|
All digital inputs, when
enabled (all I/O pins other
than
PTA5/IRQ/TCLK/RESET
RPU,
RPD
—
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
11
Electrical Characteristics
Table 7. DC Characteristics (continued)
Num C
12b
13
Characteristic
Pullup,
C pulldown
resistors
DC injection
C current 4, 5,
6
Symbol
(PTA5/IRQ/TCLK/RESET)
Condition
RPU,
RPD
3
—
Min.
Typical1
Max.
Unit
17.5
—
52.5
kΩ
–0.2
—
0.2
mA
–5
—
5
mA
(Note )
Single pin limit
Total MCU limit, includes
sum of all stressed pins
14
C Input capacitance, all pins
15
C RAM retention voltage
7
IIC
VIN < VSS, VIN > VDD
CIn
—
—
—
8
pF
VRAM
—
—
0.6
1.0
V
—
0.9
1.4
2.0
V
16
C POR re-arm voltage
VPOR
17
D POR re-arm time
tPOR
—
10
—
—
μs
1.80
1.88
1.84
1.92
1.88
1.96
V
18
P Low-voltage detection threshold
VLVD
VDD falling
VDD rising
19
P Low-voltage warning threshold
VLVW
VDD falling
VDD rising
2.08
2.14
2.24
V
20
P
Vhys
—
—
80
—
mV
21
P Bandgap voltage reference8
VBG
—
1.15
1.17
1.18
V
1
2
3
4
5
6
7
8
Low-voltage inhibit reset/recover
hysteresis
Typical values are measured at 25 °C. Characterized, not tested
As the supply voltage rises, the LVD circuit will hold the MCU in reset until the supply has risen above VLVDL.
The specified resistor value is the actual value internal to the device. The pullup or pulldown value may appear higher when
measured externally on the pin.
All functional non-supply pins, except for PTA5 are internally clamped to VSS and VDD.
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current greater than maximum
injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is
present, or if clock rate is very low (which would reduce overall power consumption).
Maximum is highest voltage that POR is guaranteed.
Factory trimmed at VDD = 3.0 V, Temp = 25 °C
MC9S08QE8 Series Data Sheet, Rev. 7
12
Freescale Semiconductor
Electrical Characteristics
PULLUP RESISTOR TYPICALS
85°C
25°C
–40°C
35
PULLDOWN RESISTANCE (kΩ)
PULL-UP RESISTOR (kΩ)
40
30
25
20
1.8
2
2.2
2.4
2.6 2.8
VDD (V)
3
3.2
3.4
85°C
25°C
–40°C
35
30
25
20
3.6
PULLDOWN RESISTOR TYPICALS
40
1.8
2.3
2.8
VDD (V)
3.3
3.6
Figure 6. Pullup and Pulldown Typical Resistor Values (VDD = 3.0 V)
TYPICAL VOL VS IOL AT VDD = 3.0 V
1.2
85°C
25°C
–40°C
1
0.15
VOL (V)
0.8
VOL (V)
TYPICAL VOL VS VDD
0.2
0.6
0.4
0.2
0.1
85°C, IOL = 2 mA
25°C, IOL = 2 mA
–40°C, IOL = 2 mA
0.05
0
0
0
5
10
IOL (mA)
15
1
20
2
VDD (V)
3
4
Figure 7. Typical Low-Side Driver (Sink) Characteristics — Low Drive (PTxDSn = 0)
TYPICAL VOL VS VDD
TYPICAL VOL VS IOL AT VDD = 3.0 V
1
0.4
85°C
25°C
–40°C
0.8
85°C
25°C
–40°C
0.3
VOL (V)
VOL (V)
0.6
0.4
0.2
0
0.2
IOL = 10 mA
IOL = 6 mA
0.1
IOL = 3 mA
0
0
10
20
30
1
2
3
4
VDD (V)
IOL (mA)
Figure 8. Typical Low-Side Driver (Sink) Characteristics — High Drive (PTxDSn = 1)
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
13
Electrical Characteristics
TYPICAL VDD – VOH VS IOH AT VDD = 3.0 V
1.2
85°C
25°C
–40°C
85°C, IOH = 2 mA
25°C, IOH = 2 mA
–40°C, IOH = 2 mA
0.2
VDD – VOH (V)
VDD – VOH (V)
1
TYPICAL VDD – VOH VS VDD AT SPEC IOH
0.25
0.8
0.6
0.4
0.15
0.1
0.05
0.2
0
0
0
–5
–10
IOH (mA))
–15
–20
1
2
3
VDD (V)
4
Figure 9. Typical High-Side (Source) Characteristics — Low Drive (PTxDSn = 0)
TYPICAL VDD – VOH VS VDD AT SPEC IOH
0.4
TYPICAL VDD – VOH VS IOH AT VDD = 3.0 V
0.3
85°C
25°C
–40°C
0.6
VDD – VOH (V)
VDD – VOH (V)
0.8
0.4
0.2
0
0
–5
–10
–15
–20
IOH (mA)
85°C
25°C
–40°C
–25
0.2
IOH = –10 mA
IOH = –6 mA
0.1
IOH = –3 mA
0
–30
1
2
3
4
VDD (V)
Figure 10. Typical High-Side (Source) Characteristics — High Drive (PTxDSn = 1)
3.7
Supply Current Characteristics
This section includes information about power supply current in various operating modes.
Table 8. Supply Current Characteristics
Num
C
P
1
T
T
2
T
Parameter
Symbol
RIDD
Run supply current
FEI mode, all modules off
RIDD
T
1 MHz
3
16 kHz
FBILP
RIDD
T
4
1 MHz
3
10 MHz
Run supply current
LPRS = 0, all modules off
T
VDD
(V)
10 MHz
Run supply current
FEI mode, all modules on
T
3
Bus
Freq
Run supply current
LPRS = 1, all modules off; running
from flash
Max
Unit
Temp
(°C)
5.60
8.2
mA
–40 to 85 °C
0.80
—
3.60
—
mA
–40 to 85 °C
0.51
—
165
—
μA
–40 to 85 °C
μA
–40 to 85 °C
3
16 kHz
FBELP
16 kHz
FBILP
RIDD
Typical1
105
—
77
—
3
16 kHz
FBELP
21
—
MC9S08QE8 Series Data Sheet, Rev. 7
14
Freescale Semiconductor
Electrical Characteristics
Table 8. Supply Current Characteristics (continued)
Num
T
5
T
T
6
T
7
Parameter
C
T
Symbol
VDD
(V)
16 kHz
FBILP
Run supply current
LPRS = 1, all modules off; running
from RAM
RIDD
Wait mode supply current
FEI mode, all modules off
WIDD
Wait mode supply current
LPRS = 1, all modules off
WIDD
16 kHz
FBELP
Temp
(°C)
μA
–40 to 85 °C
μA
–40 to 85 °C
μA
–40 to 85 °C
570
—
290
—
1
—
0.3
0.65
–40 to 25 °C
0.5
0.8
70 °C
—
1
2.5
—
0.25
0.50
–40 to 25 °C
0.3
0.6
70 °C
1 MHz
16 kHz
FBELP
—
C
—
3
C
S2IDD
77
Unit
—
—
Stop2 mode supply current
Max
7.3
10 MHz
P
Typical1
3
P
8
3
3
85 °C
—
C
—
0.7
2.0
85 °C
P
—
0.4
0.8
–40 to 25 °C
C
—
1.0
1.8
70 °C
—
3
6
—
0.35
0.60
–40 to 25 °C
0.8
1.5
70 °C
2.5
5.5
85 °C
P
C
Stop3 mode supply current
no clocks active
S3IDD
C
—
C
—
2
μA
C
9
1
Bus
Freq
3
2
μA
85 °C
Data in Typical column was characterized at 3.0 V, 25°C or is typical recommended value.
Table 9. Stop Mode Adders
Temperature
Num
1
C
Parameter
1
T
LPO
2
T
ERREFSTEN
Condition
—
RANGE = HGO = 0
Units
–40°C
25°C
70°C
85°C
50
75
100
150
nA
1000
1000
1100
1500
nA
3
T
IREFSTEN
—
63
70
77
81
μA
4
T
RTC
Does not include clock source
current
50
75
100
150
nA
5
T
LVD1
LVDSE = 1
90
100
110
115
μA
6
T
ACMP1
Not using the bandgap (BGBE = 0)
18
20
22
23
μA
7
T
ADC1
ADLPC = ADLSMP = 1
Not using the bandgap (BGBE = 0)
95
106
114
120
μA
1
Not available in stop2 mode.
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
15
Electrical Characteristics
5.000
4.500
4.000
3.500
TBD
IDD (mA)
3.000
FEI: 10 MHz
FBELP: 10 MHz
FEI: 5 MHz
2.500
FBELP: 5 MHz
FEI: 1 MHz
FBELP: 1 MHz
2.000
1.500
1.000
0.500
0.000
1.8
2
2.2
2.4
2.6
2.8
3
VDD (V)
Figure 11. Typical Run IDD for FBE and FEI, IDD vs. VDD
(ADC off, All Other Modules Enabled)
MC9S08QE8 Series Data Sheet, Rev. 7
16
Freescale Semiconductor
Electrical Characteristics
3.8
External Oscillator (XOSCVLP) Characteristics
Refer to Figure 12 and Figure 13 for crystal or resonator circuits.
Table 10. XOSCVLP Specifications (Temperature Range = –40 to 85°C Ambient)
Num
C
Characteristic
1
Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1)
Low range (RANGE = 0)
C
High range (RANGE = 1), high gain (HGO = 1), FBELP mode
High range (RANGE = 1), low power (HGO = 0), FBELP mode
2
D
3
Feedback resistor
Low range, low power (RANGE = 0, HGO = 0)2
D
Low range, high gain (RANGE = 0, HGO = 1)
High range (RANGE = 1, HGO = X)
4
Series resistor —
Low range, low power (RANGE = 0, HGO = 0)2
Low range, high gain (RANGE = 0, HGO = 1)
High range, low power (RANGE = 1, HGO = 0)
D
High range, high gain (RANGE = 1, HGO = 1)
≥ 8 MHz
4 MHz
1 MHz
5
6
Load capacitors
Low range (RANGE=0), low power (HGO = 0)
Other oscillator settings
Crystal start-up time4
Low range, low power
Low range, high gain
C
High range, low power
High range, high gain
D
Symbol
Min.
flo
fhi
fhi
32
1
1
RS
t
t
Square wave input clock frequency (EREFS = 0, ERCLKEN = 1)
FEE mode
CSTL
CSTH
fextal
FBE or FBELP mode
—
—
—
38.4
16
8
Unit
kHz
MHz
MHz
See Note 2
See Note 3
C1,C2
RF
Typical1 Max.
—
—
—
—
10
1
—
—
—
—
—
—
—
100
0
—
—
—
—
—
—
0
0
0
0
10
20
—
—
—
—
600
400
5
15
—
—
—
—
ms
0.03125
0
—
—
20
20
MHz
MHz
MΩ
kΩ
Data in Typical column was characterized at 3.0 V, 25 °C or is typical recommended value.
Load capacitors (C1,C2), feedback resistor (RF) and series resistor (RS) are incorporated internally when RANGE = HGO = 0.
3 See crystal or resonator manufacturer’s recommendation.
4
Proper PC board layout procedures must be followed to achieve specifications.
1
2
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
17
Electrical Characteristics
XOSCVLP
EXTAL
XTAL
RF
RS
Crystal or Resonator
C1
C2
Figure 12. Typical Crystal or Resonator Circuit: High Range and Low Range/High Gain
XOSCVLP
EXTAL
XTAL
Crystal or Resonator
Figure 13. Typical Crystal or Resonator Circuit: Low Range/Low Power
3.9
Internal Clock Source (ICS) Characteristics
Table 11. ICS Frequency Specifications (Temperature Range = –40 to 85°C Ambient)
Symbol
Min.
Typical1
Max.
Unit
Average internal reference frequency — factory trimmed
at VDD = 3.6 V and temperature = 25 °C
fint_t
—
32.768
—
kHz
P
Internal reference frequency — user trimmed
fint_ut
31.25
—
39.06
kHz
3
T
Internal reference start-up time
tIRST
—
5
10
μs
4
P
DCO output frequency range —
trimmed2
fdco_t
16
—
20
MHz
5
P
DCO output frequency2
Reference = 32768 Hz and DMX32 = 1
fdco_DMX32
—
19.92
—
MHz
6
C
Resolution of trimmed DCO output frequency at fixed
voltage and temperature (using FTRIM)
Δfdco_res_t
—
±0.1
±0.2
%fdco
Num
C
1
P
2
Characteristic
Low range
(DRS = 00)
MC9S08QE8 Series Data Sheet, Rev. 7
18
Freescale Semiconductor
Electrical Characteristics
Table 11. ICS Frequency Specifications (Temperature Range = –40 to 85°C Ambient) (continued)
Num
C
Characteristic
7
C
Resolution of trimmed DCO output frequency at fixed
voltage and temperature (not using FTRIM)
8
C
Total deviation of DCO output from trimmed frequency3
Over full voltage and temperature range
Over fixed voltage and temperature range of 0 to 70 °C
10
C FLL acquisition time4
11
C
Long term jitter of DCO output clock (averaged over 2-ms
interval)5
Symbol
Min.
Typical1
Max.
Unit
Δfdco_res_t
—
± 0.2
± 0.4
%fdco
Δfdco_t
—
–1.0 to 0.5
±0.5
±2
±1
%fdco
tAcquire
—
—
1
ms
CJitter
—
0.02
0.2
%fdco
Data in Typical column was characterized at 3.0 V, 25 °C or is typical recommended value.
The resulting bus clock frequency should not exceed the maximum specified bus clock frequency of the device.
3 This parameter is characterized and not tested on each device.
4
This specification applies to any time the FLL reference source or reference divider is changed, trim value changed or
changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used
as the reference, this specification assumes it is already running.
5 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum f
Bus.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise
injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage
for a given interval.
1
2
1.00%
0.50%
Deviation (%)
0.00%
-60
-40
-20
0
20
40
60
80
100
120
-0.50%
-1.00%
TBD
-1.50%
-2.00%
Temperature
Figure 14. Deviation of DCO Output from Trimmed Frequency (20 MHz, 3.0 V)
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
19
Electrical Characteristics
3.10
AC Characteristics
This section describes timing characteristics for each peripheral system.
3.10.1
Control Timing
Table 12. Control Timing
Symbol
Min
Typical1
Max
Unit
Bus frequency (tcyc = 1/fBus)
fBus
dc
—
10
MHz
D
Internal low power oscillator period
tLPO
700
—
1300
μs
3
D
External reset pulse width2
textrst
100
—
—
ns
4
D
Reset low drive
trstdrv
34 × tcyc
—
—
ns
5
D
BKGD/MS setup time after issuing background debug
force reset to enter user or BDM modes
tMSSU
500
—
—
ns
6
D
BKGD/MS hold time after issuing background debug
force reset to enter user or BDM modes 3
tMSH
100
—
—
μs
7
D
IRQ pulse width
Asynchronous path2
Synchronous path4
tILIH, tIHIL
100
1.5 × tcyc
—
—
—
—
ns
8
D
Keyboard interrupt pulse width
Asynchronous path2
Synchronous path4
tILIH, tIHIL
100
1.5 × tcyc
—
—
—
—
ns
Port rise and fall time —
Low output drive (PTxDS = 0) (load = 50 pF)5
Slew rate control disabled (PTxSE = 0)
Slew rate control enabled (PTxSE = 1)
tRise, tFall
—
—
16
23
—
—
Port rise and fall time —
High output drive (PTxDS = 1) (load = 50 pF)5
Slew rate control disabled (PTxSE = 0)
Slew rate control enabled (PTxSE = 1)
tRise, tFall
—
—
5
9
—
—
—
4
—
Num
C
1
D
2
9
10
Rating
ns
C
C
Voltage regulator recovery time
tVRR
ns
μs
Typical values are based on characterization data at VDD = 3.0 V, 25 °C unless otherwise stated.
This is the shortest pulse that is guaranteed to be recognized as a reset pin request.
3 To enter BDM mode following a POR, BKGD/MS should be held low during the power-up and for a hold time of t
MSH after VDD
rises above VLVD.
4 This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized.
5
Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range –40°C to 85°C.
1
2
textrst
RESET PIN
Figure 15. Reset Timing
MC9S08QE8 Series Data Sheet, Rev. 7
20
Freescale Semiconductor
Electrical Characteristics
tIHIL
KBIPx
IRQ/KBIPx
tILIH
Figure 16. IRQ/KBIPx Timing
3.10.2
TPM Module Timing
Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that
can be used as the optional external source to the timer counter. These synchronizers operate from the
current bus rate clock.
Table 13. TPM Input Timing
No.
C
1
D
2
Function
Symbol
Min
Max
Unit
External clock frequency
fTCLK
0
fBus/4
Hz
D
External clock period
tTCLK
4
—
tcyc
3
D
External clock high time
tclkh
1.5
—
tcyc
4
D
External clock low time
tclkl
1.5
—
tcyc
5
D
Input capture pulse width
tICPW
1.5
—
tcyc
tTCLK
tclkh
TCLK
tclkl
Figure 17. Timer External Clock
tICPW
TPMCHn
TPMCHn
tICPW
Figure 18. Timer Input Capture Pulse
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
21
Electrical Characteristics
3.10.3
SPI Timing
Table 14 and Figure 19 through Figure 22 describe the timing requirements for the SPI system.
Table 14. SPI Timing
No.
C
Function
Symbol
Min
Max
Unit
—
D
Operating frequency
Master
Slave
fop
fBus/2048
0
fBus/2
fBus/4
Hz
1
D
SPSCK period
Master
Slave
tSPSCK
2
4
2048
—
tcyc
tcyc
2
D
Enable lead time
Master
Slave
tLead
1/2
1
—
—
tSPSCK
tcyc
3
D
Enable lag time
Master
Slave
tLag
1/2
1
—
—
tSPSCK
tcyc
4
D
Clock (SPSCK) high or low time
Master
Slave
tWSPSCK
tcyc – 30
tcyc – 30
1024 tcyc
—
ns
ns
5
D
Data setup time (inputs)
Master
Slave
tSU
15
15
—
—
ns
ns
6
D
Data hold time (inputs)
Master
Slave
tHI
0
25
—
—
ns
ns
7
D
Slave access time
ta
—
1
tcyc
8
D
Slave MISO disable time
tdis
—
1
tcyc
9
D
Data valid (after SPSCK edge)
Master
Slave
tv
—
—
25
25
ns
ns
10
D
Data hold time (outputs)
Master
Slave
tHO
0
0
—
—
ns
ns
11
D
Rise time
Input
Output
tRI
tRO
—
—
tcyc – 25
25
ns
ns
12
D
Fall time
Input
Output
tFI
tFO
—
—
tcyc – 25
25
ns
ns
MC9S08QE8 Series Data Sheet, Rev. 7
22
Freescale Semiconductor
Electrical Characteristics
SS1
(OUTPUT)
11
1
2
SPSCK
(CPOL = 0)
(OUTPUT)
3
4
4
12
SPSCK
(CPOL = 1)
(OUTPUT)
5
MISO
(INPUT)
6
MSB IN2
BIT 6 . . . 1
9
MOSI
(OUTPUT)
LSB IN
10
9
MSB OUT2
BIT 6 . . . 1
LSB OUT
NOTES:
1. SS output mode (DDS7 = 1, SSOE = 1).
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
Figure 19. SPI Master Timing (CPHA = 0)
SS(1)
(OUTPUT)
1
2
12
11
11
12
3
SPSCK
(CPOL = 0)
(OUTPUT)
4
4
SPSCK
(CPOL = 1)
(OUTPUT)
5
MISO
(INPUT)
6
MSB IN(2)
BIT 6 . . . 1
10
9
MOSI
(OUTPUT) PORT DATA
LSB IN
MASTER MSB OUT(2)
BIT 6 . . . 1
MASTER LSB OUT
PORT DATA
NOTES:
1. SS output mode (DDS7 = 1, SSOE = 1).
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
Figure 20. SPI Master Timing (CPHA =1)
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
23
Electrical Characteristics
SS
(INPUT)
1
12
11
11
12
3
SPSCK
(CPOL = 0)
(INPUT)
2
4
4
SPSCK
(CPOL = 1)
(INPUT)
8
7
MISO
(OUTPUT)
BIT 6 . . . 1
MSB OUT
SLAVE
10
10
9
SEE
NOTE
SLAVE LSB OUT
6
5
MOSI
(INPUT)
BIT 6 . . . 1
MSB IN
LSB IN
NOTE:
1. Not defined but normally MSB of character just received
Figure 21. SPI Slave Timing (CPHA = 0)
SS
(INPUT)
1
3
2
SPSCK
(CPOL = 0)
(INPUT)
4
SPSCK
(CPOL = 1)
(INPUT)
4
SEE
NOTE
SLAVE
MSB OUT
5
7
MOSI
(INPUT)
11
11
12
10
9
MISO
(OUTPUT)
12
8
BIT 6 . . . 1
SLAVE LSB OUT
6
MSB IN
BIT 6 . . . 1
LSB IN
NOTE:
1. Not defined but normally LSB of character just received
Figure 22. SPI Slave Timing (CPHA = 1)
3.11
Analog Comparator (ACMP) Electricals
Table 15. Analog Comparator Electrical Specifications
C
Characteristic
D
Supply voltage
P
Supply current (active)
Symbol
Min
Typical
Max
Unit
VDD
1.8
—
3.6
V
IDDAC
—
20
35
μA
MC9S08QE8 Series Data Sheet, Rev. 7
24
Freescale Semiconductor
Electrical Characteristics
Table 15. Analog Comparator Electrical Specifications (continued)
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Analog input voltage
VAIN
VSS – 0.3
—
VDD
V
P
Analog input offset voltage
VAIO
—
20
40
mV
C
Analog comparator hysteresis
VH
3.0
9.0
15.0
mV
P
Analog input leakage current
IALKG
—
—
1.0
μA
C
Analog comparator initialization delay
tAINIT
—
—
1.0
μs
3.12
ADC Characteristics
Table 16. 12-Bit ADC Operating Conditions
Symb
Min
Typical1
Max
Unit
Comment
Absolute
VDDA
1.8
—
3.6
V
—
Delta to VDD (VDD – VDDA)2
ΔVDDA
–100
0
100
mV
—
Ground voltage
Delta to VSS (VSS – VSSA)2
ΔVSSA
–100
0
100
mV
—
Input voltage
—
VADIN
VREFL
—
VREFH
V
—
Input
capacitance
—
CADIN
—
4.5
5.5
pF
—
Input
resistance
—
RADIN
—
5
7
kΩ
—
—
—
—
—
2
5
kΩ
External to MCU
—
—
—
—
5
10
—
—
10
0.4
—
8.0
MHz
—
0.4
—
4.0
Characteristic
Supply voltage
Analog source
resistance
Conditions
12-bit mode
fADCK > 4 MHz
fADCK < 4 MHz
10-bit mode
fADCK > 4 MHz
fADCK < 4 MHz
RAS
8-bit mode (all valid fADCK)
ADC
conversion
clock freq.
High speed (ADLPC = 0)
Low power (ADLPC = 1)
fADCK
Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK=1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2 DC potential difference.
1
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
25
Electrical Characteristics
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
ZADIN
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
Pad
leakage
due to
input
protection
ZAS
RAS
ADC SAR
ENGINE
RADIN
+
VADIN
VAS
+
–
–
CAS
RADIN
INPUT PIN
RADIN
INPUT PIN
RADIN
INPUT PIN
CADIN
Figure 23. ADC Input Impedance Equivalency Diagram
Table 17. ADC Characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol
Min
Typ1
Max
Unit
T
Supply current
ADLPC = 1
ADLSMP = 1
ADCO = 1
IDDA
—
120
—
μA
T
Supply current
ADLPC = 1
ADLSMP = 0
ADCO = 1
IDDA
—
202
—
μA
T
Supply current
ADLPC = 0
ADLSMP = 1
ADCO = 1
IDDA
—
288
—
μA
P
Supply current
ADLPC = 0
ADLSMP = 0
ADCO = 1
IDDA
—
0.532
1
mA
ADC
asynchronous
clock source
2
3.3
5
P
C
Characteristic
Conditions
High speed (ADLPC = 0)
Low power (ADLPC = 1)
fADACK
MHz
1.25
2
3.3
Comment
tADACK =
1/fADACK
MC9S08QE8 Series Data Sheet, Rev. 7
26
Freescale Semiconductor
Electrical Characteristics
Table 17. ADC Characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
C
Characteristic
P
Conversion
time (including
sample time)
Conditions
Symbol
Short sample (ADLSMP = 0)
Long sample (ADLSMP = 1)
tADC
Short sample (ADLSMP = 0)
P
Sample time
Long sample (ADLSMP = 1)
D
D
Temp sensor
slope
Temp sensor
voltage
tADS
–40 °C– 25 °C
Min
Typ1
Max
—
20
—
—
40
—
—
3.5
—
—
23.5
—
—
1.646
—
—
1.769
—
—
701.2
—
m
25 °C– 85 °C
25 °C
VTEMP25
Unit
Comment
ADCK
cycles
See QE8
reference
manual for
conversion
time
variances
ADCK
cycles
mV/°C
mV
Characteristics for devices with dedicated analog supply (28- and 32-pin packages only)
T
T
P
12-bit mode, 3.6> VDDA > 2.7
Total
unadjusted
error
12-bit mode, 2.7> VDDA > 1.8V
10-bit mode
ETUE
—
–1 to 3
–2.5 to 5.5
—
–1 to 3
–3.0 to 6.5
—
±1
±2.5
P
8-bit mode
—
±0.5
±1.0
T
12-bit mode
—
±1.0
–1.5 to 2.0
—
±0.5
±1.0
P
Differential
non-linearity
10-bit mode3
DNL
P
8-bit mode3
—
±0.3
±0.5
T
12-bit mode
—
±1.5
–2.5 to
2.75
—
±0.5
±1.0
8-bit mode
—
±0.3
±0.5
12-bit mode
—
±1.5
±2.5
—
±0.5
±1.5
T
Integral
non-linearity
T
T
P
Zero-scale
error
10-bit mode
10-bit mode
INL
EZS
P
8-bit mode
—
±0.5
±0.5
T
12-bit mode
—
±1.0
–3.5 to 1.0
—
±0.5
±1
8-bit mode
—
±0.5
±0.5
12-bit mode
—
–1 to 0
—
—
—
±0.5
—
—
±0.5
P
Full-scale error
P
D
Quantization
error
10-bit mode
10-bit mode
8-bit mode
EFS
EQ
LSB2
Includes
quantization
LSB2
LSB2
LSB2
VADIN =
VSSA
LSB2
VADIN =
VDDA
LSB2
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
27
Electrical Characteristics
Table 17. ADC Characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
C
Characteristic
D
Input leakage
error
Conditions
Symbol
12-bit mode
10-bit mode
EIL
8-bit mode
Min
Typ1
Max
—
±2
—
—
±0.2
±4
—
±0.1
±1.2
Unit
Comment
LSB2
Pad
leakage4 *
RAS
LSB2
Includes
quantization
Characteristics for devices with shared supply (16- and 20-pin packages only)
T
P
P
Total
unadjusted
error
T
P
Differential
non-linearity
12-bit mode
Not recommended usage
—
±1.5
±3.5
8-bit mode
—
±0.7
±1.5
12-bit mode
Not recommended usage
10-bit mode
10-bit mode3
ETUE
DNL
—
±0.5
±1.0
±0.3
±0.5
P
8-bit mode3
—
T
12-bit mode
Not recommended usage
T
Integral
non-linearity
T
T
P
Zero-scale
error
—
±0.5
±1.0
8-bit mode
—
±0.3
±0.5
12-bit mode
Not recommended usage
10-bit mode
10-bit mode
INL
EZS
—
±1.5
±2.1
±0.5
±0.7
P
8-bit mode
—
T
12-bit mode
Not recommended usage
P
Full-scale error
P
D
D
Quantization
error
Input leakage
error
—
±1
±1.5
8-bit mode
—
±0.5
±0.5
12-bit mode
Not recommended usage
10-bit mode
EFS
—
—
±0.5
8-bit mode
—
—
±0.5
12-bit mode
Not recommended usage
10-bit mode
10-bit mode
8-bit mode
EQ
EIL
—
±0.2
±4
—
±0.1
±1.2
LSB2
LSB2
LSB2
VADIN =
VSSA
LSB2
VADIN =
VDDA
LSB2
LSB2
Pad
leakage4 *
RAS
Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2
1 LSB = (VREFH – VREFL)/2N
3
Monotonicity and No-missing-codes guaranteed in 10-bit and 8-bit modes
4 Based on input pad leakage current. Refer to pad electricals.
1
MC9S08QE8 Series Data Sheet, Rev. 7
28
Freescale Semiconductor
Electrical Characteristics
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
3.6
V
D
Supply voltage for program/erase
–40 °C to 85 °C
Vprog/erase
1.8
D
Supply voltage for read operation
VRead
1.8
—
3.6
V
fFCLK
150
—
200
kHz
tFcyc
5
—
6.67
μs
frequency1
D
Internal FCLK
D
Internal FCLK period (1/FCLK)
P
P
P
P
Byte program time (random
Byte program time (burst
location)2
mode)2
—
tprog
9
tFcyc
tBurst
4
tFcyc
Page erase
time2
tPage
4000
tFcyc
Mass erase
time2
tMass
20,000
tFcyc
Byte program
Page erase
current3
current3
RIDDBP
—
4
—
mA
RIDDPE
—
6
—
mA
10,000
—
100,000
—
—
cycles
15
100
—
years
endurance4
C
Program/erase
TL to TH = –40°C to 85 °C
T = 25 °C
C
Data retention5
tD_ret
1
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
3
The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
2
3.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
29
Ordering Information
3.14.1
Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale
test method. The measurement is performed with the microcontroller installed on a custom EMC
evaluation board and running specialized EMC test software designed in compliance with the test method.
The conducted susceptibility is determined by injecting the transient susceptibility signal on each pin of
the microcontroller. The transient waveform and injection methodology is based on IEC 61000-4-4
(EFT/B). The transient voltage required to cause performance degradation on any pin in the tested
configuration is greater than or equal to the reported levels unless otherwise indicated by footnotes below
Table 19.
Table 19. Conducted Susceptibility, EFT/B
Parameter
Symbol
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
1
VCS_EFT
Conditions
VDD = 3.3 V
TA = 25 oC
package type
32-pin LQFP
fOSC/fBUS
Result
Amplitude1
(Min)
A
2.3
B
4.0
C
>4.0
D
>4.0
8 MHz
crystal
8 MHz bus
Unit
kV
Data based on qualification test results. Not tested in production.
The susceptibility performance classification is described in Table 20.
Table 20. Susceptibility Performance Classification
Result
4
Performance Criteria
A
No failure
The MCU performs as designed during and after exposure.
B
Self-recovering
failure
C
Soft failure
The MCU does not perform as designed during exposure. The MCU does not return to
normal operation until exposure is removed and the RESET pin is asserted.
D
Hard failure
The MCU does not perform as designed during exposure. The MCU does not return to
normal operation until exposure is removed and the power to the MCU is cycled.
E
Damage
The MCU does not perform as designed during and after exposure. The MCU cannot
be returned to proper operation due to physical damage or other permanent
performance degradation.
The MCU does not perform as designed during exposure. The MCU returns
automatically to normal operation after exposure is removed.
Ordering Information
This section contains ordering information for the device numbering system.
Example of the device numbering system:
MC9S08QE8 Series Data Sheet, Rev. 7
30
Freescale Semiconductor
Package Information
MC 9 S08 QE 8
C XX
Status
(MC = Fully qualified)
Package designator (see Table 21)
Temperature range
(C = –40 °C to 85 °C)
Memory
(9 = Flash-based)
Core
Approximate flash size in Kbytes
Family
5
Package Information
Table 21. Package Descriptions
Pin Count
5.1
Package Type
Abbreviation
Designator
Case No.
Document No.
873A
98ASH70029A
32
Low Quad Flat Package
LQFP
LC
28
Small Outline Integrated Circuit
SOIC
WL
751F
98ASB42345B
20
Small Outline Integrated Circuit
SOIC
WJ
751D
98ASB42343B
PDIP
PG
648
98ASB42431B
TSSOP
TG
948F
98ASH70247A
16
Plastic Dual In-line Package
16
Thin Shrink Small Outline Package
Mechanical Drawings
The following pages are mechanical drawings for the packages described in Table 21.
MC9S08QE8 Series Data Sheet, Rev. 7
Freescale Semiconductor
31
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MC9S08QE8
Rev. 7
4/2009