Freescale Semiconductor Data Sheet: Technical Data Document Number: MC9S08JS16 Rev. 4, 4/2009 MC9S08JS16 MC9S08JS16 Series Covers: MC9S08JS16 MC9S08JS8 MC9S08JS16L MC9S08JS8L Features: • 8-Bit HCS08 Central Processor Unit (CPU) – 48 MHz HCS08 CPU (central processor unit) – 24 MHz internal bus frequency – Support for up to 32 interrupt/reset sources • Memory Options – Up to 16 KB of on-chip in-circuit programmable flash memory with block protection and security options – Up to 512 bytes of on-chip RAM – 256 bytes of USB RAM • Clock Source Options – Clock source options include crystal, resonator, external clock – MCG (multi-purpose clock generator) — PLL and FLL; internal reference clock with trim adjustment • System Protection – Optional computer operating properly (COP) reset with option to run from independent 1 kHz internal clock source or the bus clock – Low-voltage detection – Illegal opcode detection with reset – Illegal address detection with reset • Power-Saving Modes – Wait plus two stops • USB Bootload – Mass erase entire flash array – Partial erase flash array — erase all flash blocks except for the first 1 KB of flash – Program flash • Peripherals – USB — USB 2.0 full-speed (12 Mbps) with dedicated on-chip 3.3 V regulator and transceiver; supports endpoint 0 and up to 6 additional endpoints TBD 20 W-SOIC Case 751D – SPI — One 8- or 16-bit selectable serial peripheral interface module with a receive data buffer hardware match function – SCI — One serial communications interface module with optional 13 bit break. Full duplex non-return to zero (NRZ); LIN master extended break generation; LIN slave extended break detection; wakeup on active edge – MTIM — One 8-bit modulo counter with 8-bit prescaler and overflow interrupt – TPM — One 2-channel 16-bit timer/pulse-width modulator (TPM) module; selectable input capture, output compare, and edge-aligned PWM capability on each channel; timer module may be configured for buffered, centered PWM (CPWM) on all channels – KBI — 8-pin keyboard interrupt module – RTC — Real-time counter with binary- or decimal-based prescaler – CRC — Hardware CRC generator circuit using 16-bit shift register; CRC16-CCITT compliancy with x16+x12+x5+1 polynomial • Input/Output – Software selectable pullups on ports when used as inputs – Software selectable slew rate control on ports when used as outputs – Software selectable drive strength on ports when used as outputs – Master reset pin and power-on reset (POR) – Internal pullup on RESET, IRQ, and BKGD/MS pins to reduce customer system cost • Package Options – 24-pin quad flat no-lead (QFN) – 20-pin small outline IC package (SOIC) This document contains information on a product under development. Freescale reserves the right to change or discontinue this product without notice. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. 24 QFN Case 1982-01 Table of Contents 1 2 3 MCU Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 3.1 Parameter Classification . . . . . . . . . . . . . . . . . . . . . . . . .6 3.2 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . .6 3.3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .7 3.4 Electrostatic Discharge (ESD) Protection Characteristics8 3.5 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.6 Supply Current Characteristics . . . . . . . . . . . . . . . . . . .15 3.7 External Oscillator (XOSC) Characteristics . . . . . . . . .17 3.8 MCG Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .18 3.9 4 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.1 Control Timing . . . . . . . . . . . . . . . . . . . . . . . . . 3.9.2 Timer/PWM (TPM) Module Timing. . . . . . . . . . 3.10 SPI Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.11 Flash Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 USB Electricals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2 Mechanical Drawings. . . . . . . . . . . . . . . . . . . . . . . . . . 19 19 20 21 24 25 26 26 26 Revision History To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information available, refer to: http://freescale.com/ The following revision history table summarizes changes contained in this document. Revision Date Description of Changes 1 9/1/2008 Initial public released 2 1/8/2009 In Table 7, changed the parameter description of RIDD and S3IDD, the typicals of RIDD were changed as well. 3 3/9/2009 Corrected the 24-pin QFN case number and doc. number information. 4 4/24/2009 Added new parts information about MC9S08JS16L and MC9S08JS8L. Related Documentation Find the most current versions of all documents at: http://www.freescale.com Reference Manual (MC9S08JS16RM) Contains extensive product information including modes of operation, memory, resets and interrupts, register definition, port pins, CPU, and all module information. MC9S08JS16 Series MCU Data Sheet, Rev. 4 2 Freescale Semiconductor MCU Block Diagram 1 MCU Block Diagram The block diagram, Figure 1, shows the structure of the MC9S08JS16 series MCU. ON-CHIP ICE AND DEBUG MODULE (DBG) HCS08 CORE RESET IRQ USB MODULE FULL SPEED USB USB ENDPOINT TRANSCEIVER RAM CPU BDC PTA1/KBIP1/MISO HCS08 SYSTEM CONTROL 8-BIT KEYBOARD INTERRUPT MODULE (KBI) RESETS AND INTERRUPTS MODES OF OPERATION POWER MANAGEMENT IRQ KBIPx 8 PTA2/KBIP2/MOSI MISO 8-/16-BIT COP PTA0/KBIP0/TPMCH0 LVD SERIAL PERIPHERAL INTERFACE MODULE (SPI) USER FLASH (IN BYTES) MC9S08JS16 = 16,384 MC9S08JS16L = 16,384 MC9S08JS8 = 8,192 MC9S08JS8L = 8,192 SERIAL COMMUNICATIONS INTERFACE MODULE (SCI) PORT A BKGD/MS USBDP USBDN MOSI SPSCK SS PTA3/KBIP3/SPSCK PTA4/KBIP4/SS PTA5/KBIP5/TPMCH1 RxD PTA6/KBIP6/RxD TxD PTA7/KBIP7/TxD TPMCH0 USER RAM (IN BYTES) 512 2-CHANNEL TIMER/PWM TPMCH1 MODULE (TPM) Bootloader ROM (IN BYTES) 4096 EXTAL MULTI-PURPOSE CLOCK GENERATOR (MCG) VDD VSS VUSB33 XTAL PORT B PTB3/BLMS 8-BIT MODULO TIMER MODULE (MTIM) VSSOSC PTB0/IRQ/TCLK PTB1/RESET PTB2/BKGD/MS TCLK PTB4/XTAL PTB5/EXTAL LOW-POWER OSCILLATOR 16-BIT Cyclic Redundancy Check Generator MODULE (CRC) SYSTEM VOLTAGE REGULATOR USB 3.3 V VOLTAGE REGULATOR REAL-TIME COUNTER (RTC) NOTES: 1. Port pins are software configurable with pullup device if input port. 2. Pin contains software configurable pullup/pulldown device if IRQ is enabled (IRQPE = 1). Pulldown is enabled if rising edge detect is selected (IRQEDG = 1). 3. IRQ does not have a clamp diode to VDD. IRQ must not be driven above VDD. 4. RESET contains integrated pullup device if PTB1 enabled as reset pin function (RSTPE = 1). 5. Pin contains integrated pullup device. 6. When pin functions as KBI (KBIPEn = 1) and associated pin is configured to enable the pullup device, KBEDGn can be used to reconfigure the pullup as a pulldown device. Figure 1. MC9S08JS16 Series Block Diagram MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 3 Pin Assignments 2 Pin Assignments This section shows the pin assignments in the packages available for the MC9S08JS16 series. Table 1. Pin Availability by Package Pin-Count Pin Number (Package) <-- Lowest Priority --> Highest 24 (QFN) 20 (SOIC) Port Pin Alt 1 Alt 2 1 4 PTB0 2 5 PTB1 3 6 PTB2 4 7 PTB3 5 8 PTA0 6 — NC 7 9 8 IRQ TCLK RESET BKGD MS BLMS KBIP0 TPMCH0 PTA1 KBIP1 MISO 10 PTA2 KBIP2 MOSI 9 11 PTA3 KBIP3 SPSCK 10 12 PTA4 KBIP4 SS 11 13 12 — 13 14 VSS 14 15 USBDN 15 16 USBDP 16 17 VUSB33 17 18 PTA5 18 — NC 19 19 20 VDD NC KBIP5 TPMCH1 PTA6 KBIP6 RxD 20 PTA7 KBIP7 TxD 21 1 PTB4 XTAL 22 2 PTB5 EXTAL 23 3 24 — VSSOSC NC MC9S08JS16 Series MCU Data Sheet, Rev. 4 4 Freescale Semiconductor PTB4/XTAL PTA7/KBIP7/TxD PTA6/KBIP6/RxD 24 23 PTB5/EXTAL VSSOSC NC Pin Assignments 22 21 20 19 18 NC PTB0/IRQ/TCLK 1 17 PTA5/KBIP5/TPMCH1 PTB1/RESET 2 16 VUSB33 PTB2/BKGD/MS 3 24-Pin QFN PTB3/BLMS 4 15 USBDP PTA0/KBIP0/TPMCH0 5 14 USBDN 9 10 11 PTA3/KBIP3/SPSCK PTA4/KBIP4/SS VDD 12 NC 8 PTA2/KBIP2/MOSI 13 VSS 7 PTA1/KBIP1/MISO NC 6 Figure 2. MC9S08JS16 Series in 24-QFN Package PTB4/XTAL 1 20 PTA7/KBIP7/TxD PTB5/EXTAL 2 19 PTA6/KBIP6/RxD VSSOSC 3 18 PTA5/KBIP5/TPMCH1 PTB0/IRQ/TCLK 4 17 VUSB33 PTB1/RESET 5 16 USBDP PTB2/BKGD/MS 6 15 USBDN PTB3/BLMS 7 14 VSS PTA0/KBIP0/TPMCH0 8 13 VDD PTA1/KBIP1/MISO 9 12 PTA4/KBIP4/SS PTA2/KBIP2/MOSI 10 11 PTA3/KBIP3/SPSCK Figure 3. MC9S08JS16 Series in 20-pin SOIC Package MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 5 Electrical Characteristics 3 Electrical Characteristics This chapter contains electrical and timing specifications. 3.1 Parameter Classification The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better understanding, the following classification is used and the parameters are tagged accordingly in the tables where appropriate: Table 2. Parameter Classifications P Those parameters are guaranteed during production testing on each individual device. C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size across process variations. T Those parameters are achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. All values shown in the typical column are within this category. D Those parameters are derived mainly from simulations. NOTE The above classifications are used in the column labeled “C” in applicable tables of this data sheet. 3.2 Absolute Maximum Ratings Absolute maximum ratings are stress ratings only, and functional operation at the maximum is not guaranteed. Stress beyond the limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD). Table 3. Absolute Maximum Ratings Rating Supply voltage Input voltage Instantaneous maximum current (applies to all port pins)1, 2, 3 Maximum current into VDD Storage temperature Maximum junction temperature Single pin limit Symbol Value Unit VDD 2.7 to 5.5 V VIn –0.3 to VDD + 0.3 V ID ±25 mA IDD 120 mA Tstg –55 to 150 °C TJ 150 °C MC9S08JS16 Series MCU Data Sheet, Rev. 4 6 Freescale Semiconductor Electrical Characteristics 1 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp voltages, then use the larger of the two resistance values. 2 All functional non-supply pins are internally clamped to VSS and VDD. 3 Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current conditions. If positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could result in external power supply going out of regulation. Ensure external VDD load will shunt current greater than maximum injection current. This will be the greatest risk when the MCU is not consuming power. Examples are: if no system clock is present, or if the clock rate is very low which would reduce overall power consumption. 3.3 Thermal Characteristics This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and it is user-determined rather than being controlled by the MCU design. In order to take PI/O into account in power calculations, determine the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small. Table 4. Thermal Characteristics Rating Operating temperature range (packaged) Symbol Value Unit TA TL to TH -40 to 85 °C θJA 92 33 °C/W Thermal resistance 1,2,3,4 24-pin QFN 1s 2s2p 20-pin SOIC 1s 2s2p 86 58 1 Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance 2 Junction to Ambient Natural Convection 3 1s — Single layer board, one signal layer 4 2s2p — Four layer board, 2 signal and 2 power layers The average chip-junction temperature (TJ) in °C can be obtained from: TJ = TA + (PD × θJA) Eqn. 1 where: TA = Ambient temperature, °C θJA = Package thermal resistance, junction-to-ambient, °C/W MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 7 Electrical Characteristics PD = Pint + PI/OPint = IDD × VDD, Watts — chip internal power PI/O = Power dissipation on input and output pins — user determined For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected) is: PD = K ÷ (TJ + 273°C) Eqn. 2 Solving Equation 1 and Equation 2 for K gives: K = PD × (TA + 273°C) + θJA × (PD)2 Eqn. 3 where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively for any value of TA. 3.4 Electrostatic Discharge (ESD) Protection Characteristics Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. Table 5. ESD Protection Characteristics Parameter Symbol Value Unit ESD Target for Machine Model (MM) — MM circuit description VTHMM 200 V ESD Target for Human Body Model (HBM) — HBM circuit description VTHHBM 2000 V 3.5 DC Characteristics This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various operating modes. Table 6. DC Characteristics Num C 1 Parameter Operating voltage2 Symbol Min Typical1 Max Unit — 2.7 — 5.5 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 8 Freescale Semiconductor Electrical Characteristics Table 6. DC Characteristics (continued) Num C 2 3 P P Parameter Symbol Output high voltage — Low drive (PTxDSn = 0) 5 V, ILoad = –2 mA 3 V, ILoad = –0.6 mA 5 V, ILoad = –0.4 mA 3 V, ILoad = –0.24 mA Output high voltage — High drive (PTxDSn = 1) 5 V, ILoad = –10 mA 3 V, ILoad = –3 mA 5 V, ILoad = –2 mA 3 V, ILoad = –0.4 mA Output low voltage — Low drive (PTxDSn = 0) 5 V, ILoad = 2 mA 3 V, ILoad = 0.6 mA 5 V, ILoad = 0.4 mA 3 V, ILoad = 0.24 mA Output low voltage — High drive (PTxDSn = 1) 5 V, ILoad = 10 mA 3 V, ILoad = 3 mA 5 V, ILoad = 2 mA 3 V, ILoad = 0.4 mA VOH VOL Min Typical1 Max VDD – 1.5 VDD – 1.5 VDD – 0.8 VDD – 0.8 — — — — — — — — VDD – 1.5 VDD – 1.5 VDD – 0.8 VDD – 0.8 — — — — — — — — 1.5 1.5 0.8 0.8 — — — — — — — — 1.5 1.5 0.8 0.8 — — — — — — — — Unit V V Output high current — Max total IOH for all ports 4 P 5 P 5V 3V IOHT — — — — 100 60 mA 5V 3V IOLT — — — — 100 60 mA Output low current — Max total IOL for all ports 6 P Input high voltage; all digital inputs VIH 0.65 × VDD — — 7 P Input low voltage; all digital inputs VIL — — 0.35 × VDD 8 P Input hysteresis; all digital inputs Vhys 0.06 × VDD — — mV |IIn| — 0.1 1 μA 9 P Input leakage current; input only pins 3 V 10 P High Impedance (off-state) leakage current |IOZ| — 0.1 1 μA 11 P Internal pullup resistors4 RPU 20 45 65 kΩ 12 P Internal pulldown resistors5 RPD 20 45 65 kΩ 13 C RPUPD 900 1425 1575 3090 kΩ 14 C Input capacitance; all non-supply pins CIn — — 8 pF 15 C RAM retention voltage VRAM 0.6 1.0 — V 16 P POR rearm voltage VPOR 0.9 1.4 2.0 V 17 D POR rearm time tPOR 10 — — μs 3 Internal pullup resistor to USBDP (to VUSB33) Idle Transmit — — MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 9 Electrical Characteristics Table 6. DC Characteristics (continued) Num C 18 19 20 21 22 P P C P P 23 C 24 T Parameter Symbol Low-voltage detection threshold — high range VDD falling VDD rising Low-voltage detection threshold — low range VDD falling VDD rising Low-voltage warning threshold — high range 1 VDD falling VDD rising Low-voltage warning threshold — high range 0 VDD falling VDD rising Low-voltage warning threshold low range 1 VDD falling VDD rising Low-voltage warning threshold — low range 0 VDD falling VDD rising VLVD1 VLVD0 VLVW3 VLVW2 VLVW1 VLVW0 Min Typical1 Max 3.9 4.0 4.0 4.1 4.1 4.2 2.48 2.54 2.56 2.62 2.64 2.70 4.5 4.6 4.6 4.7 4.7 4.8 4.2 4.3 4.3 4.4 4.4 4.5 2.84 2.90 2.92 2.98 3.00 3.06 2.66 2.72 2.74 2.80 2.82 2.88 — — 100 60 — — Unit V V V V V V Low-voltage inhibit reset/recover hysteresis 5V 3V Vhys mV Typical values are based on characterization data at 25 °C unless otherwise stated. Operating voltage with USB enabled can be found in Section 3.11, “USB Electricals.” 3 Measured with V = V In DD or VSS. 4 Measured with V = V . In SS 5 Measured with V = V . In DD 1 2 MC9S08JS16 Series MCU Data Sheet, Rev. 4 10 Freescale Semiconductor Electrical Characteristics IOH vs VDD-VOH (Low Drive) at VDD = 3 V 0.30 VDD-VOH (V) 0.25 0.20 0.15 -40C 25C 0.10 85C 0.05 0.00 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 -2.6 -2.8 -3 IOH (mA) Figure 4. Typical IOH (Low Drive) vs VDD–VOH at VDD = 3 V VDD-VOH (V) IOH vs VDD-VOH (High Drive) at VDD = 3 V 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 -40C 25C 85C 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 IOH (mA) Figure 5. Typical IOH (High Drive) vs VDD–VOH at VDD = 3 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 11 Electrical Characteristics IOH vs VDD-VOH (Low Drive) at VDD = 5 V 0.7 0.6 VOL (V) 0.5 -40C 25C 0.4 0.3 85C 0.2 0.1 0.0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 -2.6 -2.8 -3 IOH(mA) Figure 6. Typical IOH (Low Drive) vs VDD–VOH at VDD = 5 V VDD-VOH (V) IOH vs VDD-VOH (High Drive) at VDD = 5 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40C 25C 85C 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 IOH (mA) Figure 7. Typical IOH (High Drive) vs VDD–VOH at VDD = 5 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 12 Freescale Semiconductor Electrical Characteristics 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -3 -2 .2 -2 .4 -2 .6 -2 .8 -2 -1 -1 .2 -1 .4 -1 .6 -1 .8 -40C 25C 85C 0 -0 .2 -0 .4 -0 .6 -0 .8 VOL (V) IOL vs VOL (Low Drive) at VDD = 5 V IOL(mA) Figure 8. IOL vs VOL (Low Drive) at VDD = 5 V IOL vs VOL (High Drive) at VDD = 5 V 0.25 VOL (V) 0.20 -40C 25C 85C 0.15 0.10 0.05 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 IOL (mA) Figure 9. IOL vs VOL (High Drive) at VDD = 5 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 13 Electrical Characteristics IOL vs VOL (Low Drive) at VDD = 3 V 1.0 VOL (V) 0.8 -40C 25C 85C 0.6 0.4 0.2 0.0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 -2.6 -2.8 -3 IOL (mA) Figure 10. IOL vs VOL (Low Drive) at VDD = 3 V IOL vs VOL (High Drive) at VDD = 3 V 1.4 1.2 VOL (V) 1.0 -40C 25C 85C 0.8 0.6 0.4 0.2 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 IOL (mA) Figure 11. IOL vs VOL (High Drive) at VDD = 3 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 14 Freescale Semiconductor Electrical Characteristics 3.6 Supply Current Characteristics Table 7. Supply Current Characteristics 3 4 5 6 Max2 5 1.03 — 3 0.83 — 5 19.93 — 3 18.74 — 5 1.36 — μA 3 1.18 — μA 5 1.50 — μA 3 1.31 — μA 5 300 — nA 3 300 — nA 5 106.7 — μA 3 95.6 — μA 5 5.6 — μA 3 5.3 — μA ΔIUSBE 5 1.5 — mA ISUSP 5 273.3 — μA Parameter Symbol 1 C Run supply current3 measured at (CPU clock = 2 MHz, fBus = 1 MHz, BLPE mode) RIDD 2 P Run supply current3 measured at (CPU clock = 48 MHz, fBus = 24 MHz, PEE mode, all module on) RIDD 3 P 4 P Stop3 mode supply current, all module off S3IDD 5 P RTC adder to stop2 or stop33, 25 °C ΔISRTC 6 P LVD adder to stop3 (LVDE = LVDSE = 1) ΔISLVD 7 P Adder to stop3 for oscillator enabled4 (ERCLKEN =1 and EREFSTEN = 1) ΔISOSC 9 2 Typical1 C 8 1 VDD (V) Num T T Stop2 mode supply current USB module enable USB suspend current5 current6 S2IDD Unit mA mA Typicals are measured at 25 °C. See Figure 12 through Figure 10 for typical curves across voltage/temperature. Values given here are preliminary estimates prior to completing characterization. Most customers are expected to find that auto-wakeup from stop2 or stop3 can be used instead of the higher current wait mode. Wait mode typical is 560 μA at 5 V and 422 μA at 3 V with fBus = 1 MHz. Values given under the following conditions: low range operation (RANGE = 0), low power mode (HGO = 0). Here USB module is enabled and clocked at 48 MHz (USBEN = 1, USBVREN =1, USBPHYEN = 1 and USBPU = 1), and D+ and D– pulled down by two 15.1 kΩ resisters independently. The current consumption may be much higher when the packets are being transmitted through the attached cable. MCU enters stop3 mode, USB bus in idle state. The USB suspend current will be dominated by the D+ pullup resister. MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 15 Electrical Characteristics Typical Run IDD for PEE,FBE & BLPE IDD vs. VDD 25.000 IDD(mA) 20.000 15.000 PEE,48MHz Core FBE,8MHz Core BLPE,2MHz Core 10.000 5.000 0.000 2.5 3 3.5 4 4.5 5 5.5 VDD(V) Figure 12. Typical Run IDD for PEE, FBE and BLPE Modes (IDD vs. VDD) MC9S08JS16 Series MCU Data Sheet, Rev. 4 16 Freescale Semiconductor Electrical Characteristics 3.7 External Oscillator (XOSC) Characteristics Table 8. Oscillator Electrical Specifications (Temperature Range = –40 to 85°C Ambient) Num C Rating Oscillator crystal or resonator (EREFS = 1, ERCLKEN = 1) Low range (RANGE = 0) High range (RANGE = 1) FEE or FBE mode2 High range (RANGE = 1) PEE or PBE mode3 High range (RANGE = 1, HGO = 1) BLPE mode High range (RANGE = 1, HGO = 0) BLPE mode 1 C 2 — Load capacitors 3 — 4 Series resistor Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0) — High range, high gain (RANGE = 1, HGO = 1) ≥ 8 MHz 4 MHz 1 MHz 5 6 T T Symbol Min Typ1 Max Unit flo fhi-fll fhi-pll fhi-hgo fhi-lp 32 1 1 1 1 — — — — — 38.4 5 16 16 8 kHz MHz MHz MHz MHz C1, C2 Feedback resistor Low range (32 kHz to 38.4 kHz) High range (1 MHz to 16 MHz) RF RS Crystal start-up time4 Low range, low gain (RANGE = 0, HGO = 0) Low range, high gain (RANGE = 0, HGO = 1) High range, low gain (RANGE = 1, HGO = 0)5 High range, high gain (RANGE = 1, HGO = 1)5 t t CSTL-LP CSTL-HGO t CSTH-LP t CSTH-HGO Square wave input clock frequency (EREFS = 0, ERCLKEN = 1) FEE or FBE mode2 PEE or PBE mode3 BLPE mode fextal See crystal or resonator manufacturer’s recommendation. — — 10 1 — — — — — 0 100 0 — — — — — — 0 0 0 0 10 20 — — — — 200 400 5 15 — — — — ms 0.03125 1 0 — — — 5 16 40 MHz MΩ kΩ Typical data was characterized at 3.0 V, 25 °C or is recommended value. When MCG is configured for FEE or FBE mode, input clock source must be divided using RDIV to within the range of 31.25 kHz to 39.0625 kHz. 3 When MCG is configured for PEE or PBE mode, input clock source must be divided using RDIV to within the range of 1 MHz to 2 MHz. 4 This parameter is characterized and not tested on each device. Proper PC board layout procedures must be followed to achieve specifications. 5 4 MHz crystal. 1 2 MCU EXTAL XTAL RF C1 Crystal or Resonator RS C2 MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 17 Electrical Characteristics 3.8 MCG Specifications Table 9. MCG Frequency Specifications (Temperature Range = –40 to 85°C Ambient) Num C Rating Symbol Min Typical Max Unit fint_ut 25 32.7 41.66 kHz 1 C Average internal reference frequency — untrimmed 2 P Average internal reference frequency — trimmed fint_t 31.25 — 39.0625 kHz T Internal reference startup time tirefst — 60 100 μs C DCO output frequency range — untrimmed fdco_ut 25.6 33.48 42.66 MHz 5 P DCO output frequency range — trimmed fdco_t 32 — 40 MHz 6 Resolution of trimmed DCO output frequency at C fixed voltage and temperature (using FTRIM) Δfdco_res_t — ±0.1 ±0.2 %fdco 7 C Resolution of trimmed DCO output frequency at fixed voltage and temperature (not using FTRIM) Δfdco_res_t — ±0.2 ±0.4 %fdco 8 P Total deviation of trimmed DCO output frequency over voltage and temperature Δfdco_t — 0.5 –1.0 ±2 %fdco 9 Total deviation of trimmed DCO output frequency C over fixed voltage and temperature range of 0–70 °C Δfdco_t — ±0.5 ±1 %fdco 10 C FLL acquisition time1 tfll_acquire — — 1 ms 11 D PLL acquisition time2 tpll_acquire — — 1 ms 12 Long term Jitter of DCO output clock (averaged over C 2ms interval)3 CJitter — 0.02 0.2 %fdco 13 D VCO operating frequency fvco 7.0 — 55.0 MHz 14 D PLL reference frequency range fpll_ref 1.0 — 2.0 MHz 15 T fpll_jitter_2ms — 0.5904 — % 16 T Jitter of PLL output clock measured over 625 ns5 fpll_jitter_625ns — 0.5664 — % Dlock ±1.49 — ±2.98 % Dunl ±4.47 — ±5.97 % 3 4 17 Long term accuracy of PLL output clock (averaged over 2 ms) D Lock entry frequency tolerance6 tolerance7 18 D Lock exit frequency 19 D Lock time — FLL tfll_lock — — 20 D Lock time — PLL tpll_lock — — 21 D Loss of external clock minimum frequency — RANGE = 0 floc_low (3/5) x fint — — kHz 22 D Loss of external clock minimum frequency — RANGE = 1 floc_high (16/5) x fint — — kHz tfll_acquire+ 1075(1/fint_t) tpll_acquire+ 1075(1/fpll_ref) s s 1 This specification applies any time the FLL reference source or reference divider is changed, trim value changed or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 2 This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes it is already running. MC9S08JS16 Series MCU Data Sheet, Rev. 4 18 Freescale Semiconductor Electrical Characteristics 3 Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBUS. Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage for a given interval. 4 Jitter measurements are based upon a 48 MHz clock frequency. 5 625 ns represents 5 time quanta for CAN applications, under worst case conditions of 8 MHz CAN bus clock, 1 Mbps CAN bus speed, and 8 time quanta per bit for bit time settings. 5 time quanta is the minimum time between a synchronization edge and the sample point of a bit using 8 time quanta per bit. 6 Below Dlock minimum, the MCG is guaranteed to enter lock. Above Dlock maximum, the MCG will not enter lock. But if the MCG is already in lock, then the MCG may stay in lock. 7 Below Dunl minimum, the MCG will not exit lock if already in lock. Above Dunl maximum, the MCG is guaranteed to exit lock. 3.9 AC Characteristics This section describes AC timing characteristics for each peripheral system. 3.9.1 Control Timing Figure 13. Control Timing Num C 1 D 2 D Symbol Min Typical1 Max Unit Bus frequency (tcyc = 1/fBus) fBus DC — 24 MHz Internal low-power oscillator period tLPO 700 — 1300 μs textrst 1.5 × tSelf_reset — — ns Parameter width2 3 D External reset pulse (tcyc = 1/fSelf_reset) 4 D Reset low drive trstdrv 66 × tcyc — — ns 5 D Active background debug mode latch setup time tMSSU 25 — — ns 6 D Active background debug mode latch hold time tMSH 25 — — ns 7 D IRQ pulse width Asynchronous path2 Synchronous path3 tILIH, tIHIL 100 1.5 × tcyc — — ns 8 D KBIPx pulse width Asynchronous path2 Synchronous path3 tILIH, tIHIL 100 1.5 × tcyc — — ns C Port rise and fall time (load = 50 pF)4 Slew rate control disabled (PTxSE = 0) Slew rate control enabled (PTxSE = 1) tRise, tFall — — 3 30 — — ns 9 Typical values are based on characterization data at VDD = 5.0 V, 25 °C unless otherwise stated. This is the shortest pulse that is guaranteed to be recognized as a reset pin request. Shorter pulses are not guaranteed to override reset requests from internal sources. 3 This is the minimum pulse width guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case. 4 Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range –40°C to 85°C. 1 2 MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 19 Electrical Characteristics textrst RESET PIN Figure 14. Reset Timing tIHIL IRQ/KBIPx IRQ/KBIPx tILIH Figure 15. IRQ/KBIPx Timing 3.9.2 Timer/PWM (TPM) Module Timing Synchronizer circuits determine the shortest input pulses that can be recognized or the fastest clock that can be used as the optional external source to the timer counter. These synchronizers operate from the current bus rate clock. Table 10. TPM Input Timing Num C 1 D 2 Function Symbol Min Max Unit External clock frequency fTPMext dc fBus/4 MHz D External clock period tTPMext 4 — tcyc 3 D External clock high time tclkh 1.5 — tcyc 4 D External clock low time tclkl 1.5 — tcyc 5 D Input capture pulse width tICPW 1.5 — tcyc tTPMext tclkh TPMxCLK tclkl Figure 16. Timer External Clock MC9S08JS16 Series MCU Data Sheet, Rev. 4 20 Freescale Semiconductor Electrical Characteristics tICPW TPMxCHn TPMxCHn tICPW Figure 17. Timer Input Capture Pulse 3.10 SPI Characteristics Table 11 and Figure 18 through Figure 21 describe the timing requirements for the SPI system. MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 21 Electrical Characteristics Table 11. SPI Electrical Characteristic Num1 Characteristic2 C Symbol Min Typical Max Unit Master Slave fop fop fBus/2048DC — — fBus/2 fBus/4 Hz Master Slave tSCK tSCK 2 4 — — 2048 — tcyc Master Slave tLead tLead — — 1/2 1/2 — — tSCK Master Slave tLag tLag — — 1/2 1/2 — — tSCK Master Slave tSCKH — 1/2 tSCK – 25 1/2 tSCK 1/2 tSCK — — ns Master Slave tSCKL — 1/2 tSCK – 25 1/2 tSCK 1/2 tSCK — — ns Master Slave tSI(M) tSI(S) 30 30 — — — — ns Master Slave tHI(M) tHI(S) 30 30 — — — — ns Operating frequency3 1 D 2 D 3 D 4 D 5 D 6 D 7 D 8 D 9 D Access time, slave4 tA — — 40 ns 10 D Disable time, slave5 tdis — — 40 ns 11 D Master Slave tSO tSO — — — — 25 25 ns 12 D Master Slave tHO tHO –10 –10 — — — — ns Cycle time Enable lead time Enable lag time Clock (SPSCK) high time Clock (SPSCK) low time Data setup time (inputs) Data hold time (inputs) Data setup time (outputs) Data hold time (outputs) 1 Refer to Figure 18 through Figure 21. All timing is shown with respect to 20% VDD and 80% VDD, unless noted; 50 pF load on all SPI pins. All timing assumes slew rate control disabled and high drive strength enabled for SPI output pins. 3 The maximum frequency is 8 MHz when input filter on SPI pins is disabled. 4 Time to data active from high-impedance state. 5 Hold time to high-impedance state. 2 MC9S08JS16 Series MCU Data Sheet, Rev. 4 22 Freescale Semiconductor Electrical Characteristics SS1 (OUTPUT) 3 1 2 SCK (CPOL = 0) (OUTPUT) 5 4 SCK (CPOL = 1) (OUTPUT) 5 4 6 MISO (INPUT) 7 MSB IN2 BIT 6 . . . 1 10 MOSI (OUTPUT) LSB IN 12 10 MSB OUT2 BIT 6 . . . 1 LSB OUT NOTES: 1. SS output mode (MODFEN = 1, SSOE = 1). 2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB. Figure 18. SPI Master Timing (CPHA = 0) SS(1) (OUTPUT) 1 3 2 SCK (CPOL = 0) (OUTPUT) 5 4 SCK (CPOL = 1) (OUTPUT) 5 4 6 MISO (INPUT) 7 MSB IN(2) LSB IN 12 10 MOSI (OUTPUT) BIT 6 . . . 1 MSB OUT(2) BIT 6 . . . 1 LSB OUT NOTES: 1. SS output mode (MODFEN = 1, SSOE = 1). 2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB. Figure 19. SPI Master Timing (CPHA = 1) MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 23 Electrical Characteristics SS (INPUT) 3 1 SCK (CPOL = 0) (INPUT) 5 4 2 SCK (CPOL = 1) (INPUT) 5 4 8 MISO (OUTPUT) 12 10 BIT 6 . . . 1 MSB OUT SLAVE SEE NOTE SLAVE LSB OUT 7 6 MOSI (INPUT) 9 BIT 6 . . . 1 MSB IN LSB IN NOTE: 1. Not defined but normally MSB of character just received Figure 20. SPI Slave Timing (CPHA = 0) SS (INPUT) 3 1 2 SCK (CPOL = 0) (INPUT) 5 4 SCK (CPOL = 1) (INPUT) 5 4 10 MISO (OUTPUT) SEE NOTE 8 MOSI (INPUT) SLAVE 12 MSB OUT 6 BIT 6 . . . 1 9 SLAVE LSB OUT 7 MSB IN BIT 6 . . . 1 LSB IN NOTE: 1. Not defined but normally LSB of character just received Figure 21. SPI Slave Timing (CPHA = 1) 3.11 Flash Specifications This section provides details about program/erase times and program-erase endurance for the flash memory. Program and erase operations do not require any special power sources other than the normal VDD supply. MC9S08JS16 Series MCU Data Sheet, Rev. 4 24 Freescale Semiconductor Electrical Characteristics Table 12. Flash Characteristics Symbol Min Typical1 Max Unit Supply voltage for program/erase Vprog/erase 2.7 — 5.5 V D Supply voltage for read operation VRead 2.7 — 5.5 V 3 D Internal FCLK frequency2 fFCLK 150 — 200 kHz 4 D Internal FCLK period (1/FCLK) tFcyc 5 — 6.67 μs 5 P Byte program time (random location)2 tprog 9 tFcyc 6 P Byte program time (burst mode)2 tBurst 4 tFcyc 7 P Page erase time3 tPage 4000 tFcyc 8 P Mass erase time2 tMass 20,000 tFcyc 9 C Program/erase endurance4 TL to TH = –40°C to 85 °C T = 25 °C 10 C Data retention5 Num C 1 D 2 Characteristic — 10,000 — — 100,000 — — cycles tD_ret 15 100 — years Typical values are based on characterization data at VDD = 5.0 V, 25 °C unless otherwise stated. The frequency of this clock is controlled by a software setting. 3 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating approximate time to program and erase. 4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory. 5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory. 1 2 3.12 USB Electricals The USB electricals for the S08USBV1 module conform to the standards documented by the Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org. If the Freescale S08USBV1 implementation requires additional or deviant electrical characteristics, this space would be used to communicate that information. Table 13. Internal USB 3.3 V Voltage Regulator Characteristics Symbol Min Typical Max Unit Regulator operating voltage Vregin 3.9 — 5.5 V Vreg output Vregout 3 3.3 3.6 V Vreg filter capacitor Cusbreg — 100 — pF Vusb33 input with internal Vreg disabled Vusb33in 3 3.3 3.6 V MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 25 Ordering Information Table 14. External 3.3 V Voltage Regulator Supply for Vusb33 Pin External 3.3 V regulator output current 4 Symbol Min Typical Max Unit — 39 — — mA Ordering Information This section contains ordering information for Device Numbering System. See below for an example of the device numbering system. MC 9 S08 JS 16 (L) C XX Status (MC = Fully qualified) Memory (9 = Flash-based) Core Package designator (See Table 15) Temperature range (C = –40 °C to 85 °C) USB bootloader supported at 3.3 V Family 4.1 Approximate memory size (in KB) Package Information Table 15. Package Descriptions Pin Count 4.2 Package Type Abbreviation Designator Case No. Document No. 24 Quad Flat No-Leads QFN FK 1982-01 98ARL10608D 20 Wide Body Small Outline Integrated Circuit W-SOIC WJ 751D 98ASB42343B Mechanical Drawings This following pages contain mechanical specifications for MC9S08JS16 series package options. • 24-pin QFN (quad flat no-lead) • 20-pin W-SOIC (wide body small outline integrated circuit) MC9S08JS16 Series MCU Data Sheet, Rev. 4 26 Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MC9S08JS16 Rev. 4 4/2009