UniFET
FDH50N50_F133 / FDA50N50
TM
500V N-Channel MOSFET
Features
Description
• 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 105 nC)
• Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G{
G D
S
TO-247
FDH Series
TO-3PN
z
z
{
FDA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
FDH50N50_F133/FDA50N50
Unit
500
V
48
30.8
A
A
192
A
±20
V
(Note 2)
1868
mJ
Avalanche Current
(Note 1)
48
A
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
62.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
PD
Power Dissipation
625
5
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2012 Fairchild Semiconductor Corporation
FDH50N50_F133 / FDA50N50 Rev.C0
1
Min.
Max.
Unit
--
0.2
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
February 2012
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDH50N50_F133
FDA50N50
FDH50N50_F133
TO-247
-
-
30
FDA50N50
TO-3PN
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
25
250
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.089
0.105
Ω
--
20
--
S
--
4979
6460
pF
--
760
1000
pF
--
50
65
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 24A
gFS
Forward Transconductance
VDS = 40V, ID = 48A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Coss
Output Capacitance
VDS = 400V, VGS = 0V, f = 1.0MHz
--
161
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
342
--
pF
VDD = 250V, ID = 48A
RG = 25Ω
--
105
220
ns
--
360
730
ns
--
225
460
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 400V, ID = 48A
VGS = 10V
(Note 4, 5)
--
230
470
ns
--
105
137
nC
--
33
--
nC
--
45
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
192
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 48A
--
--
1.4
V
trr
Reverse Recovery Time
--
580
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 48A
dIF/dt =100A/μs
--
10
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 48A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDH50N50_F133 / FDA50N50 Rev.C0
2
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
2
10
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
10
o
150 C
o
25 C
o
-55 C
1
Notes :
1. VDS = 40V
Notes :
1. 250μs Pulse Test
o
2. TC = 25 C
2. 250μs Pulse Test
-1
10
-1
0
10
0.1
1
10
10
4
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
9
0.3
VGS = 10V
0.2
VGS = 20V
0.1
120
80
o
150 C
o
40
25 C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
Note : TJ = 25 C
0.0
0
25
50
75
100
125
150
0
0.2
175
0.4
Figure 5. Capacitance Characteristics
12,000
0.6
0.8
1.0
VDS = 100V
VGS, Gate-Source Voltage [V]
Crss = Cgd
8,000
Ciss
4,000
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
2,000
Crss
0
-1
10
0
10
VDS = 250V
10
VDS = 400V
8
6
4
2
Note : ID = 48A
1
10
0
2
10
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDH50N50_F133 / FDA50N50 Rev.C0
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
6,000
1.4
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
10,000
1.2
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
160
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.4
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(ON), (Normalized)
1.1
1.0
Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
Notes :
1. VGS = 10 V
0.5
2. ID = 24 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
3
10
Operation in This Area
is Limited by R DS(on)
40
10 us
100 us
ID, Drain Current [A]
ID, Drain Current [A]
2
10
1 ms
DC
1
10
10 ms
Notes :
o
1. TC = 25 C
0
10
30
20
10
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
0
25
3
10
10
50
125
150
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
4,000
45
Notes :
1. VDS = 400 V
3,500
Notes :
1. VDS = 400 V
40
2. VGS = 12 V
2. VGS = 12 V
3. ID = 25A
3,000
3. ID = 25A
35
o
o
4. TJ = 125 C
2,500
di/dt(on)
2,000
1,500
di/dt(off)
1,000
4. TJ = 125 C
30
dv/dt [V/nS]
di/dt [A/μS]
100
TC, Case Temperature [ C]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
dv/dt(on)
25
20
15
dv/dt(off)
10
500
0
75
o
VDS, Drain-Source Voltage [V]
5
0
5
10
15
20
25
30
35
40
45
0
50
RG, Gate resistance [Ω]
FDH50N50_F133 / FDA50N50 Rev.C0
0
5
10
15
20
25
30
35
40
45
50
RG, Gate resistance [Ω]
4
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs.
Gate Resistance
Figure 14. Unclamped Inductive Switching
Capability
1,000
100
Notes :
1. If R = 0 Ω
tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD)
2. If R ≠ 0 Ω
tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
800
IAS, Avalanche Current [A]
Energy [μJ]
Eoff
600
Eon
400
Notes :
1. VDS = 400 V
200
2. VGS = 12 V
o
o
Starting TJ = 150 C
10
Starting TJ = 25 C
3. ID = 25A
o
0
4. TJ = 125 C
0
5
10
15
20
25
30
35
40
45
1
0.01
50
0.1
RG, Gate resistance [Ω]
1
10
100
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
ZθJC(t), Thermal Response
10
-1
D=0.5
0.2
Notes :
o
1. Z θ JC(t) = 0.2 C/W Max.
0.1
2. Duty Factor, D=t1/t2
0.05
10
-2
3. T JM - T C = P DM * Z θ JC(t)
0.02
0.01
single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square W ave Pulse Duration [sec]
FDH50N50_F133 / FDA50N50 Rev.C0
5
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-247AB
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev.C0
6
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev.C0
7
www.fairchildsemi.com
tm
tm
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDH50N50_F133 / FDA50N50 Rev.C0
8
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
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