FDZ3N513ZT Integrated NMOS and Schottky Diode Features General Description Monolithic NMOS and Schottky Diode The FDZ3N513ZT is a monolithic NMOS/ Schottky combination (FETky) and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile LED backlighting applications. Ultra-small form factor 1mm x 1mm WLCSP Max rDS(on) = 462 mΩ at VGS = 4.5 V, ID = 0.3 A Max rDS(on) = 520 mΩ at VGS = 3.2 V, ID = 0.3 A Application HBM ESD protection level > 2000V (Note3) Boost Converter Power Train for single cell Li-ion LED backlighting RoHS Compliant D K S G Pin 1 WL-CSP 3D Bumps Facing Up View WL-CSP 1.0X1.0 Bumps Facing Up View WL-CSP 3D Bumps Facing Down View Absolute Maximum Ratings Ratings Units VDS Symbol NMOS Drain to Source Voltage Parameter 30 V VGS NMOS Gate to Source Voltage -0.3/5.5 V PD Power Dissipation @ TA = 25°C (Note 1a) 1 W ID Maximum Continuous NMOS Drain Current (Note 1a) 1.1 A VRRM Schottky Repetitive Peak Reverse Voltage 25 V IO Schottky Average Forward Current TJ, TSTG Operating Junction and Storage Temperature ESD Electrostatic Discharge Protection CDM 0.3 A -55/125 °C 2000 V Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient - 1in2, 2oz. Copper (Note 1a) 100 °C/W RθJA Thermal Resistance, Junction to Ambient - Minimum Pad (Note 1b) 260 °C/W Package Marking and Ordering Information Part Number FDZ3N513ZT Device Marking Z3 ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C Package WL-CSP 1.0X1.0 1 Reel Size 7” Tape Width 8mm Quantity 5000 units www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode July 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = +5 V/-0.3 V, VDS = 0 V 30 V 47 mV/°C 1 μA ±10 μA 1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 0.5 0.7 -1.6 mV/°C VGS = 4.5 V, ID = 0.3 A 384 462 VGS = 3.2 V, ID = 0.3 A 410 520 VDS = 5 V, ID = 0.3 A 0.5 VDS = 15 V, VGS = 0 V, f = 1 MHz 45 85 pF 45 85 pF 10 25 pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 2.0 Switching Characteristics 3.1 10 1.9 10 ns 9.6 20 ns Fall Time 2.7 10 Total Gate Charge (VGS = 4.5 V) 1.0 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Qg Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 0.3 A VGS = 5 V, RGEN = 6 Ω VDD = 15 V ID = 0.3 A ns ns nC 0.1 nC 0.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.3 A (Note 2) IF = 0.3 A, di/dt = 100 A/μs 0.75 1.2 V 16 29 ns 6.0 10 nC 15 30 Schottky Diode Characteristics IR Reverse Leakage VR = 20 V TJ = 25 °C TJ = 85 °C VF Forward Voltage IF = 300 mA TJ = 25 °C TJ = 85 °C 0.72 μA μA 300 1.2 0.74 V Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. a. 100 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C 2 www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted 2 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V ID, DRAIN CURRENT (A) VGS = 3.5 V 1.5 VGS = 2.5 V VGS = 1.5 V 1.0 0.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 2.5 VGS = 4.5 V 1.8 1.6 1.4 VGS = 3.5 V VGS = 2.5 V 1.2 1.0 3.0 VGS = 1.8 V 0.0 0.5 1.0 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1400 ID = 0.3 A 1200 1000 800 TJ = 125 oC 600 400 0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 2.0 2 1.5 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 2.0 1600 ID = 0.3 A VGS = 4.5 V 1.6 0.6 -75 1.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V TJ = 150 oC 1.0 TJ = 25 oC 0.5 TJ = -55 oC 0 0.5 1.0 1.5 1 TJ = 150 oC TJ = 25 oC TJ = -55 oC 0.1 0.2 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 500 ID = 0.3 A 4 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 5 3 VDD = 15 V 2 VDD = 20 V 1 Ciss 100 Coss f = 1 MHz VGS = 0 V 10 0 0 0.3 0.6 0.9 5 0.1 1.2 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 0.0030 1 Ig, GATE LEAKAGE CURRENT (A) ID, DRAIN CURRENT (A) Crss 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 260 oC/W TC = 25 oC 0.001 0.1 1 10 VDS = 0 V 0.0025 0.0020 0.0015 TJ = 125 oC 0.0010 0.0005 0.0000 TJ = 25 oC -0.0005 100 0 VDS, DRAIN to SOURCE VOLTAGE (V) 2 4 6 8 10 12 VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Gate Leakage Current vs Gate to Source Voltage Figure 9. Forward Bias Safe Operating Area 1 TJ = 125 oC IF, FORWARD CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) -2 10 -3 10 TJ = 85 oC -4 10 TJ = 60 oC -5 10 0 5 10 15 0.01 TJ = 60 oC 0.001 20 25 0 30 VR, REVERSE VOLTAGE (V) 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (V) Figure 11. Schottky Diode Reverse Current ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C TJ = 85 oC TJ = 25 oC TJ = 25 oC -6 10 TJ = 125 oC 0.1 Figure 12. Schottky Diode Forward Voltage 4 www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 100 SINGLE PULSE o RθJA = 260 C/W 10 o TA = 25 C 1 0.1 -4 10 -3 -2 10 -1 10 10 1 100 10 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 260 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C 5 www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted FDZ3N513ZT Integrated NMOS and Schottky Diode Dimensional Outline and Pad Layout Product Specific Dimensions Product FDZ3N513ZTUCX ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDZ3N513ZT Rev. C 7 www.fairchildsemi.com FDZ3N513ZT Integrated NMOS and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.