ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW 1.0 GHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF184R1 • In Tape and Reel. 500 Units per 32 mm, 13 inch Reel. ARCHIVED 2005 CASE 360C–05, STYLE 1 NI–360S MRF184SR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 7 Adc Total Device Dissipation @ TC = 70°C Derate above 70°C PD 118 0.9 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 1.1 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 Vd, VDS = 0 Vdc) IGSS – – 1 µAdc Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 1 mAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF184R1 MRF184SR1 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) – 0.65 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.6 – s Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Ciss – 83 – pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss – 44 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss – 4.3 – pF Common Source Power Gain (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Gps 11.5 13.5 – dB Drain Efficiency (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) η 53 60 – % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) ψ ON CHARACTERISTICS DYNAMIC CHARACTERISTICS ARCHIVED 2005 FUNCTIONAL CHARACTERISTICS No Degradation in Output Power B1 C1 C2, C3, C6, C9 C4 C5, C12 C7, C10 C8, C11 C13 Short RF Bead Fair Rite–2743019447 18 pF Chip Capacitor 43 pF Chip Capacitor 100 pF Chip Capacitor 10 µF, 50 Vdc Electrolytic Capacitor 1000 pF Chip Capacitor 0.1 µF, 50 Vdc Chip Capacitor 250 µF, 50 Vdc Electrolytic Capacitor L1 R1 R2 R3 R4 TL1–TL4 Ckt Board 5 Turns, 20 AWG, IDIA 0.126″ 10 kΩ, 1/4 W Resistor 13 kΩ, 1/4 W Resistor 1.0 kΩ, 1/4 W Chip Resistor 4 x 39 Ω, 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32″ Glass Teflon, εr = 2.55 ARLON–GX–0300–55–22 Figure 1. MRF184 Test Circuit Schematic MRF184R1 MRF184SR1 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 () 7& () + () + () , &' - , %./ - , * %./ 0 , 1" ( !"# ( () 0 , 1" () 1" 1" () () * Figure 2. Intermodulation Distortion Products versus Output Power !"# 23 "!&# 0 , 1" 1" 1" 1" , &' - , %./ !"# 23 , &' 0 , 1" - , %./ Figure 4. Power Gain versus Output Power !"# * * 6 " !# Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA * 6" . , &' 45 , * - , %./ 0 , 1" - , %./ * 45 !"# * Figure 5. Output Power versus Input Power 45 , * !"# ARCHIVED 2005 !"# Figure 3. Intermodulation Distortion versus Output Power , &' - , %./ - , * %./ 1" 23 "!&# () () % %"!&'# % %"!&'# TYPICAL CHARACTERISTICS * * * * " ( " !# * Figure 7. Output Power versus Gate Voltage MRF184R1 MRF184SR1 3 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS * !"# " !"# 45 , * , &' 0 , 1" * * * 6" . * , &' * - 0 6 !%./# Figure 8. Output Power versus Frequency 433 733 "( " !# * * 9 , ° , ° Figure 10. Capacitance versus Voltage " " !&'# Figure 11. DC Safe Operating Area η 23 "!&# " !"%# * " " !&'# Figure 12. DC Safe Operating Area MRF184R1 MRF184SR1 4 23 * * 9 , ° , ° , &' 0 , 1" , !# - 0 6 !%./# * η 6!8# , &' - , * %./ * * * 33 * * * " !"%# """ !2# ARCHIVED 2005 * * * * * * * * " " !# Figure 9. Drain Current versus Gate Voltage Figure 13. Performance in Broadband Circuit MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 !&1# "% " 7& ( , &' , * " - , %./ - , * %./ () () () 45 !&1# Figure 14. Class A Third Order Intercept Point ARCHIVED 2005 MRF184 Figure 15. Component Parts Layout MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 5 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 :45 - , %./ - , %./ : , Ω ARCHIVED 2005 :; , &' 0 , 1" , Zin f MHz Zin Ohms ZOL* Ohms * < =* * ( =* * < =* * ( =* * < =* * ( =* * < =* * ( =* * < =* * ( =* = Conjugate of source impedance. Zout = Conjugate of the load impedance at a given output power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance MRF184R1 MRF184SR1 6 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 1. Common Source S–Parameters (VDS = 13.5 V) ARCHIVED 2005 ID = 2.0 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.916 179 10.88 80 0.014 –22 0.843 175 30 0.917 178 9.26 79 0.014 –25 0.847 174 40 0.918 177 8.10 78 0.015 –29 0.852 174 50 0.919 176 7.16 77 0.015 –33 0.853 174 100 0.919 175 4.57 75 0.015 –35 0.855 173 150 0.920 174 3.34 67 0.015 –38 0.865 173 200 0.921 173 2.60 62 0.014 –41 0.867 173 250 0.922 173 2.11 59 0.014 –45 0.877 173 300 0.928 172 1.77 55 0.014 –49 0.881 173 350 0.938 172 1.50 50 0.013 –55 0.887 173 400 0.941 171 1.28 47 0.013 –59 0.895 173 450 0.942 171 1.12 44 0.012 –62 0.896 173 500 0.943 171 1.00 41 0.012 –68 0.898 172 550 0.945 171 0.91 38 0.010 –75 0.899 172 600 0.947 171 0.80 35 0.010 –79 0.903 172 650 0.948 171 0.71 33 0.009 –85 0.905 172 700 0.955 170 0.65 30 0.008 –88 0.909 172 750 0.959 170 0.60 28 0.008 –95 0.919 172 800 0.962 169 0.55 25 0.007 –102 0.922 172 850 0.963 169 0.50 23 0.007 –111 0.923 171 900 0.964 169 0.45 21 0.007 –118 0.926 171 950 0.968 169 0.43 19 0.006 –125 0.929 171 1000 0.970 169 0.39 18 0.006 –129 0.933 171 1050 0.971 168 0.36 17 0.005 –134 0.935 171 1100 0.972 168 0.34 14 0.005 –142 0.936 170 1150 0.973 168 0.32 13 0.005 –149 0.938 170 1200 0.974 167 0.29 12 0.006 –156 0.940 169 1250 0.976 167 0.28 10 0.007 –162 0.943 169 1300 0.975 167 0.26 9 0.008 –173 0.945 168 1350 0.972 166 0.25 8 0.009 –178 0.946 167 1400 0.969 166 0.24 7 0.011 175 0.947 167 1450 0.965 165 0.22 6 0.012 172 0.948 167 1500 0.959 164 0.21 5 0.013 169 0.950 167 MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Table 2. Common Source S–Parameters (VDS = 28 V) ID = 2.0 A ARCHIVED 2005 f MHz S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.912 –170 16.01 84 0.016 –12 0.746 178 30 0.917 –173 13.73 82 0.015 –15 0.755 177 40 0.918 –174 12.02 80 0.014 –17 0.759 177 50 0.919 –176 10.62 78 0.013 –20 0.766 176 100 0.922 –178 6.76 71 0.012 –22 0.775 176 150 0.930 177 4.92 65 0.011 –25 0.791 176 200 0.931 176 3.82 60 0.010 –27 0.791 176 250 0.933 175 3.07 55 0.009 –29 0.793 176 300 0.941 174 2.53 51 0.009 –31 0.826 176 350 0.943 173 2.14 45 0.008 –35 0.834 176 400 0.945 172 1.83 41 0.008 –45 0.853 176 450 0.948 172 1.58 38 0.007 –52 0.858 176 500 0.950 172 1.39 35 0.007 –57 0.865 176 550 0.955 172 1.24 32 0.007 –61 0.876 176 600 0.960 172 1.10 29 0.006 –64 0.882 176 650 0.965 171 0.96 26 0.006 –68 0.888 175 700 0.967 171 0.89 24 0.006 –71 0.894 175 750 0.970 171 0.80 20 0.005 –73 0.904 175 800 0.973 170 0.73 18 0.005 –78 0.906 175 850 0.974 169 0.66 17 0.004 –83 0.908 174 900 0.975 169 0.61 13 0.004 –91 0.909 173 950 0.976 169 0.57 12 0.004 –94 0.915 173 1000 0.978 168 0.52 11 0.004 –96 0.916 173 1050 0.979 168 0.47 9 0.005 –102 0.919 172 1100 0.980 168 0.43 7 0.005 –115 0.924 172 1150 0.980 167 0.41 6 0.006 –119 0.931 171 1200 0.979 167 0.38 5 0.006 –125 0.934 170 1250 0.978 167 0.36 2 0.006 –139 0.935 170 1300 0.974 167 0.34 1 0.007 –148 0.936 170 1350 0.971 166 0.32 0 0.007 –156 0.937 169 1400 0.970 165 0.31 –1 0.007 –165 0.938 169 1450 0.969 165 0.30 –2 0.008 –171 0.939 169 1500 0.965 164 0.27 –3 0.008 –178 0.946 169 MRF184R1 MRF184SR1 8 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 NOTES MOTOROLA RF DEVICE DATA MRF184R1 MRF184SR1 9 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 NOTES MRF184R1 MRF184SR1 10 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS 2X G B Q ??? % " % > * % " " "% 6* %(* * % > .* * % . % " * !*# ""6 % "@" 6* % 1 3 B R 2 (FLANGE) (LID) 2X D AAA % " 2X % K ''' " % % % % F H ''' N (LID) " % % % S C E (INSULATOR) ??? T SEATING PLANE AAA M % " % (INSULATOR) A A % " % % INCHES MIN MAX * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * MILLIMETERS MIN MAX * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 6 > * " * " * CASE 360B–05 ISSUE F NI–360 MRF184R1 A A (FLANGE) B ARCHIVED 2005 % DIM A B C D E F G H K M N Q R S aaa bbb ccc > * % " " "% 6* %(* * % > .* * % . % " * !*# ""6 % "@" 6* 1 2 B K 2X (FLANGE) 2X R D AAA (LID) % " % % ''' % " % % F H N (LID) ''' % " % % S (INSULATOR) E C PIN 3 T M % " % % " % SEATING PLANE (INSULATOR) AAA ??? % MOTOROLA RF DEVICE DATA % DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX * * * * * * * * * * * * * * * * * * * * * * * * * * * MILLIMETERS MIN MAX * * * * * * * * * * * * * * * * * * * * * * * * * * * 6 > * " * " * CASE 360C–05 ISSUE D NI–360S MRF184SR1 MRF184R1 MRF184SR1 11 Archived 2005 ARCHIVED 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Motorola reserves the right to make changes without further notice to any products herein. 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