Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz. • Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz) Power Gain — 13 dB (Typ) @ 60 Watts Efficiency — 45% (Typ) @ 60 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power • Excellent Thermal Stability • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 1.80 – 1.88 GHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF18060A CASE 465A–06, STYLE 1 NI–780S MRF18060ALSR3, MRF18060ASR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC ≥ 25°C Derate above 25°C PD 180 1.03 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.97 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.7 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 160 — pF Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 740 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF 11.5 13 — 43 45 — — — –10 Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common–Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz) η Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 – 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) IRL Ψ dB % dB No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency. MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 2 MOTOROLA RF DEVICE DATA C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 kΩ Chip Resistors (0805) 2.7 kΩ Chip Resistors (0805) 1.1 kΩ Chip Resistor (0805) BC847 Transistor SOT–23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47″ x 0.09″ Microstrip 1.16″ x 0.09″ Microstrip 0.57″ x 0.95″ Microstrip 0.59″ x 1.18″ Microstrip 1.26″ x 0.15″ Microstrip 1.15″ x 0.09″ Microstrip 0.37″ x 0.09″ Microstrip Figure 1. 1805 – 1880 MHz Test Fixture Schematic MRF18060 Figure 2. 1805 – 1880 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 3 $%& ÎÎÎ ÎÎÎ ÎÎÎ T1 T2 !!"# Z4 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU–P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU–P (0805) 1 pF Chip Capacitor, ACCU–P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 ' T1 LP2951 Micro–8 Voltage Regulator T2 BC847 SOT–23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon Glass, εr = 2.55 Figure 3. 1800 – 2000 MHz Demo Board Schematic $%& !!"# Î ÎÎ R5 MRF18060 Î ÎÎ ÎÎ Î ÎÎÎÎÎÎ Î Î ÎÎÎÎÎ Î Î Î ' ÎÎ Î ÎÎ Î ÎÎÎÎÎ Î ÎÎ Î ÎÎ Î Î MRF18060 Figure 4. 1800 – 2000 MHz Demo Board Component Layout MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 4 MOTOROLA RF DEVICE DATA 00 20 + ,11*-1.*/ 4 ) 0 9 00 9 00 9 0 00 9 2 ' ) : 3 ) ''0 567 0 +, *- .*/ 00 + ,11*-1.*/ + ,11*-1.*/ 0 * 0 0 ) : 4 ) 00 9 0 0 * 0 08 * 0 0 '00 '0 8 * 0 0 0 * 0 ) : 4 ) 00 9 ' 0 , - ./ ''0 200 Figure 7. Output Power versus Frequency '0 0 0 h 0 + 0 0 0 0 0 ) : 4 ) 00 9 3 ) ''0 567 0 0 0 %, *- .*/ 0 ; ! 80 ; 8 ; 80 ;' 8 ; 0 80 ; 8 ; 80 '00 0 Figure 8. Output Power and Efficiency versus Input Power 8 00 0 0 80 08 080 ' 20 0 '0 '0 3, -4- .567/ ! ,1*-11./ 0 Figure 6. Output Power versus Supply Voltage % ) * '0 % ) * 0 0 0 Figure 5. Power Gain versus Output Power 20 '0 η,11--1.</ 200 3, -4- .567/ ; ) : 4 ) 00 9 000 00 ,11-11./ ! ,1*-11./ TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) ; ' ;0 Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA RF DEVICE DATA MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 5 % 3 ) 00 567 3 ) 00 567 3 ) 00 567 = 3 ) 00 567 ) Ω ) , 4 ) 00 9, + ) 0 * * f MHz Zin ZOL* Ω Zin Ω 1700 0.60 + j2.53 2.27 + j3.44 1800 0.80 + j3.20 2.05 + j3.05 1900 0.92 + j3.42 1.90 + j2.90 2000 1.07 + j3.59 1.64 + j2.88 2100 1.31 + j4.00 1.29 + j2.99 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, and drain efficiency. !+ 5&+:>%? @+AB +!+ 5&+:>%? @+AB @C%:@ @ @ + Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 2X 1 Q $$$ 5 5 -D 8 5- - - 85; 228 8 5-D 68 8 --- 8 5- 6 5-- 0800 .08/ * 5 E- 8 5 3 B K 2 (FLANGE) D $$$ 5 5 5 M $$$ N R (INSULATOR) 5 5 5 ::: 5 5 5 &&& 5 5 S (LID) ::: 5 5 (LID) 5 (INSULATOR) 5 H C F E T A A SEATING PLANE 4X U (FLANGE) 1 K 2X 2 (FLANGE) D 5 MILLIMETERS MIN MAX 82 8 28 282 8 ' 8 8 8' 08'2 8 080' 08 821 8 80 8 8 28 282 280 0800 800 8 28 28 28 28 08 1- 081- 08' 1- - D 8 8 8 - -D 8 5- - - 85; 228 8 5-D 68 8 --- 8 5- 6 5-- 0800 .08/ * 5 E- 8 4X Z (LID) B $$$ INCHES MIN MAX 8 8 08'0 0820 08 08 0 082 080 080 080 0800 0800 8 001 080 080 08 0 08 0 08 08' 08 08'' 8 ' 8 ' 08 08 08 08 08001- 080 01- 080 1- CASE 465–06 ISSUE F NI–780 MRF18060A (FLANGE) B DIM A B C D E F G H K M N Q R S aaa bbb ccc 5 5 N (LID) ::: M R 5 5 5 ::: 5 5 5 5 &&& 5 5 S (INSULATOR) $$$ 5 (LID) 5 (INSULATOR) 5 INCHES MIN MAX 08'0 08' 08'0 0820 08 08 0 082 080 080 080 0800 0800 080 080 08 0 08 0 08 08' 08 08'' 08 08 08 08 ;;; 0800 ;;; 0800 08001- 080 01- 080 1- MILLIMETERS MIN MAX 08 080 28 282 8 ' 8 8 8' 08'2 8 080' 08 8 80 8 8 28 080 28 080 28 28 28 28 ;;; 80 ;;; 08 08 1- 081- 08' 1- - D 8 8 8 - H C 3 DIM A B C D E F H K M N R S U Z aaa bbb ccc F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF18060ALSR3, MRF18060ASR3 MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 ◊ 8 MRF18060A/D MOTOROLA RF DEVICE DATA