MOTOROLA MRF373A

MOTOROLA
Freescale Semiconductor, Inc.
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
MRF373ALR1
MRF373ALSR1
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
D
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
470 - 860 MHz, 75 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF373ALR1
G
CASE 360C - 05, STYLE 1
NI - 360S
MRF373ALSR1
S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDSS
70
Vdc
VGS
- 0.5, +15
Vdc
PD
197
1.12
278
1.59
Watts
W/°C
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.89
0.63
°C/W
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF373ALR1
MRF373ALSR1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373ALR1
MRF373ALSR1
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
For More Information On This Product,
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MRF373ALR1 MRF373ALSR1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 µA)
V(BR)DSS
70
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.41
0.45
Vdc
Input Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Coss
—
49
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0, f = 1 MHz)
Crss
—
2
—
pF
Common Source Power Gain
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
η
56
60
—
%
Load Mismatch
(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
ψ
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS (50 ohm system)
MRF373ALR1 MRF373ALSR1
2
No Degradation in Output Power
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
R3
VGG
C14
VDD
R2 C12
C17
C13
C16
C1
1
C10
C3
C2
C9
C8
Freescale Semiconductor, Inc...
L1
C1
C4
C5
RF OUTPUT
C6
CUT OUT AREA
RF INPUT
C15
C7
R1
MRF373A
Rev 01
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout
Table 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
Description
C1, C2
18 pF Chip Capacitors, B Case, ATC
C3
12 pF Chip Capacitor, B Case, ATC
C4
1.8 pF Chip Capacitor, B Case, ATC
C5, C10
51 pF Chip Capacitors, B Case, ATC
C6
0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS)
C7
15 pF Chip Capacitor, B Case, ATC
C8
10 pF Chip Capacitor, B Case, ATC
C9
2.7 pF Chip Capacitor, B Case, ATC
C11
0.5 pF Chip Capacitor, B Case, ATC
C12
1000 pF Chip Capacitor, B Case, ATC
C13
39 pF Chip Capacitor, B Case, ATC
C14, C15
470 pF Chip Capacitors, B Case, ATC
C16
2.2 mF, 100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT
C17
10 mF, 35 V Tantalum Capacitor, Kemet #T491D106K35AS
L1A
12 nH, Coilcraft #A04T
R1, R2
390 Ω, 1/2 Ω Chip Resistors, Vishay Dale (2010)
R3
1 kΩ, 1/2 Ω Chip Resistor, Vishay Dale (2010)
PCB
Arlon GX - 0300 - 55, 30 mils, εr = 2.55
MOTOROLA RF DEVICE DATA
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MRF373ALR1 MRF373ALSR1
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
20
19
G ps , POWER GAIN (dB)
VDD = 32 Vdc
f = 860 MHz
IDQ = 500 mA
400 mA
300 mA
18
200 mA
17
100 mA
16
15
1
10
100
Figure 2. Power Gain versus Output Power
62
VDD = 32 Vdc
Pout = 75 W (CW)
IDQ = 200 mA
25
η
60
IRL
20
58
Gps
15
56
10
54
5
800
820
840
860
880
900
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
30
52
920
f, FREQUENCY (MHz)
200
20
150
15
100
Ciss
10
50
Coss
5
C rss , CAPACITANCE (pF)
Figure 3. Performance in Narrowband Circuit
C oss , C iss , CAPACITANCE (pF)
Freescale Semiconductor, Inc...
Pout, OUTPUT POWER (WATTS) CW
Crss
0
0
10
20
30
40
50
0
60
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1
4
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Zo = 2 Ω
Zload
Zsource
f = 875 MHz
f = 875 MHz
f = 845 MHz
f = 845 MHz
VDD = 32 V, IDQ = 200 mA, Pout = 75 W CW
f
MHz
Zsource
Ω
Zload
Ω
845
0.58 - j0.29
1.60 + j0.07
860
0.56 - j0.11
1.65 + j0.22
875
0.56 + j0.06
1.79 + j0.38
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 5. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF373ALR1 MRF373ALSR1
5
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF373ALR1 MRF373ALSR1
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
Q
aaa
2X
G
B
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
3
B
(FLANGE)
D
bbb M T A
K
2X
2X
M
B
R
M
(LID)
ccc
N
ccc
(LID)
Freescale Semiconductor, Inc...
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
2
T A
M
M
B
M
T A
M
B
M
F
H
M
C
E
S
(INSULATOR)
T
M
bbb
(INSULATOR)
A
aaa
SEATING
PLANE
M
T A
M
B
M
T A
M
B
M
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
CASE 360B - 05
ISSUE F
NI - 360
MRF373ALR1
A
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
A
A
(FLANGE)
B
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
B
(FLANGE)
2X
D
bbb
M
T A
M
2X
K
B
M
R
(LID)
ccc
M
T A
M
N
(LID)
ccc
M
B
M
F
H
T A
M
B
M
E
C
S
(INSULATOR)
PIN 3
T
M
(INSULATOR)
bbb
M
T A
M
B
SEATING
PLANE
M
MOTOROLA RF DEVICE DATA
aaa
M
T A
M
B
M
CASE 360C - 05
ISSUE D
NI - 360S
MRF373ALSR1
For More Information On This Product,
Go to: www.freescale.com
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.375
0.385
0.225
0.235
0.105
0.155
0.210
0.220
0.035
0.045
0.004
0.006
0.057
0.067
0.085
0.115
0.355
0.365
0.357
0.363
0.227
0.23
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
9.53
9.78
5.72
5.97
2.67
3.94
5.33
5.59
0.89
1.14
0.10
0.15
1.45
1.70
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF373ALR1 MRF373ALSR1
7
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
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“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
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E Motorola Inc. 2003
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HOME PAGE: http://motorola.com/semiconductors
MRF373ALR1 MRF373ALSR1
8
◊
MRF373A/D
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com