2SK3873-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR Equivalent circuit schematic Ratings 280 280 56 ±224 ±30 56 1039.1 41 Unit V V A A V A mJ mJ Remarks VGS=-30V Gate(G) Note *1 Note *2 Source(S) Note *1:Tch< = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=23A,L=3.37mH, Note *3 VCC=48V,RG=50Ω dV DS /dt dV/dt PD Tch Tstg 20 5 410 2.50 +150 -55 to +150 kV/µs VDS= <280V kV/µs Note *4 Tc=25°C W Ta=25°C °C °C Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. < < Note *4:IF< =-ID, -di/dt=50A/µs,VCC= BVDSS, Tch= 150°C Electrical characteristics (Tc =25°C unless otherwise specified) Turn-Off Time toff Drain(D) Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=280V VGS=0V VDS=224V VGS=0V VGS=±30V VDS=0V ID=28A VGS=10V Typ. 280 3.0 5.0 25 250 100 61 Tch=25°C Tch=125°C ID=28A VDS=25V VDS =75V VGS=0V f=1MHz VCC=180V ID=28A VGS=10V 12 RGS=10 Ω VCC=140V ID=56A VGS=10V IF=56A VGS=0V Tch=25°C IF=56A VGS=0V -di/dt=100A/µs Tch=25°C Max. 51 24 3600 5400 530 795 35 52.5 40 60 58 87 80 120 10 15 80 120 30 45 25 38 1.20 1.50 400 4.5 Units V V µA nA mΩ S pF ns nC V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.305 50.0 Units °C/W °C/W 1 2SK3873-01 FUJI POWER MOSFET Characteristics 100 450 90 400 80 350 70 300 60 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25 °C 20V 10V 8V ID [A] PD [W] 500 Allowable Power Dissipation PD=f(Tc) 250 7V 50 200 40 150 30 100 20 50 10 6.5V VGS=6.0V 0 0 0 25 50 75 100 125 0 150 1 2 3 4 100 5 6 7 8 9 10 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 0.14 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 0.13 VGS=6V 6.5V 100 ID [A] 0.200 7V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=28A,VGS=10V 0.175 0.12 0.11 0.150 0.09 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.10 0.08 0.07 8V 10V 20V 0.06 0.125 0.100 max. 0.075 0.05 typ. 0.04 0.050 0.03 0.02 0.025 0.01 0.000 0.00 0 10 20 30 40 50 ID [A] 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3873-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=56A,Tch=25 °C 6.5 12 6.0 5.5 Vcc= 56V max. 10 140V 4.5 224V 4.0 3.5 min. 3.0 8 VGS [V] VGS(th) [V] 5.0 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 Tch [°C] 10 4 70 80 90 100 110 120 130 140 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Ciss 10 3 10 10 IF [A] C [pF] Coss 2 Crss 1 10 1 10 0 10 -1 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 0.75 VDS [V] 10 4 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω 1200 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=56A 1100 IAS=23A 1000 10 3 900 800 IAS=34A 10 EAV [mJ] t [ns] tr td(off) 2 td(on) 700 600 500 IAS=56A 400 tf 10 1 300 200 100 10 0 10 0 -1 10 0 10 1 ID [A] 10 2 10 3 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3873-01 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=48V 2 10 Avalanche Current I AV [A] FUJI POWER MOSFET Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 10 -2 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4